逐次逼近寄存器模数转换器(SAR ADC)在逐次逼近的过程中,电容的切换会使参考电压上出现参考纹波噪声,该噪声会影响比较器的判定,进而输出错误的比较结果。针对该问题,基于CMOS 0.5μm工艺,设计了一种具有纹波消除技术的10 bit SAR ADC...逐次逼近寄存器模数转换器(SAR ADC)在逐次逼近的过程中,电容的切换会使参考电压上出现参考纹波噪声,该噪声会影响比较器的判定,进而输出错误的比较结果。针对该问题,基于CMOS 0.5μm工艺,设计了一种具有纹波消除技术的10 bit SAR ADC。通过增加纹波至比较器输入端的额外路径,将参考纹波满摆幅输入至比较器中;同时设计了消除数模转换器(DAC)模块,对参考纹波进行采样和输入,通过反转纹波噪声的极性,消除参考纹波对ADC输出的影响。该设计将信噪比(SNR)提高到56.75 dB,将有效位数(ENOB)提升到9.14 bit,将积分非线性(INL)从-1~5 LSB降低到-0.2~0.3 LSB,将微分非线性(DNL)从-3~4 LSB降低到-0.5~0.5 LSB。展开更多
Radial drilling technology,of which the jet bit is the key device,is a research focus in the field of oil drilling and production.This paper establishes mechanical equations for jet bits and analyzes the hydroseal of ...Radial drilling technology,of which the jet bit is the key device,is a research focus in the field of oil drilling and production.This paper establishes mechanical equations for jet bits and analyzes the hydroseal of backward jets in bottom holes.Meanwhile this paper establishes a mechanical equation for a high pressure hose and analyzes the axial force distribution.Laboratory experiments indicate that the flow rate,the angle between the backward nozzle axis and the jet bit axis,and the hole diameter are the major influencing factors;the generation of the pulling force is mainly due to the inlet pressure of the jet bit;the backward jets can significantly increase not only the pulling force but also the stability of jet bits.The pulling force would reach 8,376 N under experimental conditions,which can steadily pull the high-pressure hose forward.展开更多
Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) ...Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9% 84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ～ 41 MeV/(mg/cm 2 ), which can be partially explained by the fact that the MBU rate for tilted ions of 30 is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of ～ 9.5 MeV/(mg/cm 2 ), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices.展开更多
基金supported by High-tech Research and Development Program of China (No. 2007AA09Z315)Doctoral Foundation of Ministry of Education of China (No. 20070425006)
文摘Radial drilling technology,of which the jet bit is the key device,is a research focus in the field of oil drilling and production.This paper establishes mechanical equations for jet bits and analyzes the hydroseal of backward jets in bottom holes.Meanwhile this paper establishes a mechanical equation for a high pressure hose and analyzes the axial force distribution.Laboratory experiments indicate that the flow rate,the angle between the backward nozzle axis and the jet bit axis,and the hole diameter are the major influencing factors;the generation of the pulling force is mainly due to the inlet pressure of the jet bit;the backward jets can significantly increase not only the pulling force but also the stability of jet bits.The pulling force would reach 8,376 N under experimental conditions,which can steadily pull the high-pressure hose forward.
基金supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062,and 11005134)
文摘Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9% 84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ～ 41 MeV/(mg/cm 2 ), which can be partially explained by the fact that the MBU rate for tilted ions of 30 is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of ～ 9.5 MeV/(mg/cm 2 ), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices.
