Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than...Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.展开更多
Black silicon, produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, is widely believed to be a potential material for efficient multi-intermedia...Black silicon, produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells. Taking chalcogen as an example, we analyse the loss of sunlight for silicon with two impurity bands and we find that loss of the sunlight can be minimized to 0.332 when Te^0（0.307 eV） and Te＋（0.411 eV） are doped into microstructured silicon. Finally, problems needed to be resolved in analysing the relationship between conversion efficiency of the ideal four-band silicon solar cell and the position of the introduced two intermediated bands in silicon according to detailed balance theory are pointed out with great emphasis.展开更多
A silicon（Si） surface with a nanosized porous structure was formed via simple wet chemical etching catalyzed by gold（Au） nanoparticles on p-type Cz-Si（100）.The average reflectivity from 300 to 1200 nm was less t...A silicon（Si） surface with a nanosized porous structure was formed via simple wet chemical etching catalyzed by gold（Au） nanoparticles on p-type Cz-Si（100）.The average reflectivity from 300 to 1200 nm was less than 1.5%.Black Si solar cells were then fabricated using a conventional production process.The results reflected the output characteristics of the cells fabricated using different etching depths and emitter dopant profiles.Heavier dopants and shallower etching depths should be adopted to optimize the black Si solar cell output characteristics. The efficiency at the optimized etching time and dopant profile was 12.17%.However,surface passivation and electrode contact due to the nanosized porous surface structure are still obstacles to obtaining high conversion efficiency for the black Si solar cells.展开更多
采用金属辅助化学腐蚀法制备了多晶黑硅,并研究了极低浓度NaOH溶液对扩孔后黑硅结构的圆化作用及其对多晶黑硅太阳电池性能的影响。用扫描电镜（Scanning electron microscope,SEM）和量子效率（Quantum efficiency,QE）测试仪对黑硅表...采用金属辅助化学腐蚀法制备了多晶黑硅,并研究了极低浓度NaOH溶液对扩孔后黑硅结构的圆化作用及其对多晶黑硅太阳电池性能的影响。用扫描电镜（Scanning electron microscope,SEM）和量子效率（Quantum efficiency,QE）测试仪对黑硅表面形貌及黑硅电池性能进行了表征。结果表明,利用极低浓度的NaOH圆化扩孔后黑硅的尖端及棱角可以减少表面复合的影响。处理后的黑硅表面孔洞均匀且平滑,黑硅太阳电池400~900nm可见光波段平均反射率为4.15%,批量生产的电池平均转换效率达到17.94%,比常规酸制绒工艺制备的电池平均转换效率提高了0.35%。展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61106060 and 61274059)the National High Technology Research and Development Program of China(Grant No.2012AA052401)
文摘Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.
基金Project supported by the Key Program of Natural Science Foundation of Guangdong Province of China (Grant Nos.10251063101000001 and 8251063101000006)the National Natural Science Foundation of China (Grant No.60878063)
文摘Black silicon, produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells. Taking chalcogen as an example, we analyse the loss of sunlight for silicon with two impurity bands and we find that loss of the sunlight can be minimized to 0.332 when Te^0（0.307 eV） and Te＋（0.411 eV） are doped into microstructured silicon. Finally, problems needed to be resolved in analysing the relationship between conversion efficiency of the ideal four-band silicon solar cell and the position of the introduced two intermediated bands in silicon according to detailed balance theory are pointed out with great emphasis.
基金supported by the Knowledge Innovation Program of the Chinese Academy of Sciences(No.KGCX2-YW-382)the National Program on Key Basic Research Project of China(No.2010CB933804)
文摘A silicon（Si） surface with a nanosized porous structure was formed via simple wet chemical etching catalyzed by gold（Au） nanoparticles on p-type Cz-Si（100）.The average reflectivity from 300 to 1200 nm was less than 1.5%.Black Si solar cells were then fabricated using a conventional production process.The results reflected the output characteristics of the cells fabricated using different etching depths and emitter dopant profiles.Heavier dopants and shallower etching depths should be adopted to optimize the black Si solar cell output characteristics. The efficiency at the optimized etching time and dopant profile was 12.17%.However,surface passivation and electrode contact due to the nanosized porous surface structure are still obstacles to obtaining high conversion efficiency for the black Si solar cells.
文摘采用金属辅助化学腐蚀法制备了多晶黑硅,并研究了极低浓度NaOH溶液对扩孔后黑硅结构的圆化作用及其对多晶黑硅太阳电池性能的影响。用扫描电镜（Scanning electron microscope,SEM）和量子效率（Quantum efficiency,QE）测试仪对黑硅表面形貌及黑硅电池性能进行了表征。结果表明,利用极低浓度的NaOH圆化扩孔后黑硅的尖端及棱角可以减少表面复合的影响。处理后的黑硅表面孔洞均匀且平滑,黑硅太阳电池400~900nm可见光波段平均反射率为4.15%,批量生产的电池平均转换效率达到17.94%,比常规酸制绒工艺制备的电池平均转换效率提高了0.35%。
