Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically,...Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.展开更多
The properties of top-contact organic thin-film transistors （TC-OTFTs） using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline （BCP） as a hole-blocking interlayer have been improved significantly and a ...The properties of top-contact organic thin-film transistors （TC-OTFTs） using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline （BCP） as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers arc limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS = --20 V showed excellent hole mobility μFE and threshold voltage VTH of 0.58 cm^2/（V-s） and -4.6 V, respectively.展开更多
基于声学黑洞(acoustic black hole, ABH)弧形梁体积小且模态频率丰富的特点,将声学黑洞弧形梁作为附加结构周期分布在直梁上,达到促进局域共振效应和拓宽低频带隙的作用,由此构建一种新的局域共振型声学超材料。针对局域共振型超材料,...基于声学黑洞(acoustic black hole, ABH)弧形梁体积小且模态频率丰富的特点,将声学黑洞弧形梁作为附加结构周期分布在直梁上,达到促进局域共振效应和拓宽低频带隙的作用,由此构建一种新的局域共振型声学超材料。针对局域共振型超材料,采用高斯展开法,建立其半解析理论分析模型,基于零空间法处理其内部连接以及周期边界条件,并通过有限元法验证半解析理论分析模型的准确性。分析和计算其能带结构,研究结构参数以及ABH效应对布拉格带隙以及局域共振带隙的影响机理。研究结果表明,该半解析理论模型能够对结构的带隙进行有效计算,附加弧形ABH的陷波机制能够促进结构的局域共振效应并对主梁进行有效减振,为声学黑洞声学超材料的应用提供了新的思路。展开更多
The identification of objects in binary images is a fundamental task in image analysis and pattern recognition tasks. The Euler number of a binary image is an important topological measure which is used as a feature i...The identification of objects in binary images is a fundamental task in image analysis and pattern recognition tasks. The Euler number of a binary image is an important topological measure which is used as a feature in image analysis. In this paper, a very fast algorithm for the detection and localization of the objects and the computation of the Euler number of a binary image is proposed. The proposed algorithm operates in one scan of the image and is based on the Image Block Representation (IBR) scheme. The proposed algorithm is more efficient than conventional pixel based algorithms in terms of execution speed and representation of the extracted information.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61176043)the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong Province,China(Grant Nos.2010A081002005,2011A081301003,and 2012A080304016)the Youth Foundation of South China Normal University(Grant No.2012KJ018)
文摘Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.
基金supported by the National High Technology Research and Development Program of China (Grant No 2006AA03Z0412)the National Natural Science Foundation of China (Grant Nos 10774013 and 10804006)+4 种基金the Excellent Doctor’s Science and Technology Innovation Foundation of Beijing Jiaotong University (Grant No 48024)the Foundation of Beijing Jiaotong University (Grant No 2005SM057)the Research Fund for the Youth Scholars of the Doctoral Program of Higher Education (Grant No 20070004031)the Beijing NOVA program (Grant No 2007A024)Sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry
文摘The properties of top-contact organic thin-film transistors （TC-OTFTs） using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline （BCP） as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers arc limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS = --20 V showed excellent hole mobility μFE and threshold voltage VTH of 0.58 cm^2/（V-s） and -4.6 V, respectively.
文摘基于声学黑洞(acoustic black hole, ABH)弧形梁体积小且模态频率丰富的特点,将声学黑洞弧形梁作为附加结构周期分布在直梁上,达到促进局域共振效应和拓宽低频带隙的作用,由此构建一种新的局域共振型声学超材料。针对局域共振型超材料,采用高斯展开法,建立其半解析理论分析模型,基于零空间法处理其内部连接以及周期边界条件,并通过有限元法验证半解析理论分析模型的准确性。分析和计算其能带结构,研究结构参数以及ABH效应对布拉格带隙以及局域共振带隙的影响机理。研究结果表明,该半解析理论模型能够对结构的带隙进行有效计算,附加弧形ABH的陷波机制能够促进结构的局域共振效应并对主梁进行有效减振,为声学黑洞声学超材料的应用提供了新的思路。
基金Key Discipline of Materials Science and Engineering,Bureau of Education of Guangzhou (No. 202255464)“2+5” Significant Academic Hubs and Platforms of Guangzhou University (PT252022016)。
文摘The identification of objects in binary images is a fundamental task in image analysis and pattern recognition tasks. The Euler number of a binary image is an important topological measure which is used as a feature in image analysis. In this paper, a very fast algorithm for the detection and localization of the objects and the computation of the Euler number of a binary image is proposed. The proposed algorithm operates in one scan of the image and is based on the Image Block Representation (IBR) scheme. The proposed algorithm is more efficient than conventional pixel based algorithms in terms of execution speed and representation of the extracted information.
