The objective of this work is to simulate a single quantum well ultraviolet light emitting diode(LED) based on AlGaN/GaN/AlGaN and AlGaN/BGaN/AlGaN, by using TCAD Silvaco simulator. The first structure has a GaN quant...The objective of this work is to simulate a single quantum well ultraviolet light emitting diode(LED) based on AlGaN/GaN/AlGaN and AlGaN/BGaN/AlGaN, by using TCAD Silvaco simulator. The first structure has a GaN quantum well taken between two layers, of n-AlGaN and p-AlGaN. The second one has a BGaN quantum well instead of GaN. We fix the concentration of the boron in BGaN to only 1% and we vary the thickness of GaN and BGaN quantum well layer from 7 to 20 nm, for the two structures. As results, we obtain respectively for GaN-LED and BGaN-LED, a maximum current of 0.52 and 0.27 mA, a maximum power spectral density of 1.935 and 6.7 W cm^(-1) eV^(-1), a maximum spontaneous emission of 3.34 × 10^(28) and 3.43 × 10^(28) s^(-1) cm^(-3) eV^(-1), and a maximum Light output power of 0.56 and 0.89 mW.展开更多
基金supported by the University of Abou-Bekr-Belkaid, Materials and Renewable Energy Research Unit, Tlemcen, Algeria
文摘The objective of this work is to simulate a single quantum well ultraviolet light emitting diode(LED) based on AlGaN/GaN/AlGaN and AlGaN/BGaN/AlGaN, by using TCAD Silvaco simulator. The first structure has a GaN quantum well taken between two layers, of n-AlGaN and p-AlGaN. The second one has a BGaN quantum well instead of GaN. We fix the concentration of the boron in BGaN to only 1% and we vary the thickness of GaN and BGaN quantum well layer from 7 to 20 nm, for the two structures. As results, we obtain respectively for GaN-LED and BGaN-LED, a maximum current of 0.52 and 0.27 mA, a maximum power spectral density of 1.935 and 6.7 W cm^(-1) eV^(-1), a maximum spontaneous emission of 3.34 × 10^(28) and 3.43 × 10^(28) s^(-1) cm^(-3) eV^(-1), and a maximum Light output power of 0.56 and 0.89 mW.
