Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films

Highly conductive boron-doped hydrogenated mieroerystalline silicon （μc-Si：H） films are prepared by very high frequency plasma enhanced chemical vapour deposition （VHF PECVD） at the substrate temperatures （Ts） ranging from 90℃ to 270℃. The effects of Ts on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical （dark conductivity, carrier concentration and Hall mobility） and structural （crystallinity and grain size） properties are all strongly dependent on Ts. As Ts increases, it is observed that 1） the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at Ts=210℃, 2） the crystalline volume fraction （Xc） and the grain size increase initially, then reach their maximum values at TS=140℃, and finally decrease, 3） the dark conductivity （σd）, carrier concentration and Hall mobility have a similar dependence on Ts and arrive at their maximum values at Ts-190℃. In addition, it is also observed that at a lower substrate temperature Ts, a higher dopant concentration is required in order to obtain a maximum σd.

Effects of deposition pressure and plasma power on the growth and properties of boron-doped microcrystalline silicon films

Using diborane as doping gas, p-doped μc-Si：H layers are deposited by using the plasma enhanced chemical vapour deposition （PECVD） technology. The effects of deposition pressure and plasma power on the growth and the properties of μc-Si：H layers are investigated. The results show that the deposition rate, the electrical and the structural properties are all strongly dependent on deposition pressure and plasma power. Boron-doped μc-Si：H films with a dark conductivity as high as 1.42 Ω^-1·cm^-1 and a crystallinity of above 50% are obtained. With this p-layer, μc-Si：H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped μc-Si：H layers is discussed.

ZnO Films Synthesized by Solid-Source Chemical Vapor Deposition with c-Axis Parallel to Substrate

ZnO films with c -axis parallel to the substrate are reported.ZnO films are synthesized by solid-source chemical vapor deposition,a novel CVD technique,using zinc acetate dihydrate (solid) as the source material.The properties are characterized by X-ray diffraction,atomic force microscopy and transmission spectra.The parallel oriented ZnO films with mixed orientation for (100) and (110) planes are achieved on glass at the substrate temperature of 200℃ and the source temperature of 280℃,and a qualitative explanation is given for the forming of the mixed orientation.AFM images show that the surface is somewhat rough for the parallel oriented ZnO films.The transmission spectrum exhibits a high transmittance of about 85% in the visible region and shows an optical band gap about 3.25eV at room temperature.

A Novel Approach to Synthesizing Porous ZnO Films: Inorganic Chelating Sol-Gel Method

Porous ZnO films are synthesized by inorganic chelating sol-gel method,which is a novel sol-gel technique using zinc nitrate as starting materials and citric acid as the chelating reagent.The crystal structure,surface morphology,porous and optical properties of the deposited films are investigated.X-ray diffraction pattern analysis shows that crystal structure of the ZnO films is hexagonal wurtzite.Scanning electron microscopy (SEM) shows that the ZnO film is porous.The curve of pore size distribution has two peak values at about 2.02nm and 4.97nm and BET surface area of the ZnO film is 27.57m2/g.In addition,the transmittance spectrum gives a high transmittance of 85% in the visible region and optical bandgap of the ZnO film (fired at 500℃) is 3.25eV.

Growth and Optical Properties of ZnO Films and Quantum Wells

The growth characteristics during metalorganic chemical vapor deposition and optical properties of ZnO films on sapphire （Al2O3） （0001） and （1120） substrates are studied. For the former,the effects of two important growth parameters,i, e. temperature and pressure, are investigated in detail. Due to the large lattice mismatch between the film and the substrate, ZnO nanocrystals are usually obtained. The growth behavior at the film-substrate interface is found to be strongly dependent on the growth temperature,while the growth pressure determines the shape of the nanostructures as they grow. It is difficult to obtain ZnO films that have good quality and a smooth surface simultaneously. Due to the smaller lattice mismatch,the critical thickness of ZnO on the Al2O3 （1120） surface is found to be much larger than that on the Al2O3 （0001） surface. ZnO/MgZnO quantum wells with graded well thicknesses are grown on the Al2O3 （1120） surfaces,and their optical properties are studied. The built-in electric field in the well layer, generated by the piezoelectric effect, is estimated to be 3 × 10^5 V/cm. It is found that growth at low temperatures and low pressures may facilitate the incorporation of acceptor impurities in ZnO.

Effect of sputtering conditions on growth and properties of ZnO :Al films

Al-doped zinc oxide（AZO） films were deposited on glass substrates by mid-frequency magnetron sputtering. The effects of substrate rotation speed and target-substrate distance on the electrical, optical properties and microstructure and crystal structures of the resulting films were investigated by scanning electron microscopy（SEM）, atomic force microscopy（AFM）, X-ray diffraction（XRD）, spectrophotometer and Hall-effect measurement system, respectively. XRD results show that all AZO films exhibit a strong preferred c-axis orientation. However, the crystallinity of films decreases with the increase of substrate rotation speed, accompanying with the unbalanced grains grows. For the films prepared at different target-substrate distances, the uniform microstructure and morphology are observed. The highest carrier concentration of 5.9×1020 cm-3 and Hall mobility of 13.1 cm^2/（V·s） are obtained at substrate rotation speed of 0 and target-substrate distance of 7 cm. The results indicate that the structure and performances of the AZO films are strongly affected by substrate rotation speed.

基于共溅射ZnO/SnO_(2)异质结薄膜的气体传感器研究

采用射频磁控共溅射法在叉指电极上制备了ZnO/SnO_(2)n-n异质结复合薄膜,系统测试了其气敏特性,并分析了其气敏机理。结果表明,与ZnO薄膜和SnO_(2)薄膜气体传感器相比,ZnO/SnO_(2)异质结薄膜气体传感器具有更低的工作温度、更高的灵敏度以及更快的响应和恢复速度。ZnO/SnO_(2)异质结薄膜气体传感器对乙醇具有较好的选择性,最低检测体积分数为1×10^(-6),最佳工作温度为250℃;对1×10^(-4)乙醇气体的灵敏度可达18.4,响应时间和恢复时间分别为10 s和19 s。

双层结构对ZnO TFT稳定性的影响

室温下采用射频磁控溅射方法在SiO_(2)/Si衬底上沉积了单层ZnO薄膜和高氧/低氧双层ZnO薄膜,采用电子束蒸发设备蒸镀Al电极,制备单沟道ZnO TFTs和双层沟道ZnO TFTs。比较两种结构ZnO TFTs的各种性能参数,分析双层结构对TFTs产生的影响。实验结果表明,底部高含氧量ZnO层和顶部低含氧量ZnO层构成了DAL同质结且高氧/低氧薄膜存在载流子浓度产差,利用载流子从高浓度向低浓度扩散的性质,可以填补栅介电层和沟道层之间的界面态缺陷,使器件界面类受主陷阱减少,有效降低TFTs的滞回现象。与单有源层TFTs相比,双沟道层TFTs还具有电学调制作用,其电学性能和稳定性均有明显的提高,得到最佳TFTs的开/关电流比达到3.44×10^(9),亚阈值摆幅为0.68 V/dec,阈值电压偏移为1.2 V。

Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Different Pyrolysis Temperatures

Boron-doped zinc oxide transparent （BZO） films were prepared by sol-gel method. The effect of pyrolysis temperature on the crystallization behavior and properties was systematically investigated. XRD patterns revealed that the BZO films had wurtzite structure with a preferential growth orientation along the c-axis. With the increase of pyrolysis temperature, the particle size and surface roughness of the BZO films increased, suggesting that pyrolysis temperature is the critical factor for determining the crystallization behavior of the BZO films. Moreover, the carrier concentration and the carrier mobility increased with increasing the pyrolysis temperature, and the mean transmittance for every film is over 90% in the visible range.

First-principles study and electronic structures of Mn-doped ultrathin ZnO nanofilms

The first-principles density functional calculation is used to investigate the electronic structures and magnetic properties of Mn-doped and N-co-doped ZnO nanofilms.The band structure calculation shows that the band gaps of ZnO films with 2,4,and 6 layers are larger than the band gap of the bulk with wurtzite structure and decrease with the increase of film thickness.However,the four-layer ZnO nanofilms exhibit ferromagnetic phases for Mn concentrations less than 24% and 12% for Mn-doping performed in the whole layers and two layers of the film respectively,while they exhibit spin glass phases for higher Mn concentrations.It is also found,on the one hand,that the spin glass phase turns into the ferromagnetic one,with the substitution of nitrogen atoms for oxygen atoms,for nitrogen concentrations higher than 16% and 5% for Mn-doping performed in the whole layers and two layers of the film respectively.On the other hand,the spin-glass state is more stable for ZnO bulk containing 5% of Mn impurities,while the ferromagnetic phase is stable by introducing the p-type carriers into the bulk system.Moreover,it is shown that using the effective field theory for ferromagnetic system,the Curie temperature is close to the room temperature for the undamped Ruderman-Kittel-Kasuya-Yoshida（RKKY） interaction.

Spontaneous Cracking of Graphite Oxide Sheet on Oxygen Deficient ZnO Film

Graphite oxide （GO） is an important material of wide applications. Owing to its good mechanical property, the GO sheet is always expected to be stable and remains flat on various substrates. Here we demonstrate for the first time an unexpected behavior of the GO sheet on oxygen deficient ZnO film, namely the spontaneous cracking of the entire GO sheet into many small pieces. This unusual behavior has been carefully investigated by a series of control experiments and SEM, XPS and PL measurements. It is anticipated that the oxygen vacancies in the oxygen deficient ZnO film can annihilate epoxy groups of the GO sheet, resulting in the unzipping of the aligned epoxy groups on GO sheet. A prototype of the white light detector made from the cracked GO sheet is fabricated and the device demonstrates high stability and good reproducibility.

Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition

ZnO thin films were grown on GaAs （001） substrates by metal-organic chemical vapor deposition （MOCVD） at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precursor, respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement （XRD） results indicated that all the thin films were grown with highly c- axis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy （SEM） image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge （3. 33eV） emissions with little or no deep-level e- mission related to defects.

Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

This paper reports that ion implantation to a dose of 1 ×10^17 ions/cm^2 was performed on c-axis-orientated ZnO thin films deposited on （0001） sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600 - 900 ℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction （XRD）, photoluminescence （PL）. It was found that the intensities of （002） peak and near band edge （NBE） exitonic ultraviolet emission increased with increasing annealing temperature from 600- 900 ℃. The defect related deep level emission （DLE） firstly increased with increasing annealing temperature from 600 - 750 ℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at ～850℃ and ～750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900 ℃.

Electrochemical oxidation of reactive brilliant orange X-GN dye on boron-doped diamond anode

In this study,the electrochemical oxidation of reactive brilliant orange X-GN dye with a boron-doped diamond(BDD)anode was investigated.The BDD electrodes were deposited on the niobium(Nb)substrates by the hot filament chemical vapor deposition method.The effects of processing parameters,such as film thickness,current density,supporting electrolyte concentration,initial solution pH,solution temperature,and initial dye concentration,were evaluated following the variation in the degradation efficiency.The microstructure and the electrochemical property of BDD were characterized by scanning electron microscopy,Raman spectroscopy,and electrochemical workstation;and the degradation of X-GN was estimated using UV-Vis spectrophotometry.Further,the results indicated that the film thickness of BDD had a significant impact on the electrolysis of X-GN.After 3 h of treatment,100%color and 63.2%total organic carbon removal was achieved under optimized experimental conditions:current density of 100 mA/cm2,supporting electrolyte concentration of 0.05 mol/L,initial solution pH 3.08,and solution temperature of 60°C.

Fabrication of ZnO films by radio frequency magnetron sputtering and annealing

ZnO thin films were deposited on Si（111） substrates through a radio frequency （rf） magnetron sputtering system. Then the samples were annealed at different temperatures in air ambience and ammonia ambience respectively. The structure and composition of the ZnO films were studied by X-ray diffraction （XRD） and X-ray photoelectron spectroscopy （XPS）. The morphology of the samples was studied by scanning electron microscopy （SEM）. Measured results show that ZnO films with hexagonal wurtzite structure were grown on Si（111） substrates when annealed in the two ambiences. The volatilization process of ZnO in the ammonia ambience at high temperature was discussed and the mechanism of the reaction was analyzed.

Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets

To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.

Effect of annealing temperature on the microstructure and optoelectrical properties of ZnO thin films and their application in self-powered accelerometers

This paper reports a piezoelectric nanogenerator(NG) with a thickness of approximately 80 μm for miniaturized self-powered acceleration sensors. To deposit the piezoelectric zinc oxide(ZnO) thin film, a magnetron sputtering machine was used. Polymethyl methacrylate(PMMA) and aluminum-doped zinc oxide(AZO) were used as the insulating layer and the top electrode of the NG, respectively. The experimental results show that the ZnO thin films annealed at 150℃ exhibited the highest crystallinity among the prepared films and an optical band gap of 3.24 eV. The NG fabricated with an AZO/PMMA/ZnO/stainless steel configuration exhibited a higher output voltage than the device with an AZO/ZnO/PMMA/stainless steel configuration. In addition, the annealing temperature affected the open-circuit voltage of the NGs;the output voltage reached 3.81 V when the annealing temperature was 150℃. The open-circuit voltage of the prepared self-powered accelerometer increased linearly with acceleration. In addition, the small NG-based accelerometer, which exhibited excellent fatigue resistance, can be used for acceleration measurements of small and lightweight devices.

Propagations of Rayleigh and Love waves in ZnO films/glass substrates analyzed by three-dimensional finite element method

Propagation characteristics of surface acoustic waves（SAWs） in ZnO films/glass substrates are theoretically investigated by the three-dimensional（3D） finite element method. At first, for（11ˉ20） ZnO films/glass substrates, the simulation results confirm that the Rayleigh waves along the [0001] direction and Love waves along the [1ˉ100] direction are successfully excited in the multilayered structures. Next, the crystal orientations of the ZnO films are rotated, and the influences of ZnO films with different crystal orientations on SAW characterizations, including the phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency, are investigated. The results show that at appropriate h/λ, Rayleigh wave has a maximum k^2 of 2.4% in（90°, 56.5°, 0°） ZnO film/glass substrate structure; Love wave has a maximum k^2 of 3.81% in（56°, 90°, 0°） ZnO film/glass substrate structure. Meantime, for Rayleigh wave and Love wave devices, zero temperature coefficient of frequency（TCF） can be achieved at appropriate ratio of film thickness to SAW wavelength. These results show that SAW devices with higher k^2 or lower TCF can be fabricated by flexibly selecting the crystal orientations of ZnO films on glass substrates.

Induced growth of high quality ZnO thin films by crystallized amorphous ZnO

This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as seeds （buffer layer）, ZnO thin films have been grown in diethyene glycol solution of zinc acetate at 80 ℃. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the ZnO. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the ZnO thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality ZnO thin film was obtained.

Preparation and optical characteristics of ZnO films by chelating sol-gel method

The effect of different annealing temperatures on the structure, morphology,and optical properties of ZnO thin films prepared by the chelating sol-gel method was investigated.Zinc-oxide thin films were coated on quartz glass substrates by dip coating. Zinc nitrate, absoluteethanol, and citric acid were used as precursor, solvent, and chelating agent, respectively. Theresults show that ZnO films derived from zinc-citrate have lower crystallization temperature (below400℃), and that the crystal structure is wurtzite. The films, treated over 500℃, consist ofnano-particles and show to be porous at 600℃. The particle size of the film increases with theincrease of the annealing temperature. The largest particle size is 60 nm at 600℃. The opticaltransmittances related to the annealing temperatures become 90% higher in the visible range. Thefilm shows a starting absorption at 380 nm, and the optical band-gap of the thin film (fired at500℃) is 3.25 eV and close to the intrinsic band-gap of ZnO (3.2 eV).