According to the theory of DBR, with the P-type DBR as an example, the electrical characteristics and optical reflection of the DBR are analyzed by studying the energy band structure with various graded region widths ...According to the theory of DBR, with the P-type DBR as an example, the electrical characteristics and optical reflection of the DBR are analyzed by studying the energy band structure with various graded region widths and doping densities. The width and doping density of graded region are decided through a comparative study. The P-type DBR of 980 nm VCSELs is designed with Al0.9Ga0.1As and Al0.1Ga0.9As selected as the high and low refractive index material for the DBR. The 980 nm bottom VCSELs, which consists of 30 pairs P-type DBR and 28 pairs N-type DBR, are then fabricated. In P-type DBR, the width of graded region is 0.02 μm and the uniformity doping concentration is 2.5×10^18cm^-3. Its reflectivity is 99.9%. In N-type DBR, the width of graded region is also 0.02 μm and the uniformity doping concen- tration is 2×10^18cm^-3. Its reflectivity is 99.3%. The I-V curve shows that the series resistance of the device is about 0.05Ω. According to the theory of DBR, with the P-type DBR as an example, the electrical characteristics and optical reflection of the DBR are analyzed by studying the energy band structure with various graded region widths and doping densities. The width and doping density of graded region are decided through a comparative study. The P-type DBR of 980 nm VCSELs is designed, with Al0.9Ga0.1As and Al0.1Ga0.9As selected as the high and low refractive index material for the DBR. The 980 nm bottom VCSELs, which consist of 30 pairs P-type DBR and 28 pairs N-type DBR, are then fabricated. In P-type DBR, the width of graded region is 0.02μm and the uniformity doping concentration is 2.5×10^18cm^-3. Its reflectivity is 99.9%. In N-type DBR, the width of graded region is also 0.02 μm and the uniformity doping concentration is 2×10^18cm^-3. Its refiectivity is 99.3%. The I-V curve shows that the series resistance of the device is about 0.05Ω.展开更多
Bottom-emitting organic light-emitting diodes （BOLEDs）, using AI/MoO3 as the semitransparent anode and LiF/Al as the reflective cathode and Alqa as the emitter, are fabricated. At the same time, the performance impr...Bottom-emitting organic light-emitting diodes （BOLEDs）, using AI/MoO3 as the semitransparent anode and LiF/Al as the reflective cathode and Alqa as the emitter, are fabricated. At the same time, the performance improvement of the BOLEDs having a capping layer inserted between the semitransparent anode and the glass substrate is studied. The optimized microcavity BOLED shows a current efficiency （5.49cd/A） enhancement of 10% compared with a conventional BOLED based on ITO （5.0cd/A）. Slight color variation is observed in 120° forward viewing angle with 5Onto BCP as the capping layer. Strong dependence of efficiency on A1 anode thickness and the thickness and refractor index of the capping layer is explained. The results indicate that the BOLEDs with the double-aluminum electrode have potential practical applications.展开更多
文摘为解决当前常用煤矿氧气检测仪器易受交叉气体干扰且功耗大的问题,基于GD32F303RCT6微控制器和ADN8834热电冷却控制器,设计了一种软启动开关电路控制的垂直腔面发射激光器(Vertical-cavity Surface-emitting Laser,VCSEL)高精度驱动及温控电路。驱动电路中,高频正弦波信号和低频锯齿波信号叠加的二进制数据由微控制器产生,经信号发生电路、电压电流转换电路转化成VCSEL高精度驱动电流信号;温控电路中,设计基于比例积分微分(Proportional Integral Differential,PID)补偿电路和数模转换控制器(Digital to Analog Converter,DAC)目标温度控制电路实现激光器温度自动调节。测试结果表明:驱动电路的电流输出区间为0.680~1.360 mA;锯齿波频率误差小于0.5%,正弦波频率误差小于0.1%;氧气吸收峰扫描精度高达0.07 pm,对应电流扫描精度为0.12μA;温控电路的温度控制精度为±0.012℃。满足了可调谐半导体激光吸收光谱(Tunable Diode Laser Absorption Spectroscopy,TDLAS)煤矿氧气检测应用需求。
基金Supported partially by the National Natural Science Foundation of China (Grant Nos. 60636020, 60676034, 60577003, 60706007)
文摘According to the theory of DBR, with the P-type DBR as an example, the electrical characteristics and optical reflection of the DBR are analyzed by studying the energy band structure with various graded region widths and doping densities. The width and doping density of graded region are decided through a comparative study. The P-type DBR of 980 nm VCSELs is designed with Al0.9Ga0.1As and Al0.1Ga0.9As selected as the high and low refractive index material for the DBR. The 980 nm bottom VCSELs, which consists of 30 pairs P-type DBR and 28 pairs N-type DBR, are then fabricated. In P-type DBR, the width of graded region is 0.02 μm and the uniformity doping concentration is 2.5×10^18cm^-3. Its reflectivity is 99.9%. In N-type DBR, the width of graded region is also 0.02 μm and the uniformity doping concen- tration is 2×10^18cm^-3. Its reflectivity is 99.3%. The I-V curve shows that the series resistance of the device is about 0.05Ω. According to the theory of DBR, with the P-type DBR as an example, the electrical characteristics and optical reflection of the DBR are analyzed by studying the energy band structure with various graded region widths and doping densities. The width and doping density of graded region are decided through a comparative study. The P-type DBR of 980 nm VCSELs is designed, with Al0.9Ga0.1As and Al0.1Ga0.9As selected as the high and low refractive index material for the DBR. The 980 nm bottom VCSELs, which consist of 30 pairs P-type DBR and 28 pairs N-type DBR, are then fabricated. In P-type DBR, the width of graded region is 0.02μm and the uniformity doping concentration is 2.5×10^18cm^-3. Its reflectivity is 99.9%. In N-type DBR, the width of graded region is also 0.02 μm and the uniformity doping concentration is 2×10^18cm^-3. Its refiectivity is 99.3%. The I-V curve shows that the series resistance of the device is about 0.05Ω.
基金Supported by the Nanjing University of Telecommunications and Posts under Grant Nos NY212010 and NY212034the National Natural Science Foundation of China under Grant Nos 91233117 and 51333007+2 种基金the Natural Science Fund in Jiangsu Province under Grant No BK2012834the National Basic Research Program of China under Grant No 2015CB932200the Priority Academic Program Development of Jiangsu Higher Education Institutions
文摘Bottom-emitting organic light-emitting diodes （BOLEDs）, using AI/MoO3 as the semitransparent anode and LiF/Al as the reflective cathode and Alqa as the emitter, are fabricated. At the same time, the performance improvement of the BOLEDs having a capping layer inserted between the semitransparent anode and the glass substrate is studied. The optimized microcavity BOLED shows a current efficiency （5.49cd/A） enhancement of 10% compared with a conventional BOLED based on ITO （5.0cd/A）. Slight color variation is observed in 120° forward viewing angle with 5Onto BCP as the capping layer. Strong dependence of efficiency on A1 anode thickness and the thickness and refractor index of the capping layer is explained. The results indicate that the BOLEDs with the double-aluminum electrode have potential practical applications.
