In the present work the research of grain boundary (CB) energy versus angle of misorientation in fcc metals Al, Cu, An and Ni was carried out. An axis of CB misorientation is a direction [100], angle of misorientatio...In the present work the research of grain boundary (CB) energy versus angle of misorientation in fcc metals Al, Cu, An and Ni was carried out. An axis of CB misorientation is a direction [100], angle of misorientation makes from 2皍p in 23*. The interatomic interaction was opproximated by Morse' s pair semi-empirical potential. Two variants of relaxation technique were used: (1) rigid relax- ation with the change of atom quantity per a GB (vacancy relaxation ) and (2) full atomic relaxation by a molecular static method. The obtained orientation dependence has a good agreement with experi- ment. There are cusps on a curve in the range of special GB angles.The comparison of obtained curves with calculated ones in model Van der Merwe was carried out. Dependencies obtained in our investiga- tions are not smooth and have an oscillatory character. The oscillations reflect a discrete structure of a lattice.展开更多
文摘In the present work the research of grain boundary (CB) energy versus angle of misorientation in fcc metals Al, Cu, An and Ni was carried out. An axis of CB misorientation is a direction [100], angle of misorientation makes from 2皍p in 23*. The interatomic interaction was opproximated by Morse' s pair semi-empirical potential. Two variants of relaxation technique were used: (1) rigid relax- ation with the change of atom quantity per a GB (vacancy relaxation ) and (2) full atomic relaxation by a molecular static method. The obtained orientation dependence has a good agreement with experi- ment. There are cusps on a curve in the range of special GB angles.The comparison of obtained curves with calculated ones in model Van der Merwe was carried out. Dependencies obtained in our investiga- tions are not smooth and have an oscillatory character. The oscillations reflect a discrete structure of a lattice.
