期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Effect of Sn-doping on the structural,electrical and magnetic properties of(In_(0.95-x)Sn_xFe_(0.05))_2O_3 films 被引量:2
1
作者 邢鹏飞 陈延学 孙少华 《Journal of Semiconductors》 EI CAS CSCD 2013年第2期15-18,共4页
Room-temperature ferromagnetism was observed in (In0.95-xSnxFe0.05)203 (x = 0-0.09) films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into ... Room-temperature ferromagnetism was observed in (In0.95-xSnxFe0.05)203 (x = 0-0.09) films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In2O3 lattice. The carrier concentration in the films is obviously increased by the Sn-doping, while the ferromagnetic properties are rarely changed. We think that in our Fe-doped In2O3 films, the oxygen vacancy-related bound magnetic polaron model, rather than the carrier-mediated RKKY coupling, is the main mechanism for the observed ferromagnetism. 展开更多
关键词 pulsed laser deposition room-temperature ferromagnetism (In0.95-xSnxFe0.05)2O3 films carrier concentration bound magnetic polaron model
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部