The progressive current degradation and breakdown behaviors of GaN-based light emitting diodes under high reversebias stress are studied by combining the electrical, optical, and surface morphology characterizations. ...The progressive current degradation and breakdown behaviors of GaN-based light emitting diodes under high reversebias stress are studied by combining the electrical, optical, and surface morphology characterizations. The current features a typical “soft breakdown” behavior, which is linearly correlated to an increase of the accumulative number of electroluminescence spots. The time-to-failure for each failure site approximately obeys a Weibull distribution with slopes of about 0.67 and 4.09 at the infant and wear-out periods, respectively. After breakdown, visible craters can be observed at the device surface as a result of transient electrostatic discharge. By performing focused ion beam cuts coupled with scan electron microscope, we observed a local current shunt path in the surface layer, caused by the rapid microstructure deterioration due to significant current heating effect, consistent well with the optical beam induced resistance change observations.展开更多
In this paper,subnanosecond-pulse and one-nanosecond-pulse generators are used to study the breakdowns in highly overvolted gaps in atmospheric pressure air.With different cathodes,we measured the applied voltage and ...In this paper,subnanosecond-pulse and one-nanosecond-pulse generators are used to study the breakdowns in highly overvolted gaps in atmospheric pressure air.With different cathodes,we measured the applied voltage and discharge current to investigate the dynamic characteristics in the subnanosecond breakdown during the generation of a supershort avalanche electron beam.Especially,characteristics of dynamic displacement current are presented in the current paper,which is detected between the ionization wave front and a plane anode.It is shown that during a subnanosecond voltage rise time,the amplitude of the dynamic displacement current can be higher than 4 kA.It is demonstrated that the breakdown in the air gap is assisted by ionization processes between the ionization wave front and a plane anode.展开更多
In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor （LBJT） with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the ...In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor （LBJT） with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm 3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT （VBJT） with comparable breakdown voltage （3357 V） shows that the minimum base width of 0.25 ~tm and base doping as high as 8 × 10^17 cm^-3 contribute to a maximum current gain of only 128.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61504050 and 11604124)the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK20140168 and BK20150158)the Fundamental Research Funds for the Central Universities,China(Grant Nos.JUSRP51628B and JUSRP51510)
文摘The progressive current degradation and breakdown behaviors of GaN-based light emitting diodes under high reversebias stress are studied by combining the electrical, optical, and surface morphology characterizations. The current features a typical “soft breakdown” behavior, which is linearly correlated to an increase of the accumulative number of electroluminescence spots. The time-to-failure for each failure site approximately obeys a Weibull distribution with slopes of about 0.67 and 4.09 at the infant and wear-out periods, respectively. After breakdown, visible craters can be observed at the device surface as a result of transient electrostatic discharge. By performing focused ion beam cuts coupled with scan electron microscope, we observed a local current shunt path in the surface layer, caused by the rapid microstructure deterioration due to significant current heating effect, consistent well with the optical beam induced resistance change observations.
基金Project supported by Russian Foundation for Basic Research （12-08-91150-FOEH_a and 12-08-00105-a）, National Natural Science Foundation of China （51222701, 51207154, 51211120183）, and the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists （2012T1G0021）.
文摘In this paper,subnanosecond-pulse and one-nanosecond-pulse generators are used to study the breakdowns in highly overvolted gaps in atmospheric pressure air.With different cathodes,we measured the applied voltage and discharge current to investigate the dynamic characteristics in the subnanosecond breakdown during the generation of a supershort avalanche electron beam.Especially,characteristics of dynamic displacement current are presented in the current paper,which is detected between the ionization wave front and a plane anode.It is shown that during a subnanosecond voltage rise time,the amplitude of the dynamic displacement current can be higher than 4 kA.It is demonstrated that the breakdown in the air gap is assisted by ionization processes between the ionization wave front and a plane anode.
基金supported by the Ministry of Education of China (Grant No. 20100101110056)the Natural Science Foundation for Distinguished Young Scholars of Zhejiang Province of China (Grant No. R1100468)
文摘In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor （LBJT） with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm 3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT （VBJT） with comparable breakdown voltage （3357 V） shows that the minimum base width of 0.25 ~tm and base doping as high as 8 × 10^17 cm^-3 contribute to a maximum current gain of only 128.
