A calculation model for breakdown time delay and jitter of gas switches under hundred-nanosecond pulses and its application in a self-triggered pre-ionized switch

In this paper, a calculation model for the breakdown time delay and jitter of gas switches under hundred-nanosecond pulses is proposed and applied in a self-triggered pre-ionized switch. The effects of injection time of pre-ionization, pulse rise time, and the pre-ionization jitter are discussed and verified through experiments. It indicates that the pre-ionization should be injected when the electric field is high enough in the gap, injection after 80% peak-time can ensure its effectiveness.Then the statistical time delay jitter will be determined by the pre-ionization jitter, which is an intrinsic restriction of the self-triggered switch. However, when the changing rate of the pulsed electric field exceeds a certain value, the breakdown time delay jitter can be partly offset in the formative stage because the formative time delay has an exponential relationship with the electric field. Therefore, lower time jitter can be obtained under pulses with a shorter pulse rise time. In general, the results of the calculation model agree with the experimental results, and the experimental parameters which lead to a low jitter can also be used as a reference.

Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

A multi-deposition multi-annealing technique （MDMA） is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device＇s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown （TDDB） characteristics of positive channel metal oxide semiconductor （PMOS） under different MDMA process conditions, including the depo- sition/annealing （D＆A） cycles, the D＆A time, and the total annealing time. The results show that the increases of the number of D＆A cycles （from 1 to 2） and D＆A time （from 15 s to 30 s） can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail （TTF） at 63.2% increases by about several times. However, too many D＆A cycles （such as 4 cycles） make the equivalent oxide thickness （EOT） increase by about 1A and the TTF of PMOS worsen. Moreover, different D＆A times and numbers of D＆A cycles induce different breakdown mechanisms.

The effect of polymer type on electric breakdown strength on a nanosecond time scale

Based on the concepts of fast polarization, effective electric field and electron impact ionization criterion, the effect of polymer type on electric breakdown strength （EBD） on a nanosecond time scale is investigated, and a formula that qualitatively characterizes the relation between the electric breakdown strength and the polymer type is derived. According to this formula, it is found that the electric breakdown strength decreases with an increase in the effective relative dielectric constants of the polymers. By calculating the effective relative dielectric constants for different types of polymers, the theoretical relation for the electric breakdown strengths of common polymers is predicted. To verify the prediction, the polymers of PE （polyethylene）, PTFE （polytetrafluoroethelene）, PMMA （organic glass） and Nylon are tested with a nanosecond-pulse generator. The experimental result shows EBD （PTFE） 〉 EBD （PMMA） 〉 EBD （Nylon） 〉 EBD （PE）. This result is consistent with the theoretical prediction.

Detection of K in soil using time-resolved laser-induced breakdown spectroscopy based on convolutional neural networks

One of the technical bottlenecks of traditional laser-induced breakdown spectroscopy(LIBS) is the difficulty in quantitative detection caused by the matrix effect. To troubleshoot this problem,this paper investigated a combination of time-resolved LIBS and convolutional neural networks(CNNs) to improve K determination in soil. The time-resolved LIBS contained the information of both wavelength and time dimension. The spectra of wavelength dimension showed the characteristic emission lines of elements, and those of time dimension presented the plasma decay trend. The one-dimensional data of LIBS intensity from the emission line at 766.49 nm were extracted and correlated with the K concentration, showing a poor correlation of R_c^2?=?0.0967, which is caused by the matrix effect of heterogeneous soil. For the wavelength dimension, the two-dimensional data of traditional integrated LIBS were extracted and analyzed by an artificial neural network(ANN), showing R_v^2?=?0.6318 and the root mean square error of validation(RMSEV)?=?0.6234. For the time dimension, the two-dimensional data of time-decay LIBS were extracted and analyzed by ANN, showing R_v^2?=?0.7366 and RMSEV?=?0.7855.These higher determination coefficients reveal that both the non-K emission lines of wavelength dimension and the spectral decay of time dimension could assist in quantitative detection of K.However, due to limited calibration samples, the two-dimensional models presented over-fitting.The three-dimensional data of time-resolved LIBS were analyzed by CNNs, which extracted and integrated the information of both the wavelength and time dimension, showing the R_v^2?=?0.9968 and RMSEV?=?0.0785. CNN analysis of time-resolved LIBS is capable of improving the determination of K in soil.

时间分辨动态LIBS测量方法

针对激光诱导击穿光谱(LIBS)研究对时间分辨动态光谱测量方法的需求,建立了基于多通道光纤束的动态LIBS测量方法。该方法首先利用不同长度的光纤组成多通道光纤束,对瞬态LIBS信号进行差异延迟,使按照特定时间序列发射的光谱信号同步到达探测器,而后采用面阵ICCD相机对同步到达的多通道光谱信号进行高时间分辨探测。该方法单次测量即可获得LIBS辐射不同时刻的时间分辨光谱。为了验证基于多通道光纤束的动态LIBS测量方法,研制了具有19个通道的光纤束,光纤束中包含的各个单根光纤长度呈等差数列排布,长度差设置为10 m,对应测量的时间间隔约为50 ns,单次测量记录的总时间长度近900 ns。分别基于短脉冲激光光源和标准光源,开展了系统时间响应和光谱响应特性研究,获得了系统的时间响应数据和光谱响应曲线。用YAG激光器的二倍频激光(532 nm)诱导Si产生等离子体辐射光谱,在线测量了辐射光谱的时间演化历程,获得了Si等离子体辐射过程中SiⅠ390.52 nm,SiⅡ385.51 nm,SiⅡ413.12 nm谱线从0~898 ns时间范围内19个时刻的光谱信息,获得了特征光谱的演化规律,验证了该测量方法的可行性。结果表明,利用该测量方法,单次测量可以获得瞬态LIBS辐射过程中19个时刻的光谱参数,具有很高的测量效率。对于实验成本较高、运行频率低的激光诱导等离子体实验研究,采用该方法可以大大降低了测量成本,有效提升等离子体时间分辨动态光谱测量能力。

预电离间隙击穿特性及其对中储开关击穿稳定性的影响

紫外预电离中储开关是大型强电磁脉冲模拟装置的关键器件,中储开关预电离间隙击穿特性是影响开关性能的一个重要因素。在N_(2)气压为0.1~0.7 MPa的工作环境中,开展了预电离间隙的击穿特性及其对中储开关击穿稳定性影响的实验研究。预电离间隙的击穿特性实验结果表明,随着气压的增加,预电离间隙击穿电压呈现出不同的变化趋势:间隙距离较短时,击穿发生在预电离间隙钨针和铜电极之间的气体介质中,击穿电压呈现出渐进饱和的趋势;间隙距离较长时,低气压下的击穿发生在预电离间隙中,高气压条件下击穿发生在预电离电极的陶瓷套管表面气体介质中,此时击穿电压几乎不随气压发生变化。在电磁脉冲模拟装置中开展了预电离间隙击穿特性对紫外预电离中储开关击穿特性影响的实验,结果表明,当中储开关内部气压很高时,开关击穿分散性大于低气压区域。该结果可能与预电离间隙在高气压区域时击穿发生在陶瓷套管上有关,该现象导致预电离间隙击穿过早,使得预电离间隙击穿时刻与主间隙波形波峰时刻之间的时间差大于主间隙击穿的形成时延,从而增大了主间隙击穿电压的分散性。

基于彩色相机RGGB通道的LIBS等离子体图像采集与分析

激光诱导击穿光谱(LIBS)是一种基于瞬态等离子体的发射光谱,而实现等离子体成像则对LIBS技术研究至关重要。本工作采用低成本的工业彩色相机实现了LIBS等离子体动态观测,本文以相机RGB通道分离出不同波段下的等离子体成像结果,进而实现对应波段下元素演化情况的动态观测。以铜锌合金靶材进行了方法验证,结果显示所提出的成像方式能够较好地完成不同元素(Zn、Cu、O)扩张情况的表征,且结合带通滤色片可实现更窄波段下的等离子体成像,证明了彩色相机RGB通道用于等离子体成像分析的可行性,为LIBS基础研究提供了一种实用的技术手段。

空间辐射环境下SiC功率MOSFET栅氧长期可靠性研究

利用等效1 MeV中子和γ射线对1200 V SiC功率MOSFET进行辐射,研究了电离损伤和位移损伤对器件的影响,并分析了辐射后器件栅氧长期可靠性。结果表明:中子辐射后器件导通电阻发生明显退化,与辐射引入近界面缺陷降低载流子寿命和载流子迁移率有关。时间依赖的介质击穿(TDDB)结果表明,栅泄漏电流呈现先增加后降低趋势,与空穴捕获和电子捕获效应有关。中子辐射后栅漏电演化形式未改变,但氧化层击穿时间增加,这是中子辐射缺陷增加了Fowler-Nordheim(FN)隧穿势垒的缘故。总剂量辐射在器件氧化层内引入陷阱电荷,使得器件阈值电压负向漂移。随后的TDDB测试表明,与中子辐射一致,总剂量辐射未改变栅漏电演化形式,但氧化层击穿时间提前。这是总剂量辐射在氧化层内引入额外空穴陷阱和中性电子陷阱的缘故。

软击穿对压控磁各向异性磁隧道结及其读电路性能影响

为了解决软击穿导致的压控磁各向异性磁隧道结(voltage-controlled magnetic anisotropy magnetic tunnel junction,VCMA-MTJ)及其读电路性能下降的问题,在对VCMA-MTJ软击穿机理深入分析的基础上,修正了VCMA-MTJ的电学模型,设计了一种具有固定参考电阻的VCMA-MTJ读电路和一种具有参考电阻调控单元的VCMA-MTJ读电路,研究了软击穿对VCMA-MTJ电阻R_(t)、隧穿磁阻比率M、软击穿时间T_(s)以及VCMA-MTJ读电路读错误率的影响。结果表明:软击穿的出现会导致R_(t)和M均随应力时间t的增加而降低,T_(s)随氧化层厚度t_(ox)的增大而缓慢增加,却随脉冲电压V_(b)的增大而迅速减少,与反平行态相比,平行态的T_(s)更短且M降低50%所需时间更少;具有固定参考电阻的VCMA-MTJ读电路可有效避免读“0”错误率的产生,但读“1”错误率却随t的增加而上升,而具有参考电阻调控单元的VCMA-MTJ读电路可在保持读“0”正确率的同时,对读“1”错误率改善达54%,在一定程度上削弱了软击穿对VCMA-MTJ读电路的影响。

基于激光诱导击穿光谱的瞬态温度测量方法

温度是影响材料力学性能的重要因素之一,准确测量器件温度是认识材料在应力作用下其力学性能演变以及评估设备健康状态和寿命的重要方式。面向功率器件开关过程中焊接界面快速温变测量的需求,传统方法存在时间分辨能力不足、难以测量瞬态温度的问题。文中基于激光诱导元素特征谱线强度与温度的密切相关性,提出了一种微秒量级时间分辨能力的表面温度测量方法,并建立了样品表面温度与光谱特性之间的定量关系。研究结果表明,物质表面温度提升导致激光诱导等离子体光谱强度和信噪比增强,且增强效果受到光谱采集延时和门宽影响。采用反向传播-人工神经网络(back propagation-artificial neural network,BP-ANN)和偏最小二乘(partial least squares,PLS)法对表面温度与光谱特性关系定量拟合并校准,拟合模型线性相关性拟合度指标均大于0.99。BP-ANN拟合模型的拟合偏差更小,其均方根误差(root mean squared error,RMSE)为2.582,正确率为98.3%。该方法为物体瞬态温度测量提供了一种有效手段,对功率器件焊接界面健康状态的评估给予了有力支撑。

激光诱导钛合金等离子体电子温度和电子密度的时间分辨测量

以波长为532 nm的纳秒脉冲激光器为激发源,使用中阶梯光栅光谱仪和增强电荷耦合器件(ICCD)获得了激光诱导钛合金等离子体的时间分辨发射光谱;基于发射光谱,利用玻尔兹曼图法和萨哈-玻尔兹曼图法计算了等离子体电子温度;采用斯塔克展宽法计算了电子密度。研究结果表明,相较于玻尔兹曼图法,萨哈-玻尔兹曼图法可提供更为准确的电子温度计算结果。此外,光谱采集门宽的增大会导致等离子体电子温度和电子密度计算值的减小。以上研究结果为钛合金的激光诱导击穿光谱(LIBS)分析提供了实验指导。

Measurement and control for a repetitive nanosecond-pulse breakdown experiment in polymer films

In order to perform data acquisition and avoid unwanted over-current damage to the power supply, a convenient and real-time method of experimentally investigating repetitive nanosecond-pulse breakdown in polymer dielectric samples is presented. The measurement-acquisition and control system not only records breakdown voltage and current, and time-to-breakdown duration, but also provides a real-time power-off protection for the power supply. Furthermore, the number of applied pulses can be calculated by the product of the time-to-breakdown duration and repetition rate. When the measured time-to-breakdown duration error is taken into account, the repetition rate of applied nanosecond-pulses should be below 40kHz. In addition, some experimental data on repetitive nanosecond-pulse breakdown of polymer films are presented and discussed.

Analysis of Pulverized Coal by Laser-Induced Breakdown Spectroscopy

Laser-induced breakdown spectroscopy （LIBS） has been used to detect atomic species in various enviromnents. The quantitative analysis （C, H, O, N and S） of representative coal samples are being carried out with LIBS, and the effects of particle size are analyzed. A powerful pulse Nd：YAG laser is focused on the coal sample at atmosphere pressure, and the emission spectra from laser-induced plasmas are measured by time-resolved spectroscopy, and the intensity of analyzed spectral lines is obtained through observing the laser plasma with a delay time of 0.4 #s. The experimental results show that the slope of calibration curve is nearly 1 when the concentration of the analyzed element is relatively low, and the slope of curve is nearly 0.5 when the concentration of C is higher than other elements. In addition, using the calibration-free model without self-absorption effect, the results show that the decreasing of particle size leads to an increase of the plasma temperature.

Applying the Different Statistical Tests in Analysis of Electrical Breakdown Mechanisms in Nitrogen Filled Gas Diode

This paper presents the results of our investigations of breakdown mechanisms, as well as a description of their influence on the distributions of time delay distributions, for a gas tube filled with nitrogen at 4 mbar. The values of the time delay are measured for different voitages, and the values of the relaxation times and their distributions and probability plots are analyzed. The obtained density distributions have Gaussian distributions and exponential distributions for different values of relaxation times （Gaussian for small values and exponential for large values of relaxation time）. It is shown that for middle values of relaxation time the delay distributions have a shape between Caussian and exponential distributions, which is a result of the different influences of electrical breakdown.

Influence of soaking time on nonlinear electrical behavior and dielectric properties of TiO_2-based varistor ceramics

The influence of soaking time on the nonlinear electrical behavior and dielectric properties of TiO2-based varistor ceramics was investigated. Based on single sintering process,six disk samples of (Sr,Bi,Si,Ta)-doped TiO2-based varistor ceramics were fabricated by sintering at 1 250 ℃ for 0.5-5.0 h. The samples were characterized by X-ray diffraction,voltage-current characteristics,energy spectra,metallographs,breakdown voltages,and apparent dielectric constant. It is found that the breakdown electrical field intensity at a current density of 10 mA/cm2 decreases from 5.5 to 4.1 V/mm first and then increases to 7.0 V/mm,the nonlinear coefficient increases from 2.39 to 2.62 first and then decreases to 2.42,and the apparent dielectric constant increases from 98 200 to 115 049 first and then decreases to 73 865 with the soaking time increasing from 0.5 to 5.0 h. These indicate that the optimal soaking time is 2.0-3.0 h considering both nonlinear electrical behavior and dielectric properties.

基于多孔隙触发的三电极场畸变开关设计与实验研究

场畸变开关是脉冲功率系统的关键器件,其低时延和低抖动性能参数是输出高幅值、快前沿脉冲的重要保障。在Marx发生器前级所用的场畸变开关,其要求时延和抖动尽可能小,才能保证Marx发生器装置输出特性具有快前沿、低抖动的稳定性。单孔触发电极的场畸变开关由于初始有效电子产生和扩散较慢导致时延较长,多孔触发电极结构的提出在一定程度上可以降低时延,但是抖动会增大,对于多孔触发电极场畸变开关如何同时保证低时延和低抖动需要进一步研究。因此,该文通过对传统单孔触发电极结构进行优化改进,提出了改变孔径大小和孔的个数的优化组合设计用于实现低时延,同时还显著地改善了抖动。实验结果表明:5 mm十六孔触发电极结构的场畸变开关在工作系数为71.1%~85.3%时,即工作电压在20~24 kV时,时延在45.2~41.1 ns之间,抖动在6.87~5.87 ns之间,相较于传统的单孔触发电极结构,其时延和抖动分别下降了14.8%和16.1%,性能提升明显。该文所设计的场畸变开关满足工程应用需求,为研究多孔型场畸变开关的性能提供了新思路。

Manpower Systems Operating under Heavy and Light Tailed Inter-Exit Time Distributions

This paper considers a Manpower system where “exits” of employed personnel produce some wastage or loss. This system monitors these wastages over the sequence of exit epochs {t0 = 0 and tk;k = 1, 2,…} that form a recurrent process and admit recruitment when the cumulative loss of man hours crosses a threshold level Y, which is also called the breakdown level. It is assumed that the inter-exit times Tk = tk-1 - tk, k = 1, 2,… are independent and identically distributed random variables with a common cumulative distribution function (CDF) B(t) = P(Tk t) which has a tail 1 – B(t) behaving like t-v with 1 v as t → ∞. The amounts {Xk} of wastages incurred during these inter-exit times {Tk} are independent and identically distributed random variables with CDF P(Xk X) = G(x) and Y is distributed, independently of {Xk} and {tk}, as an exponentiated exponential law with CDF H(y) = P(Y y) = (1 - e-λy)n. The mean waiting time to break down of the system has been obtained assuming B(t) to be heavy tailed and as well as light tailed. For the exponential case of G(x), a comparative study has also been made between heavy tailed mean waiting time to break down and light tailed mean waiting time to break down values. The recruitment policy operating under the heavy tailed case is shown to be more economical in all types of manpower systems.

INCREASING BREAKDOWN VOLTAGE OF LDMOST USING BURIED LAYER

A new LDMOST structure, named B-LDMOST that has a buried layer under the drain is proposed. The buried layer is not connected to the drift region, so it can optimize the vertical field distribution and increase breakdown voltage. The analysis and the simulated results show that B-LDMOST can increase breakdown voltage, with almost negligible influence on the other parameters such as on-resistance, switching time, and so on.

基于激光诱导击穿光谱的煤样典型特性研究

为了准确检测煤样的各种元素含量、灰分和发热量等工业指标,提出利用激光诱导击穿光谱技术进行煤样的光谱强度信息采集。激光诱导击穿光谱技术作为一种新型的元素分析技术,通过高能脉冲激光聚集在样品表面,分析等离子体释放出的元素谱线信息,得出样品元素含量和组成。而光谱信息采样的延迟时间是光谱检测中一个非常重要的参数,为了研究延迟时间对煤样激光诱导击穿光谱信号强弱的影响,提出了通过连续背景强度变化和相对标准偏差计算来判定测量煤样的最佳延迟时间。本研究选取山东济南众标科技有限公司的三种标准煤样作为研究对象,实验测试使用Nd∶YAG脉冲激光器,波长为1064nm。对于煤质的检测,采用AvaSpec Dual型光纤光谱仪,光谱探测波长范围为两通道195~467nm和615~973nm。延迟时间为247~252μs对三种标准煤样ZBM100、ZBM101、ZBM104的光谱信息进行特征分析,通过光谱信号强度和连续背景强度随延迟时间变化的关系,判断出247~252μs范围内的最佳延迟时间。随着延迟时间的增加,连续背景强度快速衰减,在250μs时,连续背景强度和光谱信号强度分别衰减到延迟时间为247μs时的30和50。其次通过在不同延迟时间下相对标准偏差的计算,判断出标准煤样样本中Al、Si、Fe三种元素最佳延迟时间为247μs、248μs、249μs所对应的标准偏差达到最小值,得到因选用标准煤样对象不同其相对标准偏差对应元素的最佳延迟时间也会有所差异。研究结果表明,三种标准煤样ZBM100、ZBM101、ZBM104的光谱强度在247~252μs的最佳采样延迟时间为250μs。此实验研究结果,为激光诱导击穿光谱技术探测和分析煤质检测的最佳延迟时间提供了依据。

Design of 1 kbit antifuse one time programmable memory IP using dual program voltage

A 1 kbit antifuse one time programmable(OTP) memory IP,which is one of the non-volatile memory IPs,was designed and used for power management integrated circuits(ICs).A conventional antifuse OTP cell using a single positive program voltage(VPP) has a problem when applying a higher voltage than the breakdown voltage of the thin gate oxides and at the same time,securing the reliability of medium voltage(VM) devices that are thick gate transistors.A new antifuse OTP cell using a dual program voltage was proposed to prevent the possibility for failures in a qualification test or the yield drop.For the newly proposed cell,a stable sensing is secured from the post-program resistances of several ten thousand ohms or below due to the voltage higher than the hard breakdown voltage applied to the terminals of the antifuse.The layout size of the designed 1 kbit antifuse OTP memory IP with Dongbu HiTek's 0.18 μm Bipolar-CMOS-DMOS(BCD) process is 567.9 μm×205.135 μm and the post-program resistance of an antifuse is predicted to be several ten thousand ohms.