Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The （0001）-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temp...Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The （0001）-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473K for 30rain. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy （XTEM） analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073 K annealing. Upon 1193 K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealingabides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135 nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914＋0.236eV.展开更多
A wall motion of a bubble freely oscillating in a liquid is studied from the point of view of energy conversions at different instants. It is shown that the time of the bubble oscillation can be divided into two disti...A wall motion of a bubble freely oscillating in a liquid is studied from the point of view of energy conversions at different instants. It is shown that the time of the bubble oscillation can be divided into two distinct intervals. In the first long interval （here called PK and KP intervals） the prevailing energy conversion is between the potential energy of the bubble and the kinetic energy of the liquid. In the second short interval （here called KI and IK intervals） the kinetic energy of the liquid is transformed into the internal energy of the gas/vapor in the bubble interior and into some other forms of energy. By observing the bubble wall motion in the PK and KP intervals, it is shown that only the value of the maximum bubble radius in the corresponding oscillation can be determined. However, only the knowledge of the maximum bubble radii is insufficient for formulation of a correct theoretical model. Unfortunately this fact is often not noticed in the literature.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 11475229
文摘Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The （0001）-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473K for 30rain. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy （XTEM） analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073 K annealing. Upon 1193 K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealingabides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135 nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914＋0.236eV.
基金supported by the Ministry of Education of the Czech Republic(Research Grant No.MSM 245100304)
文摘A wall motion of a bubble freely oscillating in a liquid is studied from the point of view of energy conversions at different instants. It is shown that the time of the bubble oscillation can be divided into two distinct intervals. In the first long interval （here called PK and KP intervals） the prevailing energy conversion is between the potential energy of the bubble and the kinetic energy of the liquid. In the second short interval （here called KI and IK intervals） the kinetic energy of the liquid is transformed into the internal energy of the gas/vapor in the bubble interior and into some other forms of energy. By observing the bubble wall motion in the PK and KP intervals, it is shown that only the value of the maximum bubble radius in the corresponding oscillation can be determined. However, only the knowledge of the maximum bubble radii is insufficient for formulation of a correct theoretical model. Unfortunately this fact is often not noticed in the literature.
