目的在弹箭发射与侵彻时,弹箭系统内部测试电路元件承受高g值加载。为提高电路元件的存活度,需对其进行缓冲防护。方法利用气炮装置发射钢弹,撞击底座获得高g值加载,研究铝合金薄壁管的抗冲击特性,并基于LS-DYNA研究薄壁管壁厚和冲击速...目的在弹箭发射与侵彻时,弹箭系统内部测试电路元件承受高g值加载。为提高电路元件的存活度,需对其进行缓冲防护。方法利用气炮装置发射钢弹,撞击底座获得高g值加载,研究铝合金薄壁管的抗冲击特性,并基于LS-DYNA研究薄壁管壁厚和冲击速度对高g值冲击过程的影响。结果钢弹冲击速度增加,底座的激励加速度幅值(Acceleration Amplitude of Excitation,AAE)逐渐增加,单层管(CirT)和多胞管(MT)的缓冲效率分别达到91.0%和74.7%,数值模拟所得AAE和响应加速度幅值(Acceleration Amplitude of Response,AAR)与实验结果误差<5%,薄壁管壁厚对激励加速度几乎无影响。结论本文所得结果对轻质元件的高g值冲击防护有较强的指导意义。展开更多
Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-...Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-ray diffraction,TEM,DCXD,FTIR and Van der Pauw technique were employed to determine the crystalline,optical and electrical properties of CMT epilayers,which are effectively im- proved as compared with the previous data.展开更多
文摘目的在弹箭发射与侵彻时,弹箭系统内部测试电路元件承受高g值加载。为提高电路元件的存活度,需对其进行缓冲防护。方法利用气炮装置发射钢弹,撞击底座获得高g值加载,研究铝合金薄壁管的抗冲击特性,并基于LS-DYNA研究薄壁管壁厚和冲击速度对高g值冲击过程的影响。结果钢弹冲击速度增加,底座的激励加速度幅值(Acceleration Amplitude of Excitation,AAE)逐渐增加,单层管(CirT)和多胞管(MT)的缓冲效率分别达到91.0%和74.7%,数值模拟所得AAE和响应加速度幅值(Acceleration Amplitude of Response,AAR)与实验结果误差<5%,薄壁管壁厚对激励加速度几乎无影响。结论本文所得结果对轻质元件的高g值冲击防护有较强的指导意义。
文摘Hg_(1-x)Cd_xTe(CMT)epilayers with corresponding wavelength of 10.6μm(x=0.2)were reproducibly grown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo- sitions was obtained.X-ray diffraction,TEM,DCXD,FTIR and Van der Pauw technique were employed to determine the crystalline,optical and electrical properties of CMT epilayers,which are effectively im- proved as compared with the previous data.