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A new static induction thyristor with high forward blocking voltage and excellent switching performances 被引量:1
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作者 张彩珍 王永顺 +1 位作者 刘春娟 汪再兴 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第3期54-57,共4页
A new static induction thyristor (SITH) with a strip anode region and p- buffer layer structure (SAP-B) has been successfully designed and fabricated. This structure is composed of a p- buffer layer and lightly do... A new static induction thyristor (SITH) with a strip anode region and p- buffer layer structure (SAP-B) has been successfully designed and fabricated. This structure is composed of a p- buffer layer and lightly doped n- regions embedded in the p+-emitter. Compared with the conventional structure of a buffed-gate with a diffused source region (DSR buffed-gate), besides the simple fabrication process, the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V, the blocking gain increased from 40 to 70, and the turn-offtime decreased from 0.8 to 0.4μs. 展开更多
关键词 static induction thyristor strip anode region and p- buffer layer structure forward blocking voltage turn-off time
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