Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo-MXene/Mo-Metal Sulfides for Electromagnetic Response

The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave(EMW)absorption materials.However,the loss mechanism in traditional heterostructures is relatively simple,guided by empirical observations,and is not monotonous.In this work,we presented a novel semiconductor-semiconductor-metal heterostructure sys-tem,Mo-MXene/Mo-metal sulfides(metal=Sn,Fe,Mn,Co,Ni,Zn,and Cu),including semiconductor junctions and Mott-Schottky junctions.By skillfully combining these distinct functional components(Mo-MXene,MoS_(2),metal sulfides),we can engineer a multiple heterogeneous interface with superior absorption capabilities,broad effective absorption bandwidths,and ultrathin matching thickness.The successful establishment of semiconductor-semiconductor-metal heterostructures gives rise to a built-in electric field that intensifies electron transfer,as confirmed by density functional theory,which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption.We detailed a successful synthesis of a series of Mo-MXene/Mo-metal sulfides featuring both semiconductor-semiconductor and semiconductor-metal interfaces.The achievements were most pronounced in Mo-MXene/Mo-Sn sulfide,which achieved remarkable reflection loss values of-70.6 dB at a matching thickness of only 1.885 mm.Radar cross-section calculations indicate that these MXene/Mo-metal sulfides have tremendous potential in practical military stealth technology.This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities.

面向RISC-V适配开发的x86 built-in函数转换方法

新兴架构RISC-V的生态建设需要将其他架构函数或软件包向RISC-V架构迁移适配。在研究GCC特定架构适配的built-in函数向RISC-V架构迁移时,提出一套x86到RISC-V的built-in函数转换方法,对于非扩展指令集(属非向量类型)built-in函数,采用RISC-V架构下相同功能的built-in或标准库函数替代;对于SSE扩展指令集built-in函数,建立数据类型映射和向量函数操作映射实现向RISC-V架构向量扩展函数或标准库函数的迁移,其中RVV函数迁移方式占比67%。实验结果表明:方法迁移的程序功能正确,方法有效。本文方法对其他扩展指令集built-in函数的迁移提供了指导,且与现有工作相比,更易扩展、覆盖面更广。

Modulating charge separation and transfer for high-performance photoelectrodes via built-in electric field

Constructing a built-in electric field has emerged as a key strategy for enhancing charge separation and transfer,thereby improving photoelectrochemical performance.Recently,considerable efforts have been devoted to this endeavor.This review systematically summarizes the impact of built-in electric fields on enhancing charge separation and transfer mechanisms,focusing on the modulation of built-in electric fields in terms of depth and orderliness.First,mechanisms and tuning strategies for built-in electric fields are explored.Then,the state-of-the-art works regarding built-in electric fields for modulating charge separation and transfer are summarized and categorized according to surface and interface depth.Finally,current strategies for constructing bulk built-in electric fields in photoelectrodes are explored,and insights into future developments for enhancing charge separation and transfer in high-performance photoelectrochemical applications are provided.

Enabling built-in electric fields on rhenium-vacancy-rich heterojunction interfaces of transition-metal dichalcogenides for pH-universal efficient hydrogen and electric energy generation

Most advanced hydrogen evolution reaction(HER)catalysts show high activity under alkaline conditions.However,the performance deteriorates at a natural and acidic pH,which is often problematic in practical applications.Herein,a rhenium(Re)sulfide–transition-metal dichalcogenide heterojunc-tion catalyst with Re-rich vacancies(NiS_(2)-ReS_(2)-V)has been constructed.The optimized catalyst shows extraordinary electrocatalytic HER performance over a wide range of pH,with ultralow overpotentials of 42,85,and 122 mV under alkaline,acidic,and neutral conditions,respectively.Moreover,the two-electrode system with NiS_(2)-ReS_(2)-V1 as the cathode provides a voltage of 1.73 V at 500 mA cm^(-2),superior to industrial systems.Besides,the open-circuit voltage of a single Zn–H_(2)O cell with NiS_(2)-ReS_(2)-V1 as the cathode can reach an impressive 90.9% of the theoretical value,with a maximum power density of up to 31.6 mW cm^(-2).Moreover,it shows remarkable stability,with sustained discharge for approximately 120 h at 10 mA cm^(-2),significantly outperforming commercial Pt/C catalysts under the same conditions in all aspects.A series of systematic characterizations and theoretical calculations demonstrate that Re vacancies on the heterojunction interface would generate a stronger built-in electric field,which profoundly affects surface charge distribution and subsequently enhances HER performance.

VSe_(2)/V_(2)C heterocatalyst with built-in electric field for efficient lithium-sulfur batteries:Remedies polysulfide shuttle and conversion kinetics

Lithium sulfur(Li-S)battery is a kind of burgeoning energy storage system with high energy density.However,the electrolyte-soluble intermediate lithium polysulfides(Li PSs)undergo notorious shuttle effect,which seriously hinders the commercialization of Li-S batteries.Herein,a unique VSe_(2)/V_(2)C heterostructure with local built-in electric field was rationally engineered from V_(2)C parent via a facile thermal selenization process.It exquisitely synergizes the strong affinity of V_(2)C with the effective electrocatalytic activity of VSe_(2).More importantly,the local built-in electric field at the heterointerface can sufficiently promote the electron/ion transport ability and eventually boost the conversion kinetics of sulfur species.The Li-S battery equipped with VSe_(2)/V_(2)C-CNTs-PP separator achieved an outstanding initial specific capacity of 1439.1 m A h g^(-1)with a high capacity retention of 73%after 100 cycles at0.1 C.More impressively,a wonderful capacity of 571.6 mA h g^(-1)was effectively maintained after 600cycles at 2 C with a capacity decay rate of 0.07%.Even under a sulfur loading of 4.8 mg cm^(-2),areal capacity still can be up to 5.6 m A h cm^(-2).In-situ Raman tests explicitly illustrate the effectiveness of VSe_(2)/V_(2)C-CNTs modifier in restricting Li PSs shuttle.Combined with density functional theory calculations,the underlying mechanism of VSe_(2)/V_(2)C heterostructure for remedying Li PSs shuttling and conversion kinetics was deciphered.The strategy of constructing VSe_(2)/V_(2)C heterocatalyst in this work proposes a universal protocol to design metal selenide-based separator modifier for Li-S battery.Besides,it opens an efficient avenue for the separator engineering of Li-S batteries.

Bimetallic selenide heterostructure with directional built-in electricfield confined in N-doped carbon nanofibers for superior sodium storage with ultralong lifespan

Constructing heterostructure is considered as an effective strategy to address the sluggish electronic and ionic kinetics of anode materials for sodium ion batteries(SIBs).However,realizing the orientated growth and uniform distribution of the heterostructure is still a great challenge.Herein,the regulated novel CoSe_(2)/NiSe_(2)heterostructure confined in N-doped carbon nanofibers(CoSe_(2)/NiSe_(2)@N-C)are prepared by using Co/Ni-ZIF template,in which,the CoSe_(2)/NiSe_(2)heterostructures realize uniform distribution on a micro level.Benefiting from the unique heterostructure and N-doped carbon nanofibers,the CoSe_(2)/NiSe_(2)@N-C deliveries superior rate capability and durable cycle lifespan with a reversible capacity of 400.5 mA h g^(-1)after 5000 cycles at 2 A g^(-1).The Na-ion full battery with CoSe_(2)/NiSe_(2)@N-C anode and layered oxide cathode displays a remarkable energy density of 563 W h kg^(-1)with 241.1 W kg^(-1)at 0.1 A g^(-1).The theoretical calculations disclose that the periodic and directional built-in electric-field along with the heterointerfaces of CoSe_(2)/NiSe_(2)@N-C can accelerate electrochemical reaction kinetics.The in(ex)situ experimental measurements reveal the reversible conversion reaction and stable structure of CoSe_(2)/NiSe_(2)@N-C during Na+insertion/extraction.The study highlights the potential ability of precisely controlled heterostructure to stimulate the electrochemical performances of advanced anode for SIBs.

Interfacial built-in electric field and crosslinking pathways enabling WS_(2)/Ti_(3)C_(2)T_(x) heterojunction with robust sodium storage at low temperature

Developing efficient energy storage for sodium-ion batteries(SIBs)by creating high-performance heterojunctions and understanding their interfacial interaction at the atomic/molecular level holds promise but is also challenging.Besides,sluggish reaction kinetics at low temperatures restrict the operation of SIBs in cold climates.Herein,cross-linking nanoarchitectonics of WS_(2)/Ti_(3)C_(2)T_(x) heterojunction,featuring built-in electric field(BIEF),have been developed,employing as a model to reveal the positive effect of heterojunction design and BIEF for modifying the reaction kinetics and electrochemical activity.Particularly,the theoretical analysis manifests the discrepancy in work functions leads to the electronic flow from the electron-rich Ti_(3)C_(2)T_(x) to layered WS_(2),spontaneously forming the BIEF and“ion reservoir”at the heterogeneous interface.Besides,the generation of cross-linking pathways further promotes the transportation of electrons/ions,which guarantees rapid diffusion kinetics and excellent structure coupling.Consequently,superior sodium storage performance is obtained for the WS_(2)/Ti_(3)C_(2)T_(x) heterojunction,with only 0.2%decay per cycle at 5.0 A g^(-1)(25℃)up to 1000 cycles and a high capacity of 293.5 mA h g^(-1)(0.1A g^(-1)after 100 cycles)even at-20℃.Importantly,the spontaneously formed BIEF,accompanied by“ion reservoir”,in heterojunction provides deep understandings of the correlation between structure fabricated and performance obtained.

Novel Substrate pn Junction Isolation for RF Integrated Inductors on Silicon

A new method for reducing the substrate rated losses of integrated spiral inductors is presented.The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the Si substrate. The substrate pn junction can be realized by using the standard silicon technologies without any additional processing steps.Integrated inductors on silicon are designed and fabricated. S parameters of the inductor based equivalent circuit are investigated and the inductor parameters are calculated.The impacts of the substrate pn junction isolation on the inductor quality factor are studied.The experimental results show that substrate pn junction isolation in certain depth has achieved a significant improvement.At 3GHz,the substrate pn junction isolation increases the inductor quality factor by 40%.

A Novel Lateral Solenoidal On-Chip Integrated Inductor Implemented in Conventional Si Process

A new structure of the on- chip integrated inductors im plem ented in conventional Si process is presented as a lateral solenoid.The fabrication process utilizes a conventional Si technology with standard double- layer m etal- lization.S param eters of the inductors based equivalent circuit are investigated and the inductor parameters are cal- culated from the m easured data.Experimental results are presented on an integrated inductors fabricated in a lateral solenoid type utilizing double m etal layers rather than a single metal layer as used in conventional planar spiral de- vices.Inductors with peak Q of 1.3and inductance value of 2 .2 n H are presented,which are com parable to conven- tional planar spiral inductors.

Performance Analysis of RF Spiral Inductor with Gradually Changed Metal Width and Space

To decrease the metal losses of RF spiral inductor,a novel layout structure with gradually reduced metal line width and space from outside to inside is presented. This gradual changed inductor has less eddy-current effect than the conventional inductor of fixed metal width and space. So the series resistance can be reduced and the quality （Q） factor of the inductor relating to metal losses is increased. The obtained experimental results corroborate the validity of the proposed method. For a 6nH inductor on high-resistivity silicon at 2.46GHz,Q factor of 14.25 is 11.3% higher than the conventional inductor with the same layout size. This inductor can be integrated with radio frequency integrated circuits to gain better performance in RF front end of a wireless communication system.

Equivalent Circuit Analysis of an RF Integrated Inductor with Ferrite Thin-Film

An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyzed. Circuit element parameters are extracted from RF measurements. Compared with the reference air-core inductor without magnetic film, L and Q of the ferrite thin-film inductor are 17% and 40% higher at 2GHz,respectively. Both the equivalent circuit analysis and test results demonstrate significant enhancement of the performance of RF integration inductors by ferrite thin-film integration.

A 2.4GHz CMOS Quadrature Voltage-Controlled Oscillator Based on Symmetrical Spiral Inductors and Differential Diodes

A voltage controlled oscillator (VCO) which can generate 2 4GHz quadrature local oscillating (LO) signals is reported.It combines a LC VCO,realized by on chip symmetrical spiral inductors and differential diodes,and a two stage ring VCO.The principle of this VCO is demonstrated and further the phase noise is discussed in detail.The fabrication of prototype is demonstrated using 0 25μm single poly five metal N well salicide CMOS digital process.The reports show that the novel VCO is can generate quadrature LO signals with a tuning range of more than 300MHz as well as the phase noise--104 33dBc/Hz at 600KHz offset at 2 41GHz (when measuring only one port of differential outputs).In addition,this VCO can work in low power supply voltage and dissipate low power,thus it can be used in many integrated transceivers.

A Novel Local-Dielectric-Thickening Technique for Performance Improvements of Spiral Inductors on Si Substrates

A novel local-dielectric-thickening technique i s presented for performance improvements of Si-based spiral inductors.This technique employs the processes of deposition,photolithography,and wet-etching,to locally thicken the oxide layer under the inductor,which can decrease the substrate loss and improve the inductor performance.Both the structures and processes are compact,economical,and compatible with CMOS processing.Several square spiral inductors with different inductances are fabricated,and the quality factors and the self-resonant frequencies both increase clearly with this proposed technique:for the 10nH,5nH,and 2nH inductors,the peak quality factors are effectively improved by 46.7%,49.7%,and 68.6%,respectively;however,the improvement percents of the self-resonant frequencies are more significant,which are 92.1%,91.0%,and no less than 68.1% respectively.

Patterned Dual pn Junctions Restraining Substrate Loss of an On-Chip Inductor

Dual pn junctions in lateral and vertical directions are formed by diffusing the p^＋ on the patterned n-well in standard CMOS technology, which are inserted under the inductor in order to reduce the currents in the substrate induced by the electromagnetic field from the inductor. The thickness of high resistance is not equivalent to the width of the depletion region of the vertical pn junctions,but the depth of the bottom pn junction in the substrate are both proposed and validated. For the first time, through the grounded p^＋-diffusion layer shielding the suhstrate from the electric field of the inductor, the width of the depletion regions of the lateral and vertical pn junctions are changed by increasing the voltage applied to the n wells. The quality factor is improved or reduced with the thickness of high resistance by 19%. This phenomenon validates the theory that the pn junction substrate isolation can reduce the loss caused by the currents in the substrate induced by the electromagnetic field from the inductor.

MEMS Inductor Consisting of Suspended Thick Crystalline Silicon Spiral with Copper Surface Coating

A novel MEMS inductor consisting of a planar single crystalline silicon spiral with a copper surface coating as the conductor is presented. Using a silicon-glass anodic bonding and deep etching formation-and-release process,a 40μm-thick silicon spiral is formed, which is suspended on a glass substrate to eliminate substrate loss. The surfaces of the silicon spiral are coated with highly conformal copper by electroless plating to reduce the resis- tive loss in the conductor,with thin nickel film plated on the surface of the copper layer for final surface passivation. The fabricated inductor exhibits a self-resonance frequency higher than 15GHz,with a quality factor of about 40 and an inductance of over 5nil at 11.3GHz. Simulations based on a compact equivalent circuit model of the inductor and parameter extraction using a characteristic-function approach are carried out,and good agreement with measurements is obtained.

Analysis and Optimum Design of Differential Inductors Using Distributed Capacitance Model

A distributed capacitance model for monolithic inductors is developed to predict the equivalently parasitical capacitances of the inductor.The ratio of the self-resonant frequency (f SR) of the differential-driven symmetric inductor to the f SR of the single-ended driven inductor is firstly predicted and explained.Compared with a single-ended configuration,experimental data demonstrate that the differential inductor offers a 127% greater maximum quality factor and a broader range of operating frequencies.Two differential inductors with low parasitical capacitance are developed and validated.

Lumped Equivalent Circuit of Planar Spiral Inductor for CMOS RFIC Application

A lumped π-type equivalent circuit of planar spiral inductor for CMOS RFIC application is developed by the domain decomposition method for conformal modules （DDM-CM）. Closed form expressions of lumped parameters for a square spiral inductor on a Si-SiO2 substrate are obtained and verified with the previously published experimental results.

计及低复杂度少保守性的并联分数阶逆变器系统稳定性研究

三电平T型换流器(three-level T-type converter,3LT^(2)C)与LCL滤波器在可再生能源发电系统中被广泛使用。最近研究表明,由于LCL滤波器的电感和电容的分数特性,分数阶模型在描述LCL-3LT^(2)C变换器的静态和动态行为方面比整数阶模型具有更高的准确性。为了评估并网分数LCL-3LT^(2)C(FLCL-3LT^(2)C)的稳定性,通常采用分数阶阻抗模型;然而,由于分数微积分的存在,特征方程的整体阶次会增加,从而导致高处理器计算负荷。此外,现有的特征值估计方法在特征值取值范围精度方面存在不足。为了解决这些问题,提出了一种基于Ostrowski定理的低复杂度和较少保守性的稳定性判据,该准则根据系统环路增益矩阵确定关键稳定点。首先,在不平衡电网下建立了单个和多并联F3LT^(2)C的分数序列导纳模型。其次,通过Ostrowski定理确定了系统的临界稳定点。仿真和实验结果验证了所提出的分数模型的建模准确性,以及提出的低复杂度和少保守性稳定性判据的有效性。

Parameter Extraction for 2-π Equivalent Circuit Model of RF CMOS Spiral Inductors

A novel parameter extraction method with rational functions is presented for the 2-πequivalent circuit model of RF CMOS spiral inductors. The final S-parameters simulated by the circuit model closely match experimental data. The extraction strategy is straightforward and can be easily implemented as a CAD tool to model spiral inductors. The resulting circuit models will be very useful for RF circuit designers.

Piezopotential augmented photo-and photoelectro-catalysis with a built-in electric field

Rapid technological development and population growth are responsible for a series of imminent environmental problems and an ineluctable energy crisis.The application of semiconductor nanomaterials in photocatalysis or photoelectrocatalysis(PEC)for either the degradation of contaminants in the environment or the generation of hydrogen as clean fuel is an effective approach to alleviate these problems.However,the efficiency of such processes remains suboptimal for real applications.Reasonable construction of a built-in electric field is considered to efficiently enhance carrier separation and reduce carrier recombination to improve catalytic performance.In the past decade,as a new method to enhance the built-in electric field,the piezoelectric effect from piezoelectric materials has been extensively studied.In this review,we provide an overview of the properties of piezoelectric materials and the mechanisms of piezoelectricity and ferroelectricity for a built-in electric field.Then,piezoelectric and ferroelectric polarization regulated built-in electric fields that mediate catalysis are discussed.Furthermore,the applications of piezoelectric semiconductor materials are also highlighted,including degradation of pollutants,bacteria disinfection,water splitting for H2 generation,and organic synthesis.We conclude by discussing the challenges in the field and the exciting opportunities to further improve piezo-catalytic efficiency.