A new model for film bulk acoustic wave resonators

Based on cavity resonance and sandwich composite plate （3D） theoretical model for frequency dispersion characterization theory, this paper presents a universal three-dimensional and displacement profile shapes of the film bulk acoustic resonator （FBARs）. This model provides results of FBAR excited thickness-extensional and flexure modes, and the result of frequency dispersion is proposed in which the thicknesses and impedance of the electrodes and the piezoelectric material are taken into consideration; its further simplification shows good agreement with the modified Butterworth-Van-Dyke （MBVD） model. The displacement profile reflects the vibration stress distribution of electrode shapes and the lateral resonance effect, which depends on the axis ratio of the electrode shapes a/b. The results are consistent with the 3D finite element method modeling and laser interferometry measurement in general.

Tunable Ba_(0.5) Sr_(0.5) TiO_3 film bulk acoustic resonators using SiO_2 /Mo Bragg reflectors

Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators（FBARs） based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3（BST） films at 800 C.The dc bias-dependent resonance may be attributed to the piezoelectricity of the BST film induced by an electrostrictive effect.The series resonant frequency is strongly dc bias-dependent and shifts downwards with dc bias increasing,while the parallel resonant frequency is only weakly dc bias-dependent and slightly shifts upwards at low dc bias（ 45 V） while downwards at higher dc bias.The calculated relative tunability of shifts at series resonance frequency is around 2.3% and the electromechanical coupling coefficient is up to approximately 8.09% at 60-V dc bias,which can be comparable to AlN FBARs.This suggests that a high-quality tunable BST FBAR device can be achieved through the use of molybdenum（Mo） as the high acoustic impedance layer in a Bragg reflector,which not only provides excellent acoustic isolation from the substrate,but also improves the crystallinity of BST films withstanding higher deposition temperature.

Manipulations of micro/nanoparticles using gigahertz acoustic streaming tweezers

Contactless acoustic manipulation of micro/nanoscale particles has attracted considerable attention owing to its near independence of the physical and chemical properties of the targets,making it universally applicable to almost all biological systems.Thin-film bulk acoustic wave(BAW)resonators operating at gigahertz(GHz)frequencies have been demonstrated to generate localized high-speed microvortices through acoustic streaming effects.Benefitting from the strong drag forces of the high-speed vortices,BAW-enabled GHz acoustic streaming tweezers(AST)have been applied to the trapping and enrichment of particles ranging in size from micrometers to less than 100 nm.However,the behavior of particles in such 3D microvortex systems is still largely unknown.In this work,the particle behavior(trapping,enrichment,and separation)in GHz AST is studied by theoretical analyses,3D simulations,and microparticle tracking experiments.It is found that the particle motion in the vortices is determined mainly by the balance between the acoustic streaming drag force and the acoustic radiation force.This work can provide basic design principles for AST-based lab-on-a-chip systems for a variety of applications.

High Q,high frequency,high overtone bulk acoustic resonator with ZnO films

Bulk acoustic wave resonators with piezoelectric films have been widely explored for the small size and high quality factor （Q） at GHz. This paper describes a high overtone bulk acoustic resonator （HBAR） based on AI/ZnO/AI sandwich layers and c-axis sapphire substrate. ZnO film with high quality c-axis orientation has been obtained using DC magnetron sputtering. The fabricated HBAR presents high Q at the multiple resonances from a 0.5-4.0 GHz wide band with a total size （including the contact pads） of 0.6 mm×0.3 mm×0.4 mm, The device exhibits the best acoustic coupling at around 2.4 GHz, which agrees with the simulation results based on the one-dimensional Mason equivalent circuit model. The HBAR also demonstrates Q values of 30 000, 25 000, and 6500 at 1.49, 2.43, and 3.40 GHz, respectively. It is indicated that the HBAR has potential applications for the low phase noise high frequency oscillator or microwave signal source.