The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon M...The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as a result of the displacement damage in the channel induced by heavy ion strike. The off-state leakage current degradation and threshold voltage shift are also observed after heavy ion irradiation. The results suggest that the radiation induced damage of sub-100 nm MOS devices caused by heavy ion irradiation should be paid attention.展开更多
This paper presents a novel anti-shock bulk silicon etching apparatus for solving a universal problem which occurs when releasing the diaphragm （e.g. SiNx）, that the diaphragm tends to be probably cracked by the imp...This paper presents a novel anti-shock bulk silicon etching apparatus for solving a universal problem which occurs when releasing the diaphragm （e.g. SiNx）, that the diaphragm tends to be probably cracked by the impact of heatinginduced bubbles, the swirling of heating-induced etchant, dithering of the hand and imbalanced etchant pressure during the wafer being taken out. Through finite element methods, the causes of the diaphragm cracking are analysed. The impact of heating-induced bubbles could be the main factor which results in the failure stress of the SiNx diaphragm and the rupture of it. In order to reduce the four potential effects on the cracking of the released diaphragm, an anti-shock hulk silicon etching apparatus is proposed for using during the last etching process of the diaphragm release. That is, the silicon wafer is first put into the regular constant temperature etching apparatus or ultrasonic plus, and when the residual bulk silicon to be etched reaches near the interface of the silicon and SiNx diaphragm, within a distance of 50-80μm （the exact value is determined by the thickness, surface area and intensity of the released diaphragm）, the wafer is taken out carefully and put into the said anti-shock silicon etching apparatus. The wafer＇s position is at the geometrical centre, also the centre of gravity of the etching vessel. An etchant outlet is built at the bottom. The wafer is etched continuously, and at the same time the etchant flows out of the vessel. Optionally, two symmetrically placed low-power heating resistors are put in the anti-shock silicon etching apparatus to quicken the etching process. The heating resistors＇ power should be low enough to avoid the swirling of the heating-induced etchant and the impact of the heating-induced bubbles on the released diaphragm. According to the experimental results, the released SiNx diaphragm thus treated is unbroken, which proves the practicality of the said anti-shock bulk silicon etching apparatus.展开更多
A fabrication method which integrates silicon anisotropic etching micromachining with UV-LIGA technology to make complex microstmetures is presented. This proposed combined process enables the fabrication of high-aspe...A fabrication method which integrates silicon anisotropic etching micromachining with UV-LIGA technology to make complex microstmetures is presented. This proposed combined process enables the fabrication of high-aspect-ratio and three-dimensional （3D） microstructures, which cannot be fabricated by silicon bulk mieromachining or UV-LIGA alone. To demonstrate this combined method, the 100μm thick SU-8 micro gears were fabricated on the silicon convex square structure, which is 100μm × 100μm× 80μm in dimension. In the subsequent micro hot embossing process, a novel type of plastics polyethylene terephtalate glycol （PETG） was tried for use. Through optimizing process parameters, PETG shows the potential of being used as plastic replica in micro-electro-mechanical system （MEMS）. This fabrication technology provides a new option for the increasing need of functionality, quality and economy of MEMS.展开更多
Silicon bulk etching is an important part of micro-electro-mechanical system(MEMS) technology. In this work, a novel etching method is proposed based on the vapor from tetramethylammonium hydroxide(TMAH) solution heat...Silicon bulk etching is an important part of micro-electro-mechanical system(MEMS) technology. In this work, a novel etching method is proposed based on the vapor from tetramethylammonium hydroxide(TMAH) solution heated up to boiling point. The monocrystalline silicon wafer is positioned over the solution surface and can be anisotropically etched by the produced vapor. This etching method does not rely on the expensive vacuum equipment used in dry etching. Meanwhile, it presents several advantages like low roughness, high etching rate and high uniformity compared with the conventional wet etching methods. The etching rate and roughness can reach 2.13 μm/min and 1.02 nm, respectively. Furthermore,the diaphragm structure and Al-based pattern on the non-etched side of wafer can maintain intact without any damage during the back-cavity fabrication. Finally, an etching mechanism has been proposed to illustrate the observed experimental phenomenon. It is suggested that there is a water thin film on the etched surface during the solution evaporation. It is in this water layer that the ionization and etching reaction of TMAH proceed, facilitating the desorption of hydrogen bubble and the enhancement of molecular exchange rate. This new etching method is of great significance in the low-cost and high-quality micro-electromechanical system industrial fabrication.展开更多
We investigated the deformation behaviors of Zr_65Cu_17.5Ni_10Al_7.5 in superplastic forming in silicon mould via numerical modeling and experiments. The data needed for the constitutive formulation were obtained from...We investigated the deformation behaviors of Zr_65Cu_17.5Ni_10Al_7.5 in superplastic forming in silicon mould via numerical modeling and experiments. The data needed for the constitutive formulation were obtained from compressive tests to establish a material library for finite-element simulation using a DEFORM 3D software. A constant speed forming process of a micro gear was modeled where the loading force, feature size and amount of deformation in the micro gear in silicon mould were analyzed in detail for the optimal requirements of micro gear forming and the protection of silicon mould. Guided by the modeling parameters, an amorphous metal micro gear was successfully obtained by our home-made superplastic forming system with the optimized parameters （temperature of 683 K, top speed of 0.003 mm/s until the load force reaching limiting value at 1960 N, and a gradually decelerating process for holding the force to the end）. Our work gives a good example for optimization of superplastic forming and fabrication of BMGs in microparts.展开更多
The enhanced optical absorption measured by Constant Photocurrent Method (CPM) of hydrogenated nanocrystalline silicon thin films is due mainly to bulk and/or surface light scattering effects. A new numerical method i...The enhanced optical absorption measured by Constant Photocurrent Method (CPM) of hydrogenated nanocrystalline silicon thin films is due mainly to bulk and/or surface light scattering effects. A new numerical method is presented to calculate both true optical absorption and scattering coefficient from CPM absorption spectra of nanotextured nano-crystalline silicon films. Bulk and surface light scattering contributions can be unified through the correlation obtained between the scattering coefficient and surface roughness obtained using our method.展开更多
文摘The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as a result of the displacement damage in the channel induced by heavy ion strike. The off-state leakage current degradation and threshold voltage shift are also observed after heavy ion irradiation. The results suggest that the radiation induced damage of sub-100 nm MOS devices caused by heavy ion irradiation should be paid attention.
文摘This paper presents a novel anti-shock bulk silicon etching apparatus for solving a universal problem which occurs when releasing the diaphragm （e.g. SiNx）, that the diaphragm tends to be probably cracked by the impact of heatinginduced bubbles, the swirling of heating-induced etchant, dithering of the hand and imbalanced etchant pressure during the wafer being taken out. Through finite element methods, the causes of the diaphragm cracking are analysed. The impact of heating-induced bubbles could be the main factor which results in the failure stress of the SiNx diaphragm and the rupture of it. In order to reduce the four potential effects on the cracking of the released diaphragm, an anti-shock hulk silicon etching apparatus is proposed for using during the last etching process of the diaphragm release. That is, the silicon wafer is first put into the regular constant temperature etching apparatus or ultrasonic plus, and when the residual bulk silicon to be etched reaches near the interface of the silicon and SiNx diaphragm, within a distance of 50-80μm （the exact value is determined by the thickness, surface area and intensity of the released diaphragm）, the wafer is taken out carefully and put into the said anti-shock silicon etching apparatus. The wafer＇s position is at the geometrical centre, also the centre of gravity of the etching vessel. An etchant outlet is built at the bottom. The wafer is etched continuously, and at the same time the etchant flows out of the vessel. Optionally, two symmetrically placed low-power heating resistors are put in the anti-shock silicon etching apparatus to quicken the etching process. The heating resistors＇ power should be low enough to avoid the swirling of the heating-induced etchant and the impact of the heating-induced bubbles on the released diaphragm. According to the experimental results, the released SiNx diaphragm thus treated is unbroken, which proves the practicality of the said anti-shock bulk silicon etching apparatus.
基金Supported by the National Natural Science Foundation of China （No. 50575132）, Science and Technology Commission of Shanghai Mtmicipality （No. O5JC14061 ） and National Key Laboratory of Micro/Nano Fabrication Technology Foundation （No. 9140C7903060706）
文摘A fabrication method which integrates silicon anisotropic etching micromachining with UV-LIGA technology to make complex microstmetures is presented. This proposed combined process enables the fabrication of high-aspect-ratio and three-dimensional （3D） microstructures, which cannot be fabricated by silicon bulk mieromachining or UV-LIGA alone. To demonstrate this combined method, the 100μm thick SU-8 micro gears were fabricated on the silicon convex square structure, which is 100μm × 100μm× 80μm in dimension. In the subsequent micro hot embossing process, a novel type of plastics polyethylene terephtalate glycol （PETG） was tried for use. Through optimizing process parameters, PETG shows the potential of being used as plastic replica in micro-electro-mechanical system （MEMS）. This fabrication technology provides a new option for the increasing need of functionality, quality and economy of MEMS.
基金supported by the National Natu-ral Science Foundation of China(No.51675493 and No.51975542)the National Key R&D Program of China(No.2018YFF0300605,No.2019YFF0301802,and No.2019YFB2004802)Program for the Outstanding Innovative Teams of Higher Learning Institutions of Shanxi and Shanxi"1331 Project"Key Subject Construction(1331KSC).
文摘Silicon bulk etching is an important part of micro-electro-mechanical system(MEMS) technology. In this work, a novel etching method is proposed based on the vapor from tetramethylammonium hydroxide(TMAH) solution heated up to boiling point. The monocrystalline silicon wafer is positioned over the solution surface and can be anisotropically etched by the produced vapor. This etching method does not rely on the expensive vacuum equipment used in dry etching. Meanwhile, it presents several advantages like low roughness, high etching rate and high uniformity compared with the conventional wet etching methods. The etching rate and roughness can reach 2.13 μm/min and 1.02 nm, respectively. Furthermore,the diaphragm structure and Al-based pattern on the non-etched side of wafer can maintain intact without any damage during the back-cavity fabrication. Finally, an etching mechanism has been proposed to illustrate the observed experimental phenomenon. It is suggested that there is a water thin film on the etched surface during the solution evaporation. It is in this water layer that the ionization and etching reaction of TMAH proceed, facilitating the desorption of hydrogen bubble and the enhancement of molecular exchange rate. This new etching method is of great significance in the low-cost and high-quality micro-electromechanical system industrial fabrication.
基金Funded by the National Natural Science Foundation of China(Nos.51222508,51175211)
文摘We investigated the deformation behaviors of Zr_65Cu_17.5Ni_10Al_7.5 in superplastic forming in silicon mould via numerical modeling and experiments. The data needed for the constitutive formulation were obtained from compressive tests to establish a material library for finite-element simulation using a DEFORM 3D software. A constant speed forming process of a micro gear was modeled where the loading force, feature size and amount of deformation in the micro gear in silicon mould were analyzed in detail for the optimal requirements of micro gear forming and the protection of silicon mould. Guided by the modeling parameters, an amorphous metal micro gear was successfully obtained by our home-made superplastic forming system with the optimized parameters （temperature of 683 K, top speed of 0.003 mm/s until the load force reaching limiting value at 1960 N, and a gradually decelerating process for holding the force to the end）. Our work gives a good example for optimization of superplastic forming and fabrication of BMGs in microparts.
文摘The enhanced optical absorption measured by Constant Photocurrent Method (CPM) of hydrogenated nanocrystalline silicon thin films is due mainly to bulk and/or surface light scattering effects. A new numerical method is presented to calculate both true optical absorption and scattering coefficient from CPM absorption spectra of nanotextured nano-crystalline silicon films. Bulk and surface light scattering contributions can be unified through the correlation obtained between the scattering coefficient and surface roughness obtained using our method.
