Electroluminescence （EL） and temperature-dependent photolumineseenee measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes （LDs） before lasing. Based on the ABC ...Electroluminescence （EL） and temperature-dependent photolumineseenee measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes （LDs） before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6kA/cm2 are similar, while LD with threshold current density of 4kA/cm2 exhibits a smaller auger- like recombination rate compared with the one of 6kA/cm2. The internal quantum efficiency droop is more serious for LD with higher threshold current density. temperature-dependent photoluminescence is consistent The internal quantum efficiency value estimated from with EL measurements.展开更多
A tunable single-passband microwave photonic filter is proposed and demonstrated, based on a laser diode (LD) array with multiple optical carriers and a Fabry-Perot (F-P) laser diode. Multiple optical carriers in conj...A tunable single-passband microwave photonic filter is proposed and demonstrated, based on a laser diode (LD) array with multiple optical carriers and a Fabry-Perot (F-P) laser diode. Multiple optical carriers in conjunction with the F-P LD will realize a filter with multiple passbands. By adjusting the wavelengths of the multiple optical carriers, multiple passbands are merged into a single passband with a broadened bandwidth. By varying the number of the optical carrier, the bandwidth can be adjusted. The central frequency can be tuned by adjusting the wavelength of the multiple optical carriers simultaneously. A single-passband filter implemented by two optical carriers is experimentally demonstrated.展开更多
A fiber-coupled laser-diode （LD） end-pumped Nd：GdVO4 slab continuous-wave （CW） 912-nm laser and an LD bar end-pumped Nd：GdVO4 slab CW 912-nm laser are both demonstrated in this paper. Using the fiber-coupled LD ...A fiber-coupled laser-diode （LD） end-pumped Nd：GdVO4 slab continuous-wave （CW） 912-nm laser and an LD bar end-pumped Nd：GdVO4 slab CW 912-nm laser are both demonstrated in this paper. Using the fiber-coupled LD of end-pumped type, a highest CW 912-nm laser output power of 10.17 W is obtained with a high optical to-optical conversion efficiency of 24.6% and a slope efficiency of 34.5%. The measured M2 factors of beam quality in x and y directions are 5.3 and 5.1, respectively. Besides, an LD bar of end-pumped type is used to realize CW 912-nm laser output, which has the advantages of compactness and low cost. When the pump power is 38.8 W, the output power is 8.87 W and the measured M^2 factors of beam quality in x and y directions are 16 and 1.31, respectively. In order to improve the beam quality of the 912-nm laser at x direction, a new quasi-concentric laser resonator will be designed, and an LD bar end-pumped Nd：GdVO4 slab high-power CW 912-nm TEM00 laser will be realized in the future.展开更多
为了使半导体激光器的激光波长和输出功率稳定,必须对其温度进行控制。介绍了LD泵浦固体激光器恒温控制系统的软、硬件方面设计。温度采集电路采用具有高输入阻抗和高共模抑制比的测量放大电路,利用半导体制冷器(thermo electric cooler...为了使半导体激光器的激光波长和输出功率稳定,必须对其温度进行控制。介绍了LD泵浦固体激光器恒温控制系统的软、硬件方面设计。温度采集电路采用具有高输入阻抗和高共模抑制比的测量放大电路,利用半导体制冷器(thermo electric cooler,TEC)作为控温系统的控温执行器件。由改变驱动TEC电流的方向来实现制冷或者加热,软件采用增量型防积分饱和的数字PID算法,根据实验结果温控控制精度在±0.5℃,可以满足对半导体激光器温度控制精度和稳定性的要求。展开更多
Organic semiconductor is one of the most promising luminescent and lasing materials that can be chemically synthesized with a controllable performance and possess high cross-section of stimulated emission[1].Organic s...Organic semiconductor is one of the most promising luminescent and lasing materials that can be chemically synthesized with a controllable performance and possess high cross-section of stimulated emission[1].Organic semiconductor laser diodes(OSLDs)can be prepared by simple processing technologies and integrated easily with other optoelectronic devices.As a result,OSLDs would展开更多
We propose and experimentally demonstrate a recorded 1-m bidirectional 20.231-Gbit/s tricolor R/G/B laser diode(LD) based visible-light communication(VLC) system supporting signal remodulation. In the signal remodulat...We propose and experimentally demonstrate a recorded 1-m bidirectional 20.231-Gbit/s tricolor R/G/B laser diode(LD) based visible-light communication(VLC) system supporting signal remodulation. In the signal remodulation system, an LD source is not needed at the client side. The client reuses the downstream signal sent from the central office(CO) and remodulates it to produce the upstream signal. As the LD sources are located at the CO, the laser wavelength and temperature managements at the cost-sensitive client side are not needed.This is the first demonstration, to our knowledge, of a >20 Gbit∕s data rate tricolor R/G/B VLC signal transmission supporting upstream remodulation.展开更多
The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic phot...The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity.展开更多
Near-infrared(NIR)phosphor-converted light-emitting diodes/laser diodes(LEDs/LDs)are prospective lighting sources for NIR spectroscopy.However,developing NIR phosphor materials with desired thermal robustness and high...Near-infrared(NIR)phosphor-converted light-emitting diodes/laser diodes(LEDs/LDs)are prospective lighting sources for NIR spectroscopy.However,developing NIR phosphor materials with desired thermal robustness and high photoelectric efficiency is a crucial challenge for their applications.In this work,based on the cationic radius matching effect,a series of(Lu,Y)_(3)(Al,Sc,Cr)_(2)Al_(3)O_(12)NIR phosphor ceramics(LuYScCr NIR-PCs)were fabricated by vacuum sintering.Excellent thermal stability(95%@150℃)was obtained in the prepared NIR-PCs,owing to their weak electron-phonon coupling effect(small Huang-Rhys factor).Being excited at 460 nm,NIR-PCs realized a broadband emission(650-850 nm)with internal quantum efficiency(IQE)of 60.68%.Combining NIR-PCs with LED/LD chips,the maximum output power of the encapsulated LED prototype was 447 mW@300 mA with photoelectric efficiency of as high as 18.6%@180 mA,and the maximum output power of the LD prototype was 814 mW@2.5 A.The working temperatures of NIR-PCs were 70.8℃@300 mA(LED)and 102.8℃@3 A(LD).Finally,the prepared NIR-PCs applied in food detection were verified in this study,demonstrating their anticipated application prospects in the future.展开更多
基金Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0401803 and 2016YFB0402002the National Natural Science Foundation of China under Grant Nos 61574160 and 61334005+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA09020401the Visiting Professorship for Senior International Scientists of the Chinese Academy of Sciences under Grant No 2013T2J0048
文摘Electroluminescence （EL） and temperature-dependent photolumineseenee measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes （LDs） before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6kA/cm2 are similar, while LD with threshold current density of 4kA/cm2 exhibits a smaller auger- like recombination rate compared with the one of 6kA/cm2. The internal quantum efficiency droop is more serious for LD with higher threshold current density. temperature-dependent photoluminescence is consistent The internal quantum efficiency value estimated from with EL measurements.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61302026,61275067 and 61575034the Jiangsu Natural Science Foundation under Grant No BK2012432
文摘A tunable single-passband microwave photonic filter is proposed and demonstrated, based on a laser diode (LD) array with multiple optical carriers and a Fabry-Perot (F-P) laser diode. Multiple optical carriers in conjunction with the F-P LD will realize a filter with multiple passbands. By adjusting the wavelengths of the multiple optical carriers, multiple passbands are merged into a single passband with a broadened bandwidth. By varying the number of the optical carrier, the bandwidth can be adjusted. The central frequency can be tuned by adjusting the wavelength of the multiple optical carriers simultaneously. A single-passband filter implemented by two optical carriers is experimentally demonstrated.
文摘A fiber-coupled laser-diode （LD） end-pumped Nd：GdVO4 slab continuous-wave （CW） 912-nm laser and an LD bar end-pumped Nd：GdVO4 slab CW 912-nm laser are both demonstrated in this paper. Using the fiber-coupled LD of end-pumped type, a highest CW 912-nm laser output power of 10.17 W is obtained with a high optical to-optical conversion efficiency of 24.6% and a slope efficiency of 34.5%. The measured M2 factors of beam quality in x and y directions are 5.3 and 5.1, respectively. Besides, an LD bar of end-pumped type is used to realize CW 912-nm laser output, which has the advantages of compactness and low cost. When the pump power is 38.8 W, the output power is 8.87 W and the measured M^2 factors of beam quality in x and y directions are 16 and 1.31, respectively. In order to improve the beam quality of the 912-nm laser at x direction, a new quasi-concentric laser resonator will be designed, and an LD bar end-pumped Nd：GdVO4 slab high-power CW 912-nm TEM00 laser will be realized in the future.
文摘为了使半导体激光器的激光波长和输出功率稳定,必须对其温度进行控制。介绍了LD泵浦固体激光器恒温控制系统的软、硬件方面设计。温度采集电路采用具有高输入阻抗和高共模抑制比的测量放大电路,利用半导体制冷器(thermo electric cooler,TEC)作为控温系统的控温执行器件。由改变驱动TEC电流的方向来实现制冷或者加热,软件采用增量型防积分饱和的数字PID算法,根据实验结果温控控制精度在±0.5℃,可以满足对半导体激光器温度控制精度和稳定性的要求。
基金supported by the CAS Innovation Program, the National Natural Science Foundation of China (51503196, 61775211, 61704170, 61405195 and 61774154)the financial support from the State Key Laboratory of Luminescence and Applications
文摘Organic semiconductor is one of the most promising luminescent and lasing materials that can be chemically synthesized with a controllable performance and possess high cross-section of stimulated emission[1].Organic semiconductor laser diodes(OSLDs)can be prepared by simple processing technologies and integrated easily with other optoelectronic devices.As a result,OSLDs would
基金Ministry of Science and Technology,Taiwan(MOST)(MOST-106-2221-E-009-105-MY3)Aim for the Top University PlanMinistry of Education(MOE),Taiwan,China
文摘We propose and experimentally demonstrate a recorded 1-m bidirectional 20.231-Gbit/s tricolor R/G/B laser diode(LD) based visible-light communication(VLC) system supporting signal remodulation. In the signal remodulation system, an LD source is not needed at the client side. The client reuses the downstream signal sent from the central office(CO) and remodulates it to produce the upstream signal. As the LD sources are located at the CO, the laser wavelength and temperature managements at the cost-sensitive client side are not needed.This is the first demonstration, to our knowledge, of a >20 Gbit∕s data rate tricolor R/G/B VLC signal transmission supporting upstream remodulation.
基金Project supported by the National Natural Science Foundation of China(No.11474036)the National Key Lab of High Power Semiconductor Lasers Foundations(No.9140C310103120C3101)
文摘The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity.
基金The authors acknowledge the generous financial support from the National Natural Science Foundation of China(Nos.52302139,61973103,52272141,and 51972060)Doctoral Foundation Project of Henan University of Technology(No.2021BS069)+3 种基金Natural Science Foundation of Henan Province Youth Fund(No.222300420039)the Key Science and Technology Program of Henan Province(Nos.222102210023 and 232102211074)Project of Songshan Laboratory(No.YYJC072022020)Key Specialized Research of Zhengzhou Science and Technology Innovation Cooperation(No.21ZZXTCX01).
文摘Near-infrared(NIR)phosphor-converted light-emitting diodes/laser diodes(LEDs/LDs)are prospective lighting sources for NIR spectroscopy.However,developing NIR phosphor materials with desired thermal robustness and high photoelectric efficiency is a crucial challenge for their applications.In this work,based on the cationic radius matching effect,a series of(Lu,Y)_(3)(Al,Sc,Cr)_(2)Al_(3)O_(12)NIR phosphor ceramics(LuYScCr NIR-PCs)were fabricated by vacuum sintering.Excellent thermal stability(95%@150℃)was obtained in the prepared NIR-PCs,owing to their weak electron-phonon coupling effect(small Huang-Rhys factor).Being excited at 460 nm,NIR-PCs realized a broadband emission(650-850 nm)with internal quantum efficiency(IQE)of 60.68%.Combining NIR-PCs with LED/LD chips,the maximum output power of the encapsulated LED prototype was 447 mW@300 mA with photoelectric efficiency of as high as 18.6%@180 mA,and the maximum output power of the LD prototype was 814 mW@2.5 A.The working temperatures of NIR-PCs were 70.8℃@300 mA(LED)and 102.8℃@3 A(LD).Finally,the prepared NIR-PCs applied in food detection were verified in this study,demonstrating their anticipated application prospects in the future.
