Boron nitride （BN） films for high-frequency surface acoustic wave （SAW） devices are deposited on Ti/AI/Si（111） wafers by radio frequency （RF） magnetron sputtering. The structure of BN films is investigated by ...Boron nitride （BN） films for high-frequency surface acoustic wave （SAW） devices are deposited on Ti/AI/Si（111） wafers by radio frequency （RF） magnetron sputtering. The structure of BN films is investigated by Fourier transform infrared （FrlR） spectroscopy and X-ray diffraction （XRD） spectra, and the surface morphology and piezoelectric properties of BN films are characterized by atomic force microscopy （AFM）. The results show that when the flow ratio of nitrogen and argon is 2：18, the cubic BN （c-BN） film is deposited with high purity and c-axis orientation, and when the flow ratio of nitrogen and argon is 4：20, the hexagonal BN （h-BN） film is deposited with high c-axis orientation. Both particles are uniform and compact, and the roughnesses are 1.5 nm and 2.29 nm, respectively. The h-BN films have better piezoelectric response and distribu- tion than the c-BN films.展开更多
基金supported by the National Natural Science Foundation of China (Nos.50972105 and 60806030)the Tianjin Natural Science Foundation (Nos. 09JCZDJC16500 and 08JCYBJC14600)
文摘Boron nitride （BN） films for high-frequency surface acoustic wave （SAW） devices are deposited on Ti/AI/Si（111） wafers by radio frequency （RF） magnetron sputtering. The structure of BN films is investigated by Fourier transform infrared （FrlR） spectroscopy and X-ray diffraction （XRD） spectra, and the surface morphology and piezoelectric properties of BN films are characterized by atomic force microscopy （AFM）. The results show that when the flow ratio of nitrogen and argon is 2：18, the cubic BN （c-BN） film is deposited with high purity and c-axis orientation, and when the flow ratio of nitrogen and argon is 4：20, the hexagonal BN （h-BN） film is deposited with high c-axis orientation. Both particles are uniform and compact, and the roughnesses are 1.5 nm and 2.29 nm, respectively. The h-BN films have better piezoelectric response and distribu- tion than the c-BN films.
