A stable Q-switched erbium doped fiber laser emitting at 1558 nm is demonstrated using a cadmium selenide（CdSe） material coated onto a side-polished D-shape fiber as the saturable absorber（SA）. By elevating the in...A stable Q-switched erbium doped fiber laser emitting at 1558 nm is demonstrated using a cadmium selenide（CdSe） material coated onto a side-polished D-shape fiber as the saturable absorber（SA）. By elevating the input pump power from the threshold of 91 mW to the maximum available power of 136 mW, a pulse train with a maximum repetition rate of 57.44 kHz, minimum pulse width of 3.76 us, maximum average output power of7.99 mW, maximum pulse energy of 0.1391 uJ, and maximum peak power of 36.99 mW are obtained. The signalto-noise ratio of the spectrum is measured to be around 75 dB. This CdSe based SA is simple, robust, and reliable,and thus suitable for making a portable pulse laser source.展开更多
The tuneable band gap property of Cadmium-sulphur-selenide (CdS1–xSex) thin film makes it an appropriate material for a wide range of optoelec-tronic applications and this has aroused a lot of interest. In this paper...The tuneable band gap property of Cadmium-sulphur-selenide (CdS1–xSex) thin film makes it an appropriate material for a wide range of optoelec-tronic applications and this has aroused a lot of interest. In this paper, we report the study of Cadmium-sulphur-selenide (CdS1–xSex) thin films, successfully grown on commercial glass slide substrate by the chemical bath deposition technique. The effect of selenium content (x value) on the structural, and some optical properties have been studied. The bath solution contained cadmium acetate dehydrate [Cd(CH3COO)2·2H2O], so-dium selenosulphate [Na2SeSO3] and thiourea [CS(NH2)2] were used as the sources of Cd2+, Se2﹣ and S2+, respectively. Tartaric acid (C4H6O6) was used as a complexing agent. The pH of the solution was adjusted to 12 by drop-wise addition of ammonia. The bath temperature was kept at 90°C for a deposition time of 1 hour. Post deposition annealing processes of the thin films were performed in a furnace at a temperature of 400°C for two hours. Both as-deposited and annealed films were characterised by Powder X-Ray Diffraction, Scanning Electron Microscopy, UV-Visible Optical Absorption Spectroscopy and Energy Dispersive X-Ray Analysis. Optical absorption data analysis indicates that direct allowed transitions occur in the films. The band gap of the as-deposited CdS1–xSex decreased linearly from 2.34 eV to 1.48 eV, with increasing selenium content, and in the annealed samples, decreased from 1.84 eV to 1.36 eV. X-ray diffrac-tion measurements revealed, that pure CdS, and CdSe had mixed hexago-nal and cubic phases. All the remaining ternary compounds were com-posed of cubic CdS and hexagonal CdSe phases. The annealed samples showed well defined and more intense peaks, suggesting an improvement in crystallinity. The average grain size increased slightly with increasing selenium content. SEM micrographs showed that the films were compact with a smooth texture and good coverage across the entire area of the substrate.展开更多
We demonstrate the generation of a Q-switching pulse train in an erbium-doped fiber laser （EDFL） cavity using a newly developed cadmium selenide （CdSe） based saturable absorber （SA）. The SA is obtained by embedd...We demonstrate the generation of a Q-switching pulse train in an erbium-doped fiber laser （EDFL） cavity using a newly developed cadmium selenide （CdSe） based saturable absorber （SA）. The SA is obtained by embedding CdSe nanomaterials into a polymethyl methacrylate （PMMA） microfiber. It is incorporated into an EDFL cavity to generate a Q-switched laser operating at 1533.6nm. The repetition rates of the produced pulse train are tunable within 37–64kHz as the pump power is varied from 34mW to 74mW. The corresponding pulse width reduces from 7.96μs to 4.84μs, and the maximum pulse energy of 1.16nJ is obtained at the pump power of 74mW.展开更多
Cadmium selenide(CdSe)is an inorganic semiconductor with unique optical and electronic properties that make it useful in various applications,including solar cells,light-emitting diodes,and biofluorescent tagging.In o...Cadmium selenide(CdSe)is an inorganic semiconductor with unique optical and electronic properties that make it useful in various applications,including solar cells,light-emitting diodes,and biofluorescent tagging.In order to synthesize high-quality crystals and subsequently integrate them into devices,it is crucial to understand the atomic scale crystallization mechanism of CdSe.Unfortunately,such studies are still absent in the literature.To overcome this limitation,we employed an enhanced sampling-accelerated active learning approach to construct a deep neural potential with ab initio accuracy for studying the crystallization of CdSe.Our brute-force molecular dynamics simulations revealed that a spherical-like nu-cleus formed spontaneously and stochastically,resulting in a stacking disordered structure where the competition between hexagonal wurtzite and cubic zinc blende polymorphs is temperature-dependent.We found that pure hexagonal crystal can only be obtained approximately above 1430 K,which is 35 K below its melting temperature.Furthermore,we observed that the solidification dynamics of Cd and Se atoms were distinct due to their different diffusion coefficients.The solidification process was initiated by lower mobile Se atoms forming tetrahedral frameworks,followed by Cd atoms occupying these tetra-hedral centers and settling down until the third-shell neighbor of Se atoms sited on their lattice posi-tions.Therefore,the medium-range ordering of Se atoms governs the crystallization process of CdSe.Our findings indicate that understanding the complex dynamical process is the key to comprehending the crystallization mechanism of compounds like CdSe,and can shed lights in the synthesis of high-quality crystals.展开更多
文摘A stable Q-switched erbium doped fiber laser emitting at 1558 nm is demonstrated using a cadmium selenide（CdSe） material coated onto a side-polished D-shape fiber as the saturable absorber（SA）. By elevating the input pump power from the threshold of 91 mW to the maximum available power of 136 mW, a pulse train with a maximum repetition rate of 57.44 kHz, minimum pulse width of 3.76 us, maximum average output power of7.99 mW, maximum pulse energy of 0.1391 uJ, and maximum peak power of 36.99 mW are obtained. The signalto-noise ratio of the spectrum is measured to be around 75 dB. This CdSe based SA is simple, robust, and reliable,and thus suitable for making a portable pulse laser source.
文摘The tuneable band gap property of Cadmium-sulphur-selenide (CdS1–xSex) thin film makes it an appropriate material for a wide range of optoelec-tronic applications and this has aroused a lot of interest. In this paper, we report the study of Cadmium-sulphur-selenide (CdS1–xSex) thin films, successfully grown on commercial glass slide substrate by the chemical bath deposition technique. The effect of selenium content (x value) on the structural, and some optical properties have been studied. The bath solution contained cadmium acetate dehydrate [Cd(CH3COO)2·2H2O], so-dium selenosulphate [Na2SeSO3] and thiourea [CS(NH2)2] were used as the sources of Cd2+, Se2﹣ and S2+, respectively. Tartaric acid (C4H6O6) was used as a complexing agent. The pH of the solution was adjusted to 12 by drop-wise addition of ammonia. The bath temperature was kept at 90°C for a deposition time of 1 hour. Post deposition annealing processes of the thin films were performed in a furnace at a temperature of 400°C for two hours. Both as-deposited and annealed films were characterised by Powder X-Ray Diffraction, Scanning Electron Microscopy, UV-Visible Optical Absorption Spectroscopy and Energy Dispersive X-Ray Analysis. Optical absorption data analysis indicates that direct allowed transitions occur in the films. The band gap of the as-deposited CdS1–xSex decreased linearly from 2.34 eV to 1.48 eV, with increasing selenium content, and in the annealed samples, decreased from 1.84 eV to 1.36 eV. X-ray diffrac-tion measurements revealed, that pure CdS, and CdSe had mixed hexago-nal and cubic phases. All the remaining ternary compounds were com-posed of cubic CdS and hexagonal CdSe phases. The annealed samples showed well defined and more intense peaks, suggesting an improvement in crystallinity. The average grain size increased slightly with increasing selenium content. SEM micrographs showed that the films were compact with a smooth texture and good coverage across the entire area of the substrate.
文摘We demonstrate the generation of a Q-switching pulse train in an erbium-doped fiber laser （EDFL） cavity using a newly developed cadmium selenide （CdSe） based saturable absorber （SA）. The SA is obtained by embedding CdSe nanomaterials into a polymethyl methacrylate （PMMA） microfiber. It is incorporated into an EDFL cavity to generate a Q-switched laser operating at 1533.6nm. The repetition rates of the produced pulse train are tunable within 37–64kHz as the pump power is varied from 34mW to 74mW. The corresponding pulse width reduces from 7.96μs to 4.84μs, and the maximum pulse energy of 1.16nJ is obtained at the pump power of 74mW.
基金supported by the National Natural Science Foundation of China(50972060)Nanjing University of Science&Technology Research Funding,China(2010ZDJH06)Jiangsu Applied Chemistry and Materials Graduate Center for Innovation and Academic Communication Foundation,China(2010ACMC07)~~
基金supported by the National Natural Science Foundation of China(No.92370118)the National Science Fund for Excellent Young Scientist Fund Program(Overseas)of China,the Science and Technology Activities Fund for Overseas Researchers of Shaanxi Province,China,and the Research Fund of the State Key Laboratory of Solidification Proceeding(NPU)of China(No.2020-QZ-03).
文摘Cadmium selenide(CdSe)is an inorganic semiconductor with unique optical and electronic properties that make it useful in various applications,including solar cells,light-emitting diodes,and biofluorescent tagging.In order to synthesize high-quality crystals and subsequently integrate them into devices,it is crucial to understand the atomic scale crystallization mechanism of CdSe.Unfortunately,such studies are still absent in the literature.To overcome this limitation,we employed an enhanced sampling-accelerated active learning approach to construct a deep neural potential with ab initio accuracy for studying the crystallization of CdSe.Our brute-force molecular dynamics simulations revealed that a spherical-like nu-cleus formed spontaneously and stochastically,resulting in a stacking disordered structure where the competition between hexagonal wurtzite and cubic zinc blende polymorphs is temperature-dependent.We found that pure hexagonal crystal can only be obtained approximately above 1430 K,which is 35 K below its melting temperature.Furthermore,we observed that the solidification dynamics of Cd and Se atoms were distinct due to their different diffusion coefficients.The solidification process was initiated by lower mobile Se atoms forming tetrahedral frameworks,followed by Cd atoms occupying these tetra-hedral centers and settling down until the third-shell neighbor of Se atoms sited on their lattice posi-tions.Therefore,the medium-range ordering of Se atoms governs the crystallization process of CdSe.Our findings indicate that understanding the complex dynamical process is the key to comprehending the crystallization mechanism of compounds like CdSe,and can shed lights in the synthesis of high-quality crystals.
