Multi-band polarization switch based on magnetic fluid filled dual-core photonic crystal fiber

The research of high-performance polarization controllers is of great significance for expanding the application field of polarization optics. Here, a polarization switch is demonstrated by using a dual-core photonic crystal fiber(DCPCF)with four symmetrical air holes, placed above and below each core, filled with magnetic fluid(MF). The switch, which utilizes a magnetic field to change the coupling length ratio of the x and y polarization modes, enables dynamic tuning of the polarization state and extinction ratio. Numerical results show that when the working length is 36.638 mm, the magneto–optical polarization switch can operate in four communication bands, i.e., 1509 nm to 1520 nm, 1544 nm to1556 nm, 1578 nm to 1591 nm, and 1611 nm to 1624 nm. Moreover, the extinction ratio(ER) is greater than 20 d B in the fiber length range of 38.5 mm to 38.7 mm, indicating that the device has a good fault tolerance for the interception of the fiber length.

A 2×3 Photonic Switch in SiGe for 1.55μm Operation

A silicon-based photonic switch is proposed and simulated based on the multimode interference （MMI） principle and the free-carrier plasma dispersion effect in silicon-germanium. The proposed switch, designed for 1.55μm window operation,is useful for DWDM optical networks. The switch consists of two input single-mode ridge waveguide ports,a MMI section, and three output single-mode ridge waveguide ports. In the MMI section, two index-modulation regions are placed to divert input optical signals from the two input ports to each of the three output ports. Switching characteristics are demonstrated theoretically by a beam propagation method for 1.55μm operation. The simulated results show that the insertion loss of the switch is less than 1.43dB, and the crosstalk is between - 18 and - 32.8dB.

Fabrication of high-quality colloidal photonic crystals with sharp band edges for ultrafast all-optical switching

Application of the pressure controlled isothermal heating vertical deposition method to the fabrication of colloidal photonic crystals is systematically investigated in this paper. The fabricated samples are characterized by scanning electron microscope and transmission spectrum. High-quality samples with large transmissions in the pass bands and the sharp band edges are obtained and the optimum growth condition is determined. For the best sample, the transmission in the pass bands approaches 0.9 while that in the band gap reaches 0.1. More importantly, the maximum differential transmission as high as 0.1/nm is achieved. In addition, it is found that the number of stacking layers does not increase linearly with concentration of PS spheres in a solution, and a gradual saturation occurs when the concentration of PS spheres exceeds 1.5 wt.%. The uniformity of the fabricated samples is examined by transmission measurements on areas with different sizes. Finally, the tolerance of the fabricated samples to baking was studied.

A new Structure of Optical Buffer and 2×622MB/S ATM Photonic Switching System

A new structure of optical buffer for resolving ATM cell contention is presented in this paper. It is composed of fiber delay lines, optical waveguide switching array and nonlinear semiconductor optical amplifier. Also, an experimental system for switching ATM cells formed by data at different transmission rates (up to 622MB/s) from different users is reported. The throughput of this system is 1.2Gb/s.

Microwave Photonics for Modern Radar Systems

The emerging new concepts and technologies based on microwave photonics have led to an ever-increasing interest in developing innovative radar systems with a net gain in functionality,bandwidth /resolution,size,mass,complexity and cost when compared with the traditional implementations. This paper describes the techniques developed in the last few years in microwave photonics that might revolutionize the way to design multifunction radar systems,with an emphasis on the recent advances in optoelectronic oscillators( OEOs),arbitrary waveform generation,photonic mixing,phase coding,filtering,beamforming,analog-to-digital conversion,and stable radio-frequency signal transfer. Challenges in implementation of these components and subsystems for meeting the technique requirements of the multifunction radar applications are discussed.

High performance integrated photonic circuit based on inverse design method

The basic indexes of all-optical integrated photonic circuits include high-density integration,ultrafast response and ultralow energy consumption.Traditional methods mainly adopt conventional micro/nano-structures.The overall size of the circuit is large,usually reaches hundreds of microns.Besides,it is difficult to balance the ultrafast response and ultra-low energy consumption problem,and the crosstalk between two traditional devices is difficult to overcome.Here,we propose and experimentally demonstrate an approach based on inverse design method to realize a high-density,ultrafast and ultra-low energy consumption integrated photonic circuit with two all-optical switches controlling the input states of an all-optical XOR logic gate.The feature size of the whole circuit is only 2.5μm×7μm,and that of a single device is 2μm×2μm.The distance between two adjacent devices is as small as 1.5μm,within wavelength magnitude scale.Theoretical response time of the circuit is 150 fs,and the threshold energy is within 10 fJ/bit.We have also considered the crosstalk problem.The circuit also realizes a function of identifying two-digit logic signal results.Our work provides a new idea for the design of ultrafast,ultra-low energy consumption all-optical devices and the implementation of high-density photonic integrated circuits.

Silicon photonics for telecom and data‐com applications

In recent decades,silicon photonics has attracted much attention in telecom and data-com areas.Constituted of high refractive-index contrast waveguides on silicon-on-insulator(SOI),a variety of integrated photonic passive and active devices have been implemented supported by excellent optical properties of silicon in the mid-infrared spectrum.The main advantage of the silicon photonics is the ability to use complementary metal oxide semiconductor(CMOS)process-compatible fabrication technologies,resulting in high-volume production at low cost.On the other hand,explosively growing traffic in the telecom,data center and high-performance computer demands the data flow to have high speed,wide bandwidth,low cost,and high energy-efficiency,as well as the photonics and electronics to be integrated for ultra-fast data transfer in networks.In practical applications,silicon photonics started with optical interconnect transceivers in the data-com first,and has been now extended to innovative applications such as multi-port optical switches in the telecom network node and integrated optical phased arrays(OPAs)in light detection and ranging(LiDAR).This paper overviews the progresses of silicon photonics from four points reflecting the recent advances mentioned above.CMOS-based silicon photonic platform technologies,applications to optical transceiver in the data-com network,applications to multi-port optical switches in the telecom network and applications to OPA in LiDAR system.

Optical diode behavior of photonic crystal structure with asymmetric Kerr defect

Optical diode behavior of asymmetric one-dimensional photonic crystal with Kerr defect is numerically investigated using nonlinear transfer matrix method. In the linear case, the intensity and the phase of transmitted field are the same for the forward and backward operations. In the nonlinear case, however, the transmitted intensities are much different for the two operations, which display diode characteristic. Physical origin of the anisotropic transmission lies in the different localizations in the defect layer of the two operations.

Strict non-blocking four-port optical router for mesh photonic network-on-chip

We report a strict non-blocking four-port optical router that is used for a mesh photonic network-on-chip on a silicon-on-insulator platform.The router consists of eight silicon microring switches that are tuned by the thermo-optic effect.For each tested rousting state,the signal-to-noise ratio of the optical router is larger than 13.8 dB at the working wavelength.The routing functionality of the device is verified.We perform 40 Gbps nonreturn to zero code data transmission on its 12 optical links.Meanwhile,data transmission using wavelength division multiplexing on eight channels in the C band(from 1525 to 1565 nm)has been adopted to increase the communication capacity.The optical router’s average energy efficiency is 25.52 fJ/bit.The rising times(10%to 90%)of the eight optical switch elements are less than 10μs and the falling times(90%-10%)are less than 20μs.

硅基集成光开关阵列的高速驱动控制电路设计

通过分析光开关单元的物理结构,提出等效电学模型,用于模拟光开关单元的瞬态响应.基于该模型,针对光开关阵列设计高速驱动控制电路,结合仿真探究电压尖峰对光开关单元瞬态响应的影响.系统测试结果表明,驱动电路施加的电压信号的上升/下降时间为1.7/1.6 ns,能够满足高速光开关纳秒级切换速度的需求.在该驱动电路的配合下,光开关阵列的切换时间为2.1~5.9 ns,实现了较先进的高速光交换系统.

可重构微波光子多波束形成技术研究

在微波光子多波束形成系统中,为了实现多路射频信号与多个波束间的重构,提出了基于光真延迟和光交换阵列的可重构多波束形成技术方案,其中包括电光转换、光交换阵列、多波束分光阵列、固定光延迟阵列以及光电转换等部分。理论分析了该方案的工作原理和重构机制,建立了仿真模拟实验系统,并验证了基于4端口Benes网络的4路射频信号与固定4波束间重构的性能,得到了多种重构状态下的波束方向图。结果表明,该方案相比基于可变光真延迟的方案减少了约2个数量级的光开关使用数量,降低了系统的成本和控制复杂度,实现了4路射频信号和4波束之间的重构。该研究结果为多波束形成技术的应用提供了一种新的途径。

Photon-photon interactions with inner coupled double-cavity

This paper describes the interaction between two spatial modes of the optical fields with a single atom trapped inner coupled double-cavity. Theoretical derivation and numerical simulation with the experimental available parameters show that photon-photon switching and π phase shift of single photons may be achieved with current experimental technology. As the probe and control fields are in different spatial modes, the system is superior for implementing cavity QED-based photonic quantum networks.

GaAs光电导开关非线性模式的雪崩畴输运机理

光电导开关非线性模式的产生机理研究是该领域热点问题之一.本文采用波长1064 nm、脉宽5 ns的激光脉冲触发半绝缘GaAs光电导开关,在触发光能1 mJ、偏置电压2750 V时获得稳定的非线性波形.基于双光子吸收模型,计算了开关体内光生载流子浓度,计算结果表明光生载流子弥补了材料本征载流子的不足,在开关体内形成由光生载流子参与的电荷畴.依据转移电子效应原理,对畴内的峰值电场进行了计算,结果表明高浓度载流子可使畴内峰值电场远高于材料的本征击穿场强,致使畴内发生强烈的雪崩电离.基于光激发雪崩畴模型,对非线性模式的典型实验规律进行了解释,理论与实验一致.基于漂移扩散模型和负微分电导率效应,对触发瞬态开关体内电场进行仿真,结果表明开关体内存在有峰值电场达GaAs本征击穿场强的多畴输运现象.该研究为非线性光电导开关的产生机理及光激发电荷畴理论的完善提供实验依据和理论支撑.

Compact, submilliwatt, 2 × 2 silicon thermo-optic switch based on photonic crystal nanobeam cavities

We propose and experimentally demonstrate a 2×2 thermo-optic(TO) crossbar switch implemented by dual photonic crystal nanobeam(PCN)cavities within a silicon-on-insulator(SOI)platform.By thermally tuning the refractive index of silicon,the resonance wavelength of the PCN cavities can be red-shifted.With the help of the ultrasmall mode volumes of the PCN cavities,only～0.16 mW power is needed to change the switching state.With a spectral passband of 0.09 nm at the 1583.75 nm operation wavelength,the insertion loss(IL)and crosstalk(CT)performances were measured as IL(bar)=-0.2 dB,CT(bar)=-15 dB,IL(cross)=-1.5 dB,and CT(cross)=-15 dB.Furthermore,the thermal tuning efficiency of the fabricated device is as high as1.23 nm/mW.

Modular architecture for fully non-blocking silicon photonic switch fabric

Integrated photonics offers the possibility of compact,low energy,bandwidth-dense interconnects for large port count spatial optical switches,facilitating flexible and energy efficient data movement in future data communications systems.To achieve widespread adoption,intimate integration with electronics has to be possible,requiring switch design using standard microelectronic foundry processes and available devices.We report on the feasibility of a switch fabric comprised of ubiquitous silicon photonic building blocks,opening the possibility to combine technologies,and materials towards a new path for switch fabric design.Rather than focus on integrating all devices on a single silicon chip die to achieve large port count optical switching,this work shifts the focus towards innovative packaging and integration schemes.In this work,we demonstrate 1×8 and 8×1 microring-based silicon photonic switch building blocks with software control,providing the feasibility of a full 8×8 architecture composed of silicon photonic building blocks.The proposed switch is fully non-blocking,has path-independent insertion loss,low crosstalk,and is straightforward to control.We further analyze this architecture and compare it with other common switching architectures for varying underlying technologies and radices,showing that the proposed architecture favorably scales to very large port counts when considering both crosstalk and architectural footprint.Separating a switch fabric into functional building blocks via multiple photonic integrated circuits offers the advantage of piece-wise manufacturing,packaging,and assembly,potentially reducing the number of optical I/O and electrical contacts on a single die.

On-chip silicon photonic 2 × 2 mode-and polarization-selective switch with low inter-modal crosstalk

Mode-and polarization-division multiplexing offer new dimensions to increase the transmission capacity of optical communications. Selective switches are key components in reconfigurable optical network nodes. An on-chip silicon 2 × 2 mode-and polarization-selective switch that can route four data channels on two modes and two polarizations simultaneously is proposed and experimentally demonstrated for the first time, to the best of our knowledge. The overall insertion losses are lower than 8.6 d B. To reduce the inter-modal crosstalk, polarization beam splitters are added to filter the undesired polarizations or modes. The measured inter-modal andintra-modal crosstalk values are below-23.2 and-22.8 d B for all the channels, respectively.

All-optical switching in silicon photonic waveguides with an epsilon-near-zero resonant cavity [Invited]

Strong nonlinearity of plasmonic metamaterials can be designed near their effective plasma frequency in the epsilon-near-zero(ENZ) regime. We explore the realization of an all-optical modulator based on the Au nonlinearity using an ENZ cavity formed by a few Au nanorods inside a Si photonic waveguide. The resulting modulator has robust performance with a modulation depth of about 30 dB/μm and loss less than 0.8 dB for switching energies below 600 fJ. The modulator provides a double advantage of high mode transmission and strong nonlinearity enhancement in the few-nanorod-based design.

Switching response of dual-output Mach–Zehnder modulator in channel-interleaved photonic analog-to-digital converter

This Letter theoretically and experimentally studies the response of photonic switching in a channel-interleaved photonic analog-to-digital converter(PADC) with high sampling rate and wide input frequency range. A figure of merit(FoM) is introduced to evaluate the switching response of the PADC when a dual-output Mach–Zehnder modulator(MZM) serves as the photonic switch to parallelize the sampled pulse train into two channels. After the optimization of the FoM and utilization of the channel-mismatch compensation algorithm,the system bandwidth of PADC is expanded and the signal-to-distortion ratio is enhanced.

光开关切换延时线自动标定与控制系统

光开关切换延时线芯片中各光开关的驱动电压标定和控制需使用多通道光功率计、可编程多通道电压源阵列等分立仪器,存在成本高、扩展困难的问题。设计并制作了一套低成本、易扩展的光开关切换延时线自动标定与控制系统,其中多通道光功率计模块可探测-53~-7.7 dBm内的光功率,误差小于0.5 dB;多通道电压输出模块可高精度稳定输出0~10 V的直流电压,输出电压波动小于±0.5 mV;使用单片机控制各模块协同工作并连接上位机实现人机交互。使用本系统对5-bit光开关切换延时线进行了自动标定和控制,结果显示,在32级延时状态下,延时线芯片输出端的透射光谱在1560 nm波长附近的波动均小于1 dB,对应的延时步进为3.1109 ps/state。该结果与商用仪器标定电压下测得的3.0620 ps/state的延时步进高度吻合。本文设计制作的标定与控制系统精度高、成本低、扩展性强,具有很高的应用价值。

非简并双光子吸收及其应用研究进展

非简并双光子吸收是两个能量不同的光子同时被介质吸收,产生一次电子从基态经过一个中间虚态向激发态跃迁的非线性光学效应.非简并双光子吸收与简并双光子吸收相比,由于中间态共振效应,吸收系数得到了几十倍甚至几百倍的增大,因此在多个非线性光学应用中具有极大的潜力.本文首先介绍双光子吸收的基本原理,解释了非简并双光子吸收的增强机制;然后详细介绍双光子吸收的基本测量方法;接着综述三维半导体材料、有机荧光分子、二维材料与量子点的非简并双光子吸收相关研究;最后重点总结了其在红外探测与成像、双光子荧光显微成像、全光开关与光调制等领域的应用进展,并对领域领域的未来发展进行了展望.