An organics/metal Schottky diode is fabricated using 3, 4： 9, 10-perylenetetracarboxylic- dianhydride（PTCDA） thin film sandwiched between ITO and Au by simple thermal evaporation technique. The current-voltage（I-V...An organics/metal Schottky diode is fabricated using 3, 4： 9, 10-perylenetetracarboxylic- dianhydride（PTCDA） thin film sandwiched between ITO and Au by simple thermal evaporation technique. The current-voltage（I-V） characteristics are investigated at room temperature in open air. The results show the rectification ratio is in excess of 100. From the capacitance-frequency（C-f） and capacitance-voltage（C-V） measurements, the Schottky barrier height between 0.2-0.3 eV is obtained according to standard Schottky theory.展开更多
Thin films comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous-carbon(UNCD/a-C:H)composite films were experimentally investigated.The prepared films were grown on Si substrates by the coaxial...Thin films comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous-carbon(UNCD/a-C:H)composite films were experimentally investigated.The prepared films were grown on Si substrates by the coaxial arc plasma deposition method.They were characterized by temperature-dependent capacitance-frequency measurements in the temperature and frequency ranges of 300-400 K and 50 kHz-2 MHz,respectively.The energy distribution of trap density of states in the films was extracted using a simple technique utilizing the measured capacitance-frequency characteristics.In the measured temperature range,the energy-distributed traps exhibited Gaussian-distributed states with peak values lie in the range:2.84×10^(16)-2.73×10^(17)eV^(-1)cm^(-3)and centered at energies of 120-233 meV below the conduction band.These states are generated due to a large amount of sp^(2)-C andπ-bond states,localized in GBs of the UNCD/a-C:H film.The attained defect parameters are accommodating to understand basic electrical properties of UNCD/a-C:H composite and can be adopted to suppress defects in the UNCD-based materials.展开更多
To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 ? which is measured optically....To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 ? which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to –5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.展开更多
基金National"973"Foundation of China(2005CB724501) Recreating Foundation of National Defence for ChineseAcademy of Sciences(CXJJ -145)
文摘An organics/metal Schottky diode is fabricated using 3, 4： 9, 10-perylenetetracarboxylic- dianhydride（PTCDA） thin film sandwiched between ITO and Au by simple thermal evaporation technique. The current-voltage（I-V） characteristics are investigated at room temperature in open air. The results show the rectification ratio is in excess of 100. From the capacitance-frequency（C-f） and capacitance-voltage（C-V） measurements, the Schottky barrier height between 0.2-0.3 eV is obtained according to standard Schottky theory.
文摘Thin films comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous-carbon(UNCD/a-C:H)composite films were experimentally investigated.The prepared films were grown on Si substrates by the coaxial arc plasma deposition method.They were characterized by temperature-dependent capacitance-frequency measurements in the temperature and frequency ranges of 300-400 K and 50 kHz-2 MHz,respectively.The energy distribution of trap density of states in the films was extracted using a simple technique utilizing the measured capacitance-frequency characteristics.In the measured temperature range,the energy-distributed traps exhibited Gaussian-distributed states with peak values lie in the range:2.84×10^(16)-2.73×10^(17)eV^(-1)cm^(-3)and centered at energies of 120-233 meV below the conduction band.These states are generated due to a large amount of sp^(2)-C andπ-bond states,localized in GBs of the UNCD/a-C:H film.The attained defect parameters are accommodating to understand basic electrical properties of UNCD/a-C:H composite and can be adopted to suppress defects in the UNCD-based materials.
文摘To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 ? which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to –5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.
