随着基于电压源型换流器的柔性直流输电(voltage source converter based high voltage direct current,VSC-HVDC)技术的快速发展,十几年间世界范围内已建成数十个各种不同电压等级的VSC-HVDC工程。根据交流电网的发展历史,未来构建大...随着基于电压源型换流器的柔性直流输电(voltage source converter based high voltage direct current,VSC-HVDC)技术的快速发展,十几年间世界范围内已建成数十个各种不同电压等级的VSC-HVDC工程。根据交流电网的发展历史,未来构建大规模直流电网是必然趋势。然而直流电网必须采用DC/DC变换器来充当直流变压器的角色,因此高效率、低成本的高压大容量DC/DC变换器是直流电网技术中亟待攻克的关键基础性课题。该文针对不同电压等级直流输电线路互联的技术需求,对经典低压DC/DC拓扑进行改造,推演出一系列基于容性能量转移原理的高压大容量DC/DC变换器拓扑,并揭示此类拓扑的演化规律和换流原理。相比传统变换器方案,该拓扑可降低器件数量,提升拓扑转换效率以及减小变换器体积重量。最后,通过仿真和实验验证基于容性能量转移原理的DC/DC变换器的可行性。展开更多
A split gate MOSFET(SG-MOSFET)is widely known for reducing the reverse transfer capacitance(C_(RSS)).In a 3.3 kV class,the SG-MOSFET does not provide reliable operation due to the high gate oxide electric field.In add...A split gate MOSFET(SG-MOSFET)is widely known for reducing the reverse transfer capacitance(C_(RSS)).In a 3.3 kV class,the SG-MOSFET does not provide reliable operation due to the high gate oxide electric field.In addition to the poor static performance,the SG-MOSFET has issues such as the punch through and drain-induced barrier lowering(DIBL)caused by the high gate oxide electric field.As such,a 3.3 kV 4 H-SiC split gate MOSFET with a grounded central implant region(SG-CIMOSFET)is proposed to resolve these issues and for achieving a superior trade-off between the static and switching performance.The SG-CIMOSFET has a significantly low on-resistance(R_(ON))and maximum gate oxide field(E_(OX))due to the central implant region.A grounded central implant region significantly reduces the C_(RSS)and gate drain charge(Q_(GD))by partially screening the gate-to-drain capacitive coupling.Compared to a planar MOSFET,the SG MOSFET,central implant MOSFET(CIMOSFET),the SGCIMOSFET improve the R_(ON)×Q_(GD)by 83.7%,72.4%and 44.5%,respectively.The results show that the device features not only the smallest switching energy loss but also the fastest switching time.展开更多
文摘随着基于电压源型换流器的柔性直流输电(voltage source converter based high voltage direct current,VSC-HVDC)技术的快速发展,十几年间世界范围内已建成数十个各种不同电压等级的VSC-HVDC工程。根据交流电网的发展历史,未来构建大规模直流电网是必然趋势。然而直流电网必须采用DC/DC变换器来充当直流变压器的角色,因此高效率、低成本的高压大容量DC/DC变换器是直流电网技术中亟待攻克的关键基础性课题。该文针对不同电压等级直流输电线路互联的技术需求,对经典低压DC/DC拓扑进行改造,推演出一系列基于容性能量转移原理的高压大容量DC/DC变换器拓扑,并揭示此类拓扑的演化规律和换流原理。相比传统变换器方案,该拓扑可降低器件数量,提升拓扑转换效率以及减小变换器体积重量。最后,通过仿真和实验验证基于容性能量转移原理的DC/DC变换器的可行性。
基金supported by the MSIT(Ministry of Science and ICT),Korea,under the ITRC(Information Technology Research Center)support program(IITP-2020-2018-0-01421)supervised by the IITP(Institute for Information&communications Technology Promotion)then Samsung Electronics.
文摘A split gate MOSFET(SG-MOSFET)is widely known for reducing the reverse transfer capacitance(C_(RSS)).In a 3.3 kV class,the SG-MOSFET does not provide reliable operation due to the high gate oxide electric field.In addition to the poor static performance,the SG-MOSFET has issues such as the punch through and drain-induced barrier lowering(DIBL)caused by the high gate oxide electric field.As such,a 3.3 kV 4 H-SiC split gate MOSFET with a grounded central implant region(SG-CIMOSFET)is proposed to resolve these issues and for achieving a superior trade-off between the static and switching performance.The SG-CIMOSFET has a significantly low on-resistance(R_(ON))and maximum gate oxide field(E_(OX))due to the central implant region.A grounded central implant region significantly reduces the C_(RSS)and gate drain charge(Q_(GD))by partially screening the gate-to-drain capacitive coupling.Compared to a planar MOSFET,the SG MOSFET,central implant MOSFET(CIMOSFET),the SGCIMOSFET improve the R_(ON)×Q_(GD)by 83.7%,72.4%and 44.5%,respectively.The results show that the device features not only the smallest switching energy loss but also the fastest switching time.
