Field emission properties of zinc oxide （ZnO） nanoparticles （NPs） decorated carbon nanotubes （CNTs） are investigated experimentally and theoretically. CNTs are in situ decorated with ZnO NPs during the growth pr...Field emission properties of zinc oxide （ZnO） nanoparticles （NPs） decorated carbon nanotubes （CNTs） are investigated experimentally and theoretically. CNTs are in situ decorated with ZnO NPs during the growth process by chemical vapor deposition using a carbon source from the iron phthalocyanine pyrolysis. The experimental field emission test shows that the ZnO NP decoration significantly improves the emission current from 50 μA to 275 μA at 550 V and the reduced threshold voltage from 450 V to 350 V. The field emission mechanism of ZnO NPs on CNTs is theoretically studied by the density functional theory （DFT） combined with the Penn-Plummer method. The ZnO NPs reconstruct the ZnO-CNT structure and pull down the surface barrier of the entire emitter system to 0.49 eV so as to reduce the threshold electric field. The simulation results suggest that the presence of ZnO NPs would increase the LDOS near the Fermi level and increase the emission current. The calculation results are consistent with the experiment results.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.91123018,61172040,and 61172041)the Natural Science Foundation of Shaanxi Province,China(Grant No.2014JM7277)
文摘Field emission properties of zinc oxide （ZnO） nanoparticles （NPs） decorated carbon nanotubes （CNTs） are investigated experimentally and theoretically. CNTs are in situ decorated with ZnO NPs during the growth process by chemical vapor deposition using a carbon source from the iron phthalocyanine pyrolysis. The experimental field emission test shows that the ZnO NP decoration significantly improves the emission current from 50 μA to 275 μA at 550 V and the reduced threshold voltage from 450 V to 350 V. The field emission mechanism of ZnO NPs on CNTs is theoretically studied by the density functional theory （DFT） combined with the Penn-Plummer method. The ZnO NPs reconstruct the ZnO-CNT structure and pull down the surface barrier of the entire emitter system to 0.49 eV so as to reduce the threshold electric field. The simulation results suggest that the presence of ZnO NPs would increase the LDOS near the Fermi level and increase the emission current. The calculation results are consistent with the experiment results.
