源在外延片直径方向上的耗尽导致了外延片上局部各点的生长速率及掺杂浓度是个随位置变化的量,因此造成了外延片厚度及浓度的不均匀性。通过引入基座气浮旋转可以有效降低这种不均匀性,在典型工艺条件下,采用基座旋转,76.2 mm 4H-SiC外...源在外延片直径方向上的耗尽导致了外延片上局部各点的生长速率及掺杂浓度是个随位置变化的量,因此造成了外延片厚度及浓度的不均匀性。通过引入基座气浮旋转可以有效降低这种不均匀性,在典型工艺条件下,采用基座旋转,76.2 mm 4H-SiC外延片厚度不均匀性、p型掺杂浓度不均匀性和n型掺杂不均匀性分别为0.21%、1.13%和6.96%。基座旋转并不能完全消除外延片n型掺杂浓度不均匀性。优化主氢流量及C/Si比能够改变掺杂源的耗尽曲线,将76.2 mm SiC外延片n型掺浓度不均匀性优化至2.096%(σ/mean)。展开更多
The selection of milling tools for Si C14Cu4Mg0.5Si based on Aluminium matrix 2A14 was analyzed, and the factors that affect the efficiency of the milling were discussed. The Si C14Cu4Mg0.5Si was designed for use on t...The selection of milling tools for Si C14Cu4Mg0.5Si based on Aluminium matrix 2A14 was analyzed, and the factors that affect the efficiency of the milling were discussed. The Si C14Cu4Mg0.5Si was designed for use on the moon landing vehicle or missile wings, but the hardness of aluminium-silicon carbide composite material was very high, much higher than the general hardness of cemented carbide, which will bring many difficulties in the aluminium-silicon carbide composite material processing. The chemical compositions of Si C14Cu4Mg0.5Si were analyzed. A new selected indexable cutter was designed to mill Si C14Cu4Mg0.5Si. The structure design of milling cutter was different from the conventional milling cutter, breaking the previous limitations to a certain extent, pioneering the idea. The tool material wear was detected by experiments. The mechanical and physical properties of Si C14Cu4Mg0.5Si were also tested. Si C14Cu4Mg0.5Si exhibited different surface quality characteristics under different milling tools.展开更多
In order to obtain higher conversion efficiency and to reduce production cost for hydrogenated amorphous silicon/crystalline silicon(a-Si:H/c-Si) based heterojunction solar cells, an a-Si:H/c-Si heterojunction with lo...In order to obtain higher conversion efficiency and to reduce production cost for hydrogenated amorphous silicon/crystalline silicon(a-Si:H/c-Si) based heterojunction solar cells, an a-Si:H/c-Si heterojunction with localized p–n structure(HACL) is designed. A numerical simulation is performed with the ATLAS program. The effect of the a-Si:H layer on the performance of the HIT(heterojunction with intrinsic thin film) solar cell is investigated. The performance improvement mechanism for the HACL cell is explored. The potential performance of the HACL solar cell is compared with those of the HIT and HACD(heterojunction of amorphous silicon and crystalline silicon with diffused junction) solar cells.The simulated results indicate that the a-Si:H layer can bring about much absorption loss. The conversion efficiency and the short-circuit current density of the HACL cell can reach 28.18% and 43.06 m A/cm^2, respectively, and are higher than those of the HIT and HACD solar cells. The great improvement are attributed to(1) decrease of optical absorption loss of a-Si:H and(2) decrease of photocarrier recombination for the HACL cell. The double-side local junction is very suitable for the bifacial solar cells. For an HACL cell with n-type or p-type c-Si base, all n-type or p-type c-Si passivating layers are feasible for convenience of the double-side diffusion process. Moreover, the HACL structure can reduce the consumption of rare materials since the transparent conductive oxide(TCO) can be free in this structure. It is concluded that the HACL solar cell is a promising structure for high efficiency and low cost.展开更多
文摘源在外延片直径方向上的耗尽导致了外延片上局部各点的生长速率及掺杂浓度是个随位置变化的量,因此造成了外延片厚度及浓度的不均匀性。通过引入基座气浮旋转可以有效降低这种不均匀性,在典型工艺条件下,采用基座旋转,76.2 mm 4H-SiC外延片厚度不均匀性、p型掺杂浓度不均匀性和n型掺杂不均匀性分别为0.21%、1.13%和6.96%。基座旋转并不能完全消除外延片n型掺杂浓度不均匀性。优化主氢流量及C/Si比能够改变掺杂源的耗尽曲线,将76.2 mm SiC外延片n型掺浓度不均匀性优化至2.096%(σ/mean)。
基金Funded by the National Natural Science Foundation of China(Nos.51275490,and 51475346)Specialized Research Fund for the Doctoral Program of Higher Education of China(20131420120002)Shanxi Province Science Foundation(2013011025-1)
文摘The selection of milling tools for Si C14Cu4Mg0.5Si based on Aluminium matrix 2A14 was analyzed, and the factors that affect the efficiency of the milling were discussed. The Si C14Cu4Mg0.5Si was designed for use on the moon landing vehicle or missile wings, but the hardness of aluminium-silicon carbide composite material was very high, much higher than the general hardness of cemented carbide, which will bring many difficulties in the aluminium-silicon carbide composite material processing. The chemical compositions of Si C14Cu4Mg0.5Si were analyzed. A new selected indexable cutter was designed to mill Si C14Cu4Mg0.5Si. The structure design of milling cutter was different from the conventional milling cutter, breaking the previous limitations to a certain extent, pioneering the idea. The tool material wear was detected by experiments. The mechanical and physical properties of Si C14Cu4Mg0.5Si were also tested. Si C14Cu4Mg0.5Si exhibited different surface quality characteristics under different milling tools.
基金Project supported by the National Key R&D Program of China(Grant No.2018YFB1500403)the National Natural Science Foundation of China(Grant Nos.11964018,61741404,and 61464007)the Natural Science Foundation of Jiangxi Province of China(Grant No.20181BAB202027)
文摘In order to obtain higher conversion efficiency and to reduce production cost for hydrogenated amorphous silicon/crystalline silicon(a-Si:H/c-Si) based heterojunction solar cells, an a-Si:H/c-Si heterojunction with localized p–n structure(HACL) is designed. A numerical simulation is performed with the ATLAS program. The effect of the a-Si:H layer on the performance of the HIT(heterojunction with intrinsic thin film) solar cell is investigated. The performance improvement mechanism for the HACL cell is explored. The potential performance of the HACL solar cell is compared with those of the HIT and HACD(heterojunction of amorphous silicon and crystalline silicon with diffused junction) solar cells.The simulated results indicate that the a-Si:H layer can bring about much absorption loss. The conversion efficiency and the short-circuit current density of the HACL cell can reach 28.18% and 43.06 m A/cm^2, respectively, and are higher than those of the HIT and HACD solar cells. The great improvement are attributed to(1) decrease of optical absorption loss of a-Si:H and(2) decrease of photocarrier recombination for the HACL cell. The double-side local junction is very suitable for the bifacial solar cells. For an HACL cell with n-type or p-type c-Si base, all n-type or p-type c-Si passivating layers are feasible for convenience of the double-side diffusion process. Moreover, the HACL structure can reduce the consumption of rare materials since the transparent conductive oxide(TCO) can be free in this structure. It is concluded that the HACL solar cell is a promising structure for high efficiency and low cost.
