Based on simple analytical equations, short circuit current density （Jsc） of the organic bulk heterojunction solar cells has been calculated. It is found that the optical interference effect plays a very important r...Based on simple analytical equations, short circuit current density （Jsc） of the organic bulk heterojunction solar cells has been calculated. It is found that the optical interference effect plays a very important role in the determination of Jsc; and obvious oscillatory behaviour of Jsc was observed as a function of thickness. At the same time, the influence of the carrier lifetime on Jsc also cannot be neglected. When the carrier lifetime is relatively short, Jsc only increases at the initial stage and then decreases rapidly with the increase of active layer thickness. However, for a relatively long carrier lifetime, the exciton dissociation probability must be considered, and Jsc behaves wave-like with the increase of active layer thickness. The validity of this model is confirmed by the experimental results.展开更多
The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped c...The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped carriers;the perturbation of electric field due to drifting carriers has been rarely reported. In this study, the effect of transient space-charge perturbation on carrier transport in a CdZnTe semiconductor is evaluated by using the laser-beam-induced current(LBIC) technique.Cusps appear in the current curves of CdZnTe detectors with different carrier transport performances under intense excitation, indicating the deformation of electric field. The current signals under different excitations are compared. The results suggest that with the increase of excitation, the amplitude of cusp increases and the electron transient time gradually decreases. The distortion in electric field is independent of carrier transport performance of detector. Transient space-charge perturbation is responsible for the pulse shape and affects the carrier transport process.展开更多
A new evanescently-coupled uni-traveling-carrier photodiode （EC-UTC PD） based on a multimode diluted waveguide （MDW） structure is fabricated, analysed and characterized. Optical and electrical characteristics of t...A new evanescently-coupled uni-traveling-carrier photodiode （EC-UTC PD） based on a multimode diluted waveguide （MDW） structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36 A/W, a bandwidth of 11.5 GHz and a small-signal 1-dB compression current greater than 18 mA at 10 GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency （RF） bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer.展开更多
文摘Based on simple analytical equations, short circuit current density （Jsc） of the organic bulk heterojunction solar cells has been calculated. It is found that the optical interference effect plays a very important role in the determination of Jsc; and obvious oscillatory behaviour of Jsc was observed as a function of thickness. At the same time, the influence of the carrier lifetime on Jsc also cannot be neglected. When the carrier lifetime is relatively short, Jsc only increases at the initial stage and then decreases rapidly with the increase of active layer thickness. However, for a relatively long carrier lifetime, the exciton dissociation probability must be considered, and Jsc behaves wave-like with the increase of active layer thickness. The validity of this model is confirmed by the experimental results.
基金Project supported by the National Natural Science Foundation of China(Grant No.61874089)the Fund of MIIT(Grant No.MJ-2017-F-05)+2 种基金the 111 Project of China(Grant No.B08040)the NPU Foundation for Fundamental Research,Chinathe Research Found of the State Key Laboratory of Solidification Processing(NWPU),China
文摘The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped carriers;the perturbation of electric field due to drifting carriers has been rarely reported. In this study, the effect of transient space-charge perturbation on carrier transport in a CdZnTe semiconductor is evaluated by using the laser-beam-induced current(LBIC) technique.Cusps appear in the current curves of CdZnTe detectors with different carrier transport performances under intense excitation, indicating the deformation of electric field. The current signals under different excitations are compared. The results suggest that with the increase of excitation, the amplitude of cusp increases and the electron transient time gradually decreases. The distortion in electric field is independent of carrier transport performance of detector. Transient space-charge perturbation is responsible for the pulse shape and affects the carrier transport process.
基金Project supported by the National High Technology Research and Development of China (Grant Nos 2006AA01Z256,2007AA03Z419 and 2007AA03Z417)the State Key Development Program for Basic Research of China (Grant Nos 2006CB604901 and 2006CB604902)the National Natural Science Foundation of China (Grant Nos 90401025,60736036,60706009 and60777021)
文摘A new evanescently-coupled uni-traveling-carrier photodiode （EC-UTC PD） based on a multimode diluted waveguide （MDW） structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36 A/W, a bandwidth of 11.5 GHz and a small-signal 1-dB compression current greater than 18 mA at 10 GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency （RF） bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer.
