An efficient approach to characterizing and calculating carrier loss due to heating and barrier height variation in vertical-cavity surface-emitting lasers

It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser （VCSEL）. However, it is generally difficult to realize this goal using purely theoretical formulas due to difficulty h, deriving the parameters relat^i~g to the quantum well structure. In this paper, we describe an efl：icient approach to characterizing and calculating the carrier loss due to the heating and the barrier height change in the VCSEL. In the method, the thermal carrier loss mechanism is combined with gain measurement and calculation. The carrier loss is re-characterized in a calculable form by constructing the threshold current and gain detuning-related loss current using the measured gain data and then substituting them for the quantum well-related parameters in the formula. The result can be expressed as a product of an exponential weight factor linked to the barrier height change and the difference between the threshold current and gain detuning-related loss current. The gain variation at cavity frequency due to thermal carrier loss and gain detuning processes is measured by using an AllnGaAs-AIGaAs VCSEL structure. This work provides a useful approach to analysing threshold and loss properties of the VCSEL, particularly, gain offset design for high temperature operation of VCSELs.

Control of gain and thermal carrier loss profiles for mode optimization in 980-nm broad-area vertical-cavity surface-emitting lasers

Optical gain and thermal carrier loss distributions regarding current diffusion and various electric contact areas are investigated to improve the near-field modes from the ring-shape to a Gaussian-like configuration for extra-broad-area and oxide-confined vertical-cavity surface-emitting lasers. In this work an equivalent circuit network model is used. The resistance of the continuously-graded distributed Bragg reflectors （DBRs）, the current diffusion and the temperature effect due to different electric-contact areas are calculated and analyzed at first, as these parameters affect one another and are the key factors in determining the gain and thermal carrier loss. Finally, the gain and thermal carrier loss distributions are calculated and discussed.

How to get high-efficiency lead chalcogenide quantum dot solar cells?

Lead chalcogenide colloidal quantum dots(CQDs)are regarded as attractive absorption materials for novel solar cells(SCs).The cost of lead chalcogenide CQD has been decreased to a commercialization target of$5/g due to the direct production of CQD inks.However,the photoelectric conversion efficiency(PCE)of lead chalcogenide CQDSCs is presently close to 14%,well below the commercialization target(20%),which is only 41%of the theoretical Shockley-Queisser limit efficiency.In this study,the different losses of open-circuit voltage(V_(oc)),fill factor(FF),and short circuit current density(J_(sc))for current CQDSCs are systematically discussed,as well as the percentage and likely causes of each loss.Then the primary reasons for the CQDSCs’performance constraints are highlighted.Following that,we focus on the CQDSCs interfaces(i.e.,CQD/CQD,CQD/HTL,and ETL/CQD)and explore viable ways to reduce device performance loss.Finally,based on the discussion above,we propose many enhancements to significantly solve numerous major obstacles impeding device performance to boost the PCE of CQDSCs for future commercialization significantly.