Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-sec...Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-section(σ_(p))of H1 are determined to be 0.75 eV and 4.67×10^(−15)cm^(2),respectively.Distribution of apparent trap concentration in space charge region is demonstrated.Temperature-enhanced emission process is revealed by decrease of emission time constant.Electricfield-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission(PFE)model.In addition,H1 shows point defect capture properties and temperature-enhanced capture kinetics.Taking both hole capture and emission processes into account during laser beam incidence,H1 features a trap concentration of 2.67×10^(15)cm^(−3).The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.展开更多
We report on the experimental realization of a graphene quantum dots(GQD)-based humidity sensor and ultraviolet(UV)photodetector. We demonstrate that the conductance of the GQD increases linearly with increasing relat...We report on the experimental realization of a graphene quantum dots(GQD)-based humidity sensor and ultraviolet(UV)photodetector. We demonstrate that the conductance of the GQD increases linearly with increasing relative humidity(RH) of the surrounding environment due to the carrier trapping effect, which forms the basis of a humidity sensor. When the sensor is operated in the dark state, the sensitivity can reach as high as 0.48 nS RH^(-1). The GQD are also found to exhibit light intensity dependent negative photoconductivity under the UV irradiation, which can be exploited for UV detection. As a result of these carrier trapping and de-trapping processes, the performance of the photodetector can be significantly improved with the increasing RH, and the photoresponsivity can reach a high value of.418.1 μA W^(-1) in the high humid state of RH=90%.展开更多
The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method dir...The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method directly gives the induced interface trap density from the measured R-G current peak of the gated-diode architecture. An expected power law relationship between the induced back interface trap density and the accumulated stress time has been obtained.展开更多
Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give ...Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device's hot carrier characteristics. For the tested device, an expected power law relationship of ANit ～ t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.展开更多
Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentiona...Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.展开更多
采用真空热蒸镀方法以4,4′-bis(carbazol-9-yl)biphenyl(CBP)为主体材料、以bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′]iridium(acetylacetonate)[(t-bt)2Ir(acac)]磷光染料为掺杂剂构成黄色发光层,制备了高效白光的有机电致...采用真空热蒸镀方法以4,4′-bis(carbazol-9-yl)biphenyl(CBP)为主体材料、以bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′]iridium(acetylacetonate)[(t-bt)2Ir(acac)]磷光染料为掺杂剂构成黄色发光层,制备了高效白光的有机电致发光器件(OLEDs).OLEDs的器件结构为indium tin oxide(ITO)/N,N′-bis-(1-naphthyl)-N,N′-biphenyl-1,1′-biphenyl-4,4′-diamine(NPB)/CBP:(t-bt)2Ir(acac)/NPB/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)/8-hydroxyquinoline aluminum(Alq3)/Mg∶Ag,从ITO阳极开始的第一层NPB为空穴传输层,第二层超薄的NPB为蓝色发光层,BCP为空穴阻挡层和激子阻挡层,Alq3为电子传输层.结果表明,器件电压在3V启亮,在16.5V时,器件的最高亮度达到15460cd·m-2;在4V时,器件达到最大流明效率为7.5lm·W-1,器件启亮后所发出的白光光谱在低电压时随电压变化有稍微的移动,但是都在白光范围内变化.在电压达到8V后Commission Internationale de l′Eclairage(国际照明委员会)(CIE)色坐标为(0.33,0.32),并且光谱及色坐标稳定,不随电压变化而改变,与最佳的白光坐标(0.33,0.33)几乎重合.同时,从机理上解释了光谱移动和效率衰减的原因,并探讨了载流子陷阱和能量传递的关系.展开更多
基金supported by ShanghaiTech University Startup Fund 2017F0203-000-14the National Natural Science Foundation of China(Grant No.52131303)+1 种基金Natural Science Foundation of Shanghai(Grant No.22ZR1442300)in part by CAS Strategic Science and Technology Program(Grant No.XDA18000000).
文摘Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-section(σ_(p))of H1 are determined to be 0.75 eV and 4.67×10^(−15)cm^(2),respectively.Distribution of apparent trap concentration in space charge region is demonstrated.Temperature-enhanced emission process is revealed by decrease of emission time constant.Electricfield-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission(PFE)model.In addition,H1 shows point defect capture properties and temperature-enhanced capture kinetics.Taking both hole capture and emission processes into account during laser beam incidence,H1 features a trap concentration of 2.67×10^(15)cm^(−3).The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.
基金supported by the State Key Program for Basic Research of China(Grant No.2013CB632703)the National Natural Science Foundation of China(Grant Nos.11674168,11474215,and 11621091)the Scientific Research Foundation of Graduate School of Nanjing University(Grant No.2015CL01)
文摘We report on the experimental realization of a graphene quantum dots(GQD)-based humidity sensor and ultraviolet(UV)photodetector. We demonstrate that the conductance of the GQD increases linearly with increasing relative humidity(RH) of the surrounding environment due to the carrier trapping effect, which forms the basis of a humidity sensor. When the sensor is operated in the dark state, the sensitivity can reach as high as 0.48 nS RH^(-1). The GQD are also found to exhibit light intensity dependent negative photoconductivity under the UV irradiation, which can be exploited for UV detection. As a result of these carrier trapping and de-trapping processes, the performance of the photodetector can be significantly improved with the increasing RH, and the photoresponsivity can reach a high value of.418.1 μA W^(-1) in the high humid state of RH=90%.
基金special funds of major state basic research projects (G20000365)
文摘The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method directly gives the induced interface trap density from the measured R-G current peak of the gated-diode architecture. An expected power law relationship between the induced back interface trap density and the accumulated stress time has been obtained.
基金Sponsored by Motorola-Peking University Joint Project.Contract No.:MSPSDDLCHINA-0004
文摘Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device's hot carrier characteristics. For the tested device, an expected power law relationship of ANit ～ t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.
基金supported by the National Natural Science Foundation of China(Grant No.61376109)the Opening Project of National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component,China(Grant No.ZHD201202)
文摘Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.
文摘采用真空热蒸镀方法以4,4′-bis(carbazol-9-yl)biphenyl(CBP)为主体材料、以bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′]iridium(acetylacetonate)[(t-bt)2Ir(acac)]磷光染料为掺杂剂构成黄色发光层,制备了高效白光的有机电致发光器件(OLEDs).OLEDs的器件结构为indium tin oxide(ITO)/N,N′-bis-(1-naphthyl)-N,N′-biphenyl-1,1′-biphenyl-4,4′-diamine(NPB)/CBP:(t-bt)2Ir(acac)/NPB/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)/8-hydroxyquinoline aluminum(Alq3)/Mg∶Ag,从ITO阳极开始的第一层NPB为空穴传输层,第二层超薄的NPB为蓝色发光层,BCP为空穴阻挡层和激子阻挡层,Alq3为电子传输层.结果表明,器件电压在3V启亮,在16.5V时,器件的最高亮度达到15460cd·m-2;在4V时,器件达到最大流明效率为7.5lm·W-1,器件启亮后所发出的白光光谱在低电压时随电压变化有稍微的移动,但是都在白光范围内变化.在电压达到8V后Commission Internationale de l′Eclairage(国际照明委员会)(CIE)色坐标为(0.33,0.32),并且光谱及色坐标稳定,不随电压变化而改变,与最佳的白光坐标(0.33,0.33)几乎重合.同时,从机理上解释了光谱移动和效率衰减的原因,并探讨了载流子陷阱和能量传递的关系.
