Humidity sensor and ultraviolet photodetector based on carrier trapping effect and negative photoconductivity in graphene quantum dots

We report on the experimental realization of a graphene quantum dots （GQD）-based htunidity sensor and ultraviolet （UV） photodetector. We demonstrate that the conductance of the GQD increases linearly with increasing relative humidity （RH） of the surrounding environment due to the carrier trapping effect, which forms the basis of a humidity sensor. When the sensor is operated in the dark state, the sensitivity can reach as high as 0.48 nS RH-^1. The GQD are also found to exhibit light intensity dependent negative photoconductivity under the UV irradiation, which can be exploited for UV detection. As a result of these carrier trapping and de-trapping processes, the performance of the photodetector can be significantly improved with the increasing RH, and the photoresponsivity can reach a high value of-418.1 μA W^-1 in the high humid state of RH=90%.

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-section(σ_(p))of H1 are determined to be 0.75 eV and 4.67×10^(−15)cm^(2),respectively.Distribution of apparent trap concentration in space charge region is demonstrated.Temperature-enhanced emission process is revealed by decrease of emission time constant.Electricfield-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission(PFE)model.In addition,H1 shows point defect capture properties and temperature-enhanced capture kinetics.Taking both hole capture and emission processes into account during laser beam incidence,H1 features a trap concentration of 2.67×10^(15)cm^(−3).The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.

Transient surface photoconductivity of GaAs emitter studied by terahertz pump-emission spectroscopy

This paper investigates the ultrafast carrier dynamics and surface photoconductivity of unbiased semi-insulating GaAs in detail by using a terahertz pump-emission technique. Based on theoretical modelling, it finds that transient photoconductivity plays a very important role in the temporal waveform of terahertz radiation pulse. Anomalous enhancement in both terahertz radiation and transient photoconductivity is observed after the excitation of pump pulse and we attribute these phenomena to carrier capture in the EL2 centers. Moreover, the pump power- and temperature- dependent measurements are also performed to verify this trapping model.

Clarifying the atomic origin of electron killers in β-Ga_(2)O_(3) from the first-principles study of electron capture rates

The emerging wide bandgap semiconductorβ-Ga_(2)O_(3) has attracted great interest due to its promising applications for high-power electronic devices and solar-blind ultraviolet photodetectors.Deep-level defects inβ-Ga_(2)O_(3) have been intensively studied towards improving device performance.Deep-level signatures E_(1),E_(2),and E_(3) with energy positions of 0.55–0.63,0.74–0.81,and 1.01–1.10 eV below the conduction band minimum have frequently been observed and extensively investigated,but their atomic origins are still under debate.In this work,we attempt to clarify these deep-level signatures from the comparison of theoretically predicted electron capture cross-sections of suggested candidates,Ti and Fe substituting Ga on a tetrahedral site(Ti_(GaI) and Fe_(GaI))and an octahedral site(Ti_(GaII) and Fe_(GaII)),to experimentally measured results.The first-principles approach predicted electron capture cross-sections of Ti_(GaI) and Ti_(GaII) defects are 8.56×10^(–14) and 2.97×10^(–13) cm^(2),in good agreement with the experimental values of E_(1) and E_(3) centers,respectively.We,therefore,confirmed that E_(1) and E_(3) centers are indeed associated with Ti_(GaI) and Ti_(GaII) defects,respectively.Whereas the predicted electron capture cross-sections of Fe_(Ga) defect are two orders of magnitude larger than the experimental value of the E_(2),indicating E_(2) may have other origins like C_(Ga) and Ga_(i),rather than common believed Fe_(Ga).

Microstructure control of organic semiconductors via UV-ozone for high-sensitivity NO2 detection

Developing high sensitive organic semiconductors(OSCs)in organic thin-film transistors(OTFTs)is the key for OTFT based gas sensors.Herein,we report a simple processing route of highly sensitive OSCs for high performance OTFT based nitrogen dioxide(NO2)sensors,where the active OSC layer is based on ultraviolet-ozone(UVO)treated poly(3-hexylthiophene-2,5-diyl)(P3HT).Compared to conventional P3HT based OTFT sensors,the reported device exhibits a remarkable improvement of the gas response from 350%to 30000%.The studies in morphologies,chemical compositions and microstructures of the UVOtreated films reveal that a large number of carrier traps generated in the P3HT films is the decisive reason for the enhancement of sensing performance.Moreover,the optimized device shows great potential of practical applications on the stand points of sensitivity,selectivity,reusability and the ability of recovery,as well as limit of detection of~7.3 ppb.This simple method provides an innovative understanding for the role of the carrier traps in sensing performance and demonstrates a bright future for developing high performance OTFT gas sensors.