Structure and Performance of TiC-containing Diamond-like Carbon Nanocomposite Coatings Deposited by Rectangular Cathodic Arc Ion-plating

TiC-containing diamond-like carbon （TiC-DLC） nanocomposite coatings were deposited by a rectangular cathodic arc ion-plating system using C2H2 as reacting gas. Raman spectroscopy and transmission electron microscopy analysis show that with increasing flow rate of C2H2, the structure of nanocomposite coatings changes from TiC nanograin-containing to graphite nanograin-containing DLC. The harness measurements show that the hardness decreases from 28 GPa to 18 GPa with increasing C2H2 flow rate. The scratch test show that a high critical load （〉40 N） was obtained and exhibited a good adhesion between the coating and the substrate. Wear experiment shows that the friction coefficient of TiC-DLC nanocomposite coatings decreases with increasing C2H2. A low friction coefficient of 0.07 was obtained at 480 sccm C2H2.

Characteristics of Single Cathode Cascaded Bias Voltage Arc Plasma

A single cathode with a cascaded bias voltage arc plasma source has been developed with a new quartz cathode chamber,instead of the previous copper chambers,to provide better diagnostic observation and access to the plasma optical emission.The cathode chamber cooling scheme is also modified to be naturally cooled only by light emission without cooling water to improve the optical thin performance in the optical path.A single-parameter physical model has been developed to describe the power dissipated in the cascaded bias voltage arc discharge argon plasmas,which have been investigated by utilizing optical emission spectroscopy（OES） and Langmuir probe.In the experiments,discharge currents from 50 A to 100 A,argon flow rates from 800 sccm to 2000 sccm and magnetic fields of 0.1 T and 0.2 T were chosen.The results show：（a） the relationship between the averaged resistivity and the averaged current density exhibits an empirical scaling law as η∝ j^（-0.63369） and the power dissipated in the arc has a strong relation with the filling factor;（b） through the quartz,the argon ions optical emission lines have been easily observed and are dominating with wavelengths between 340 nm and 520 nm,which are the emissions of Ar^＋-434.81 nm and Ar^＋-442.60 nm line,and theintensities are increasing with the arc current and decreasing with the inlet argon flow rate;and（c） the electron density and temperature can reach 2.0 × 10^19 m^-3 and 0.48 eV,respectively,under the conditions of an arc current of 90 A and a magnetic field of 0.2 T.The half-width of the ne radial profile is approximatively equal to a few Larmor radii of electrons and can be regarded as the diameter of the plasma jet in the experiments.

Plasma diagnosis of tetrahedral amorphous carbon films by filtered cathodic vacuum arc deposition

Filtered cathodic vacuum arc(FCVA)deposition is regarded as an important technique for the synthesis of tetrahedral amorphous carbon(ta-C)films due to its high ionization rate,high deposition rate and effective filtration of macroparticles.Probing the plasma characteristics of arc discharge contributes to understanding the deposition mechanism of ta-C films on a microscopic level.This work focuses on the plasma diagnosis of an FCVA discharge using a Langmuir dualprobe system with a discrete Fourier transform smoothing method.During the ta-C film deposition,the arc current of graphite cathodes and deposition pressure vary from 30 to 90 A and from 0.3 to 0.9 Pa,respectively.The plasma density increases with arc current but decreases with pressure.The carbon plasma density generated by the arc discharge is around the order of10^(10)cm^(-3).The electron temperature varies in the range of 2-3.5 eV.As the number of cathodic arc sources and the current of the focused magnetic coil increase,the plasma density increases.The ratio of the intensity of the D-Raman peak and G-Raman peak(I_(D)/I_(G))of the ta-C films increases with increasing plasma density,resulting in a decrease in film hardness.It is indicated that the mechanical properties of ta-C films depend not only on the ion energy but also on the carbon plasma density.

Production of a large area diffuse arc plasma with multiple cathode

An arc channel at atmospheric pressure tends to shrink generally. In this paper, a non-transferred DC arc plasma device with multiple cathode is introduced to produce a large area arc plasma at atmospheric pressure. This device is comprised of a 42-mm diameter tubular chamber, multiple cathode which is radially inserted into the chamber, and a tungsten anode with a nozzle in its center. In argon/helium atmosphere, a large area and circumferential homogenous diffuse arc plasma, which fills the entire cross section surrounded by the cathode tips, is observed. Results show that the uniformity and stability of diffuse arc plasma are strongly related to the plasma forming gas. Based on these experimental results, an explanation to the arc diffusion is suggested. Moreover, the electron excitation temperature and electron density measured in diffuse helium plasma are much lower than those of constricted arc column, which indicates the diffuse helium plasma probably deviates from the local thermodynamic equilibrium state. Unlike the common non-transferred arc plasma devices, this device can provide a condition for axial-fed feedstock particles. The plasma device is attempted to spheroidize alumina powders by using the central axis to send the powder. Results show that the powder produced is usually a typical hollow sphere.

Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

Three-dimensional non-equilibrium modeling of a DC multi-cathode arc plasma torch

In this paper,a three-dimensional non-equilibrium steady arc model is used to investigate the temperature,velocity and electromagnetic field in multi-cathode arc torch,and the formation mechanism of a large-area,uniform and diffused arc plasma is analyzed.The numerical simulation results show that a large volume plasma region can be formed in the central region of the generator during discharge.During this process,the maximum electron temperature appears near the cathode and in the central convergence region,while the maximum heavy particle temperature only appears in the central convergence region.This phenomenon is consistent with the experimental arc images.Near the cathode tip,the arc column is in a contraction state.In the area slightly away from the cathode,the six arc columns begin to join together.In the plasma generator,there is a large-scale current distribution in all directions of X,Y and Z,forming a stable arc plasma with a wide range of diffusion.The calculated electron temperature distribution is in good agreement with the measured electron temperature.The results suggest that the largearea diffused arc plasma in the multi-cathode arc torch is the combined effect of current distribution,convection heat transfer and heat conduction.

Fluctuation of arc plasma in arc plasma torch with multiple cathodes

Fluctuation phenomena commonly exist in arc plasmas, limiting the application of this technology.In this paper,we report an investigation of fluctuations of arc plasmas in an arc plasma torch with multiple cathodes.Time-resolved images of the plasma column and anode arc roots are captured.Variations of the arc voltage, plasma column diameter, and pressure are also revealed.The results indicate that two well-separated fluctuations exist in the arc plasma torch.One is the high-frequency fluctuation(of several thousand Hz), which arises from transferring of the anode arc root.The other is the low-frequency fluctuation(of several hundred Hz), which may come from the pressure variation in the arc plasma torch.Initial analysis reveals that as the gas flow rate changes, the low-frequency fluctuation shows a similar variation trend with the Helmholtz oscillation.This oscillation leads to the shrinking and expanding of the plasma column.As a result, the arc voltage shows a sinusoidal fluctuation.

Si_3N_4 nano-microsphere synthesized by cathode arc plasma and heat treatment

The Si3N4 microcrystals with a hollow sphere structure were prepared by using the simple heat treatment of the Si3N4 flakes, which were prepared by using the cathode arc plasma. The products were characterized by XRD, SEM and TEM. The photoluminescence (PL) spectrum of the Si3N4 nano-microsphere was studied. The obtained Si3N4 microcrystals, which show a hollow sphere structure, are up to several nanometers in diameter. During the process, the heat treatment and Ni catalyst play a key role in the forming structure and morphology. This result provides a possibility for mass producing Si3N4 microcrystals.

Cathode Erosion of Graphite and Cu/C Materials in Airarcs

Cathode erosion of graphite and Cu/C was studied in direct current arcs, which were ignited between two electrodes comprised of two kinds of carbon materials and a tungsten anode in air. The arced zones on the cathode surface were investigated by a scanning electron microscope. Also, the cathode erosion rates of the investigated materials were measured. The results show that two distinct zone can be seen on both cathodes. The eroded area was located at the zone just opposite to the anode and surrounded by a white zone. The arced surface on the Cu/C containing 9.3 % Cu is rougher than that of the pure graphite. Many particles with various sizes distributed on the Cu/C. The vaporization of Cu can lower the surface temperature and reduce the cathode erosion. Therefore, the cathode erosion rate of the Cu/C is lower than that of the pure graphite.

Distribution of Cathode Spots in Vacuum Arc Under Nonuniform Axial Magnetic Fields

Recent results on the distribution of vacuum arc cathode spots （CSs） in nonuniform axial magnetic field （AMF） are presented. Based on previous studies, we deem that two contrary influences of AMF, inward effect and outward effect, are attributed to CSs distribution. With this notion, we have analyzed the controlling effectiveness of nonuniform AMF on CSs distribution. Experiments were conducted in a detachable vacuum chamber with iron-style AMF electrodes. Images of vacuum arc column and the distribution of CSs were photographed with a high-speed charge coupled device （CCD） camera. Experimental results agreed well with the theoretical analysis.

Transition characteristics from radio-frequency discharge to arc in hollow cathode configuration

The technique of glow discharges in radio frequency configuration was applied to ignite hollow cathode vacuum arc discharge. The effect of discharge parameters on the building up of hollow cathode arc discharge was investigated. The emission spectrum during the vacuum arc ignition process was measured to disclose the discharge dynamics. There exists a threshold radio frequency power （300 W）, beyond which hollow cathode is in T mode discharge status while radio frequency discharge changes into the arc discharge. With the increase of the radio frequency power, the plasma temperature and electronic density increase, and the discharge mode transits more rapidly. The ignition time of hollow cathode vacuum arc discharge is less than 4 s with a radio frequency power of 700 W.

Fabrication of Tungsten Carbide Films by Filtered Pulse Arc Deposition with Cemented Tungsten Carbide Cathodes

Tungsten carbide films (W-C films) were fabricated on silicon substrates by using the filtered pulse arc deposition (FPAD) method. Two types of cemented tungsten carbide (WC) were used as cathode, one containing Co and the other Ti, which were used as binders for forming the cathode shape. The films were fabricated by varying the pulse arc current and substrate bias voltage. The discharge, deposition and film properties were investigated under these deposition conditions. The cathode wear amount when using WC-Co (WC cathode containing Co) was found to be smaller than that measured when WC-Ti (WC cathode containing Ti) was used. The W-C film thickness was approximately 30 - 40 nm under all conditions, except when the pulse arc current was 50 A and the film thickness, was approximately 10 nm. Compared to the WC-Ti, the consumption of cathode material is suppressed in the WC-Co, indicating that the efficiency for film preparation of the latter is good. From the X-ray diffraction analysis, the crystalline phase of W-C films fabricated using WC-Co and WC-Ti were observed as W2C and WC1-x, respectively, indicating that different crystalline phases could be fabricated using different cathodes. From the X-ray photoelectron spectroscopy analysis, the oxidation layer formed by air exposure was observed to exclusively exist on the W-C film surface. Moreover, almost all oxygen in the oxidation layer bonded with tungsten.

Measurement of cathode surface temperature using the method of CCD imaging in arc discharge

A two-wavelength pyrometry device using ordinary array CCD (charge coupled device) to collect the ra- diation data in the horizontal and vertical directions has been developed for measuring the cathode surface temperature during the arc discharge. Analyses of experimental results show that the device can make the measurement of the cathode surface temperature feasible. The cathode surface temperatures measured are lower than the melting point of tungsten (3653 K), and the arc current, cathode diameter, and the cathode length are the main influencing factors of the cathode surface temperature.

Effect of 10% Si addition on cathodic arc evaporated TiAlSiN coatings

The effect of 10% Si （mole fraction） addition on TiAlSiN coatings was studied. Ti0.5Al0.5N, Ti0.5Al0.4Si0.1N and Ti0.55Al0.35Si0.1N coatings were deposited on WC？Co substrates by cathodic arc evaporation. The microstructure and mechanical properties were characterized by X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, scanning electron microscopy （SEM）, nano-indentation measurement and scratch test. The mechanisms of how Si affects the properties and failure modes of TiAlSiN coatings were also discussed. The results show that the addition of 10% Si results in the formation of nc-（Ti,Al,Si）N/a-Si3N4 nano-composite structure. The hardness and toughness of TiAlSiN coatings increase, whereas the coating adhesion strength decreases. Compared with Ti0.55Al0.35Si0.1N coating, Ti0.5Al0.4Si0.1N coating has higher hardness but lower toughness. The dominant failure mode of TiAlN coating is wedging spallation due to low toughness and strong interfacial adhesion. The dominant failure mode of TiAlSiN coatings is buckling spallation due to improved toughness and weakened interfacial adhesion.

Approximate Design of Alloy Composition of Cathode Target

An empirical formula for composition demixing analysis in cathodic arc ion plating using alloy target is established based on the concepts of average charged state and relative demixing parameter. The level of composition demixing effect is presented by demixing degree of one element. For binary constituent alloy target, the composition change trend in coating is discussed and the limit of demixing degree for each element is determined. The content of one element with higher average charged state gets larger in coating than in alloy target, at meantime, the content of one element with lower average charged state gets less. For each one of the two constituents, the less the atom percent in alloy target, the larger the difference of its contents between the coating and the target. For triple constituent alloy target, the content change of one element with moderate average charged state is discussed in detail. Its content in coating getting larger or less is determined by the combination result of the contents of the other two elements in alloy target. For a given content of the element with moderate average charged state in triple alloy target, the content deviation level of that element from coating to alloy target will be not larger than that using binary alloy target containing only that element and one of the two others. According to the wanted coating composition, the composition design of alloy target is easily deduced from the formula.

Composition demixing effect on cathodic arc ion plating

The composition demixing effect has been found often in alloy coatings deposited by cathodic arc ion plating using various alloy cathode targets. The characteristics of composition demixing phenomena were summarized. Beginning with the ionization zone near the surface of the cathode target, a physical model in terms of the ions generated in the ionization zone and their movement in the plating room modified by bias electric field was proposed. Based on the concept of electric charge state, the simulation calculation of the composition demixing effect was carried out. The percentage of atoms of an element in coating and from the alloy target was demonstrated by direct comparison. The influences of the composition change of the alloy target and the bias electric field on the composition demixing effect were discussed in detail. It is also proposed that the average charge states of the elements may be used to calculate the composition demixing effect and to design the composition of the alloy target.

Effect of pulsed bias on the properties of ZrN/TiZrN films deposited by a cathodic vacuum arc

ZrN/TiZrN multilayers are deposited by using the cathodic vacuum arc method with different substrate bias（from 0 to 800 V）,using Ti and Zr plasma flows in residual N 2 atmosphere,combined with ion bombardment of sample surfaces.The effect of pulsed bias on the structure and properties of films is investigated.Microstructure of the coating is analyzed by X-ray diffraction（XRD）,and scanning electron microscopy（SEM）.In addition,nanohardness,Young＇s modulus,and scratch tests are performed.The experimental results show that the films exhibit a nanoscale multilayer structure consisting of TiZrN and ZrN phases.Solid solutions are formed for component TiZrN films.The dominant preferred orientation of TiZrN films is（111） and（220）.At a pulsed bias of 200 V,the nanohardness and the adhesion strength of the ZrN/TiZrN multilayer reach a maximum of 38 GPa,and 78 N,respectively.The ZrN/TiZrN multilayer demonstrates an enhanced nanohardness compared with binary TiN and ZrN films deposited under equivalent conditions.

THE EFFECTS OF NEGATIVE BIAS AND FLUX RATIO ON THE PROPERTIES OF TiN THIN FILMS FORMED BY FILTERED CATHODIC ARC PLASMA TECHNIQUE

The filtered cathodic vacuum-arc (FCVA) technique is a supplementary and alterna tive technique with respect to convendtional physical and chemical vapour deposi tion which can remove macro-particles effectively and make the deposition proces s at ambient temperature. In this work, high quality TiN thin films were deposi ted on silicon substrates at low temperature using the improved filtered cathodi c arc plasma (FCAP) technique. AFM, XRD, TEM were employed to characterize the T iN thin films. The effects of the negative substrate bias on the grain size, pre ferred crystalline orientation, surface roughness of TiN thin films were discuss ed.

Influences of Bias Voltage and Target Current on Structure,Microhardness and Friction Coefficient of Multilayered TiAlN/CrN Coatings Synthesized by Cathodic Arc Plasma Deposition

Multilayered TiAlN/CrN coatings have been synthesized on stainless steel substrates by cathodic arc plasma deposition using TiAl and Cr targets.Influences of the bias voltage,cathode current ratio ITiAl/ICr,and deposition pressure on the hardness and friction coefficient of the coatings were investigated.The measurement revealed existence of two cubic phases,face-centercubic （Cr,Al）N and（Ti,Al）N,in the coatings deposited under various bias voltages except for the coating deposited at -400 V,which is amorphous.The hardness of the coatings was strongly dependent on the Itial/Icr ratio and deposition pressure,and reached a maximum of 33 GPa at an ITiAI/ICr ratio of 1.0 and a pressure of 1.0 Pa.The incorporation of the element chromium can reduce the density of pinholes in the coatings and assist the optimization of deposition conditions for high quality TiAlN/CrN coatings.

The Effect of Annealing under Non-vacuum on the Optical Properties of TiAlN Non-vacuum Solar Selective Absorbing Coating Prepared by Cathodic Arc Evaporation

TiAIN solar selective absorbing coatings which were deposited on 304L stainless steel using cathodic arc evaporation method were annealed under non-vacuum at different temperatures with different times. The optical properties （absorptance and emittance） of the coatings were measured by a spectrophotometer. It was found that, after being annealed for 2 hours at different temperatures, the absorptance of the coatings reached the highest value of 0.92 at 700 ℃ while the emittance got the lowest value of 0.38 at 800 ℃. When the coatings were annealed at 600 ℃ for 24 hours, the optical properties changed to 0.92/0.44 （absorptance/ emittance）. By measuring the structure, morphology, elements and surface roughness of the coatings, it was found that both the elemental composition and the surface roughness of the coatings changed as a result of annealing, and these changes caused the change of the optical properties of the coatings.