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Determination of the Series Resistance of a Series Vertical-Junction Silicon (N+/P/P+) Solar Cell under Polychromatic Illumination and Magnetic Field: Effect of Optimum Thickness
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作者 Dibor Faye Babou Dione +1 位作者 Mountaga Boiro Pape Diop 《Journal of Modern Physics》 2024年第10期1543-1554,共12页
By solving the magneto-transport equation for excess minority charge carriers in the base of the series vertical-junction silicon cell, the phenomenological parameters of the cell can be determined from the boundary c... By solving the magneto-transport equation for excess minority charge carriers in the base of the series vertical-junction silicon cell, the phenomenological parameters of the cell can be determined from the boundary conditions. Photocurrent density and photovoltage are determined for each value of applied magnetic field and corresponding optimum thickness, to establish the current-voltage characteristic (Jph(Sf, Sb, z, B, Hop)-Vph(Sf, Sb, z, B, Hop) of the silicon cell under polychromatic illumination. This study will make it possible to reduce the material used (by reducing the optimum thickness), which will help to lower prices. It will also enable us to reduce betting effects (lower series resistance), thereby boosting solar cell efficiency. 展开更多
关键词 series Vertical Junction Silicon cell Static Regime Magnetic Field Optimum Thickness series Resistance
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