The slow light propagation in a line defect waveguide in chalcogenide photonic crystal of As2S3 rods in air medium has been investigated. It is found that the filling factor of the chaleogenide photonic crystal and th...The slow light propagation in a line defect waveguide in chalcogenide photonic crystal of As2S3 rods in air medium has been investigated. It is found that the filling factor of the chaleogenide photonic crystal and the size of defect rods decide the propagation of the guided mode. An increase in the filling factor results in a sharp decrease of the group velocity in the photonic crystal waveguide. It has been demonstrated that, by tuning the filling factor and size of defect rods, the group velocity will be reduced up to about 0.22c.展开更多
Based on the designed As2Se3 and As2S3 chalcogenide glass photonic crystal fiber（PCF） and the scalar nonlinear Schrdinger equation,the effects of pump power and wavelength on modulation instability（MI） gain are co...Based on the designed As2Se3 and As2S3 chalcogenide glass photonic crystal fiber（PCF） and the scalar nonlinear Schrdinger equation,the effects of pump power and wavelength on modulation instability（MI） gain are comprehensively studied in the abnormal dispersion regime of chalcogenide glass PCF.Owing to high Raman effect and high nonlinearity,ultra-broadband MI gain is obtained in chalcogenide glass PCF.By choosing the appropriate pump parameter,the MI gain bandwidth reaches 2738 nm for the As2Se3 glass PCF in the abnormal-dispersion region,while it is 1961 nm for the As2S3 glass PCF.展开更多
Stimulated Brillouin scattering in planar integrated circuits promises to realize compact and highly coherent lasers.Here we report efficient Brillouin lasing at telecommunication wavelength from a planar Ge_(25)Sb_(1...Stimulated Brillouin scattering in planar integrated circuits promises to realize compact and highly coherent lasers.Here we report efficient Brillouin lasing at telecommunication wavelength from a planar Ge_(25)Sb_(10)S_(65) chalcogenide(ChG)resonator with a high quality factor above 106.A low lasing threshold of 24.8 mW is achieved with a slope efficiency of 8.3%.An 8-kHz linewidth is measured for 1.56-mW on-chip output power.This work offers a good opportunity to enrich the versatility and functionality of the ChG photonics on account of their intrinsic advantages of low loss,high third-order nonlinearity,and potential capacity for wafer-scale fabrication.展开更多
基金supported by the CSIR,New Delhi of India under Grant No.08/329/(0008)/2006-EMR-I
文摘The slow light propagation in a line defect waveguide in chalcogenide photonic crystal of As2S3 rods in air medium has been investigated. It is found that the filling factor of the chaleogenide photonic crystal and the size of defect rods decide the propagation of the guided mode. An increase in the filling factor results in a sharp decrease of the group velocity in the photonic crystal waveguide. It has been demonstrated that, by tuning the filling factor and size of defect rods, the group velocity will be reduced up to about 0.22c.
基金Project supported by the National Natural Science Fundation of China(Grant No.11404286)the Natural Science Fundation of Zhejiang Province,China(Grant No.LY15F050010)the Scientific Research Foundation of Zhejiang University of Technology,China(Grant No.1401109012408)
文摘Based on the designed As2Se3 and As2S3 chalcogenide glass photonic crystal fiber（PCF） and the scalar nonlinear Schrdinger equation,the effects of pump power and wavelength on modulation instability（MI） gain are comprehensively studied in the abnormal dispersion regime of chalcogenide glass PCF.Owing to high Raman effect and high nonlinearity,ultra-broadband MI gain is obtained in chalcogenide glass PCF.By choosing the appropriate pump parameter,the MI gain bandwidth reaches 2738 nm for the As2Se3 glass PCF in the abnormal-dispersion region,while it is 1961 nm for the As2S3 glass PCF.
基金supported by the Key Project in Broadband Communication and New Network of the Ministry of Science and Technology(MOST)(No.2020YFB1805800).
文摘Stimulated Brillouin scattering in planar integrated circuits promises to realize compact and highly coherent lasers.Here we report efficient Brillouin lasing at telecommunication wavelength from a planar Ge_(25)Sb_(10)S_(65) chalcogenide(ChG)resonator with a high quality factor above 106.A low lasing threshold of 24.8 mW is achieved with a slope efficiency of 8.3%.An 8-kHz linewidth is measured for 1.56-mW on-chip output power.This work offers a good opportunity to enrich the versatility and functionality of the ChG photonics on account of their intrinsic advantages of low loss,high third-order nonlinearity,and potential capacity for wafer-scale fabrication.
