Impact of 〈100〉Channel Direction for High Mobility p-MOSFETs on Biaxial Strained Silicon

Biaxial strain technology is a promising way to improve the mobility of both electrons and holes, while （100） channel direction appears as to be an effective booster of hole mobility in particular. In this work, the impact of biaxial strain together with （100） channel orientation on hole mobility is explored. The biaxial strain was incorporated by the growth of a relaxed SiGe buffer layer,serving as the template for depositing a Si layer in a state of biaxial tensile strain. The channel orientation was implemented with a 45^o rotated design in the device layout,which changed the channel direction from （110） to （100） on Si （001） surface. The maximum hole mobility is enhanced by 30% due to the change of channel direction from （110） to （100） on the same strained Si （s-Si） p-MOSFETs,in addition to the mobility enhancement of 130% when comparing s-Si pMOS to bulk Si pMOS both along （110） channels. Discussion and analysis are presented about the origin of the mobility enhancement by channel orientation along with biaxial strain in this work.

The Security Analysis of Two-Step Quantum Direct Communication Protocol in Collective-Rotation Noise Channel

To analyze the security of two-step quantum direct communication protocol （QDCP） by using Einstein-Podolsky Rosen pair proposed by Deng et al. [Phys. Rev. A 68 （2003）042317] in collective-rotation noise channel, an excellent model of noise analysis is proposed. In the security analysis, the method of the entropy theory is introduced, and is compared with QDCP, an error rate point Qo（M ： （Q0, 1.0）） is given. In different noise levels, if Eve wants to obtain the same amount of information, the error rate Q is distinguishable. The larger the noise level ~ is, the larger the error rate Q is. When the noise level ~ is lower than 11%, the high error rate is 0.153 without eavesdropping. Lastly, the security of the proposed protocol is discussed. It turns out that the quantum channel will be safe when Q 〈 0.153. Similarly, if error rate Q〉 0.153 = Q0, eavesdropping information I 〉 1, which means that there exist eavesdroppers in the quantum channel, and the quantum channel will not be safe anymore.

Analytical Modeling of Threshold Voltage for Double-Gate MOSFET Fully Comprising Quantum Mechanical Effects

The analytical solutions to 1D Schrdinger equation (in depth direction) in double gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.The non uniform potential in the channel is concerned with an arbitrary depth so that the analytical solutions agree well with numerical ones.Then,an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical (QM) effects.This model predicts an increased electron density with an increasing channel depth in subthreshold region or mild inversion region.However,it becomes independent on channel depth in strong inversion region,which is in accordance with numerical analysis.It is also concluded that the QM model,which barely considers a box like potential in the channel,slightly over predicts threshold voltage and underestimates electron density,and the error increases with an increasing channel depth or a decreasing gate oxide thickness.

Direct Modulation of the Guard Cell Outward- Rectifying Potassium Channel （CORK） by Abscisic Acid

Dear Editor,Abscisic acid （ABA） induces turgot loss and hence stomatal closure by promoting rapid net K^＋ efflux from guard cells （GCs） through outward-rectifying K^＋ （K^＋out） channels （Schroeder et al., 1987; Blatt, 1990）. The mechanisms of ABA signaling in GCs are detailed elsewhere （see Munemasa et al., 2015; Weiner et al., 2010; Pandey et al., 2007）. Briefly, ABA binds to the PYR/ PYL/RCARs, a family of soluble steroidogenic acute regulatory- related lipid transfer （START） proteins, and, in turn, inactivates the downstream PP2C （type 2C protein phosphatase）, leading to the activation of SnRK2.6 （SNF1 [sucrose non-fermenting-1- related protein kinase]/OST1 [open stomata 1]） protein kinases.

Dual Strengthened Control of Recrystallization Behavior on CVCDE Magnesium Alloy Containing Characteristic Structure

Various characteristic structures in typical magnesium alloys,including dislocation cells,substructures and twins,have an important influence on the dynamic recrystallization behavior,and the DRX(dynamic recrystallization)behavior is closely related to the grain refinement and texture weakening of the hot deformed structure.Therefore,this study reveals the influence of the above characteristic structures on the dynamic recrystallization behavior of magnesium alloys,which have great significance for regulating the high-performance hot deformed microstructure of magnesium alloys and optimizing the macro mechanical properties.In this study,continuous variable channel direct extrusion(CVCDE)magnesium alloy was prepared by CVCDE,and its macro mechanical properties including hardness and uniaxial tension were characterized.The thermoplastic deformation behavior and texture evolution of magnesium alloy with characteristic structure were analyzed by electron back-scattering diffraction technology.It is found that the dislocation recombination was realized by deformation mechanism(slip,climb and cross slip),the formation of grain substructure in coarse grains and the induction of recrystallization by twins promote the recrystallization behavior in hot deformed structures more adequate,which effectively improves the degree of microstructure refinement and deformation uniformity.

Quasiclassical trajectory study of the reaction NH(X^3∑^-)+H→N(~4S)+H_2

The dynamics of the NH + H→N+H2 reaction has been investigated by means of the 3D quasiclassical trajectory approach by using the LEPS potential energy surface.The calculated rate coefficient is in good agreement with the experimental value.The reaction was found to occur via a direct channel.The product H2 has a cold excitation of rotational state,but has a reverse distribution of the vibrational state with a peak at v=1.Based on the potential energy surface and the trajectory analysis,the reaction mechanism has been explained successfully.