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Integrative method in lithofacies characteristics and 3D velocity volume of the Permian igneous rocks in H area, Tarim Basin 被引量:1
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作者 Yang Haijun Liu Yongfu +3 位作者 Xie Huiwen Xu Yongzhong Sun Qi Wang Shuangshuang 《International Journal of Mining Science and Technology》 SCIE EI 2013年第2期179-184,共6页
This paper introduces horizon control, seismic control, logging control and facies control methods through the application of the least squares fitting of logging curves, seismic inversion and facies-controlled techni... This paper introduces horizon control, seismic control, logging control and facies control methods through the application of the least squares fitting of logging curves, seismic inversion and facies-controlled techniques. Based on the microgeology and thin section analyses, the lithology, lithofacies and periods of the Permian igneous rocks are described in detail. The seismic inversion and facies-controlled techniques were used to find the distribution characteristics of the igneous rocks and the 3D velocity volume. The least squares fitting of the logging curves overcome the problem that the work area is short of density logging data. Through analysis of thin sections, the lithofacies can be classified into eruption airfall subfacies, eruption pyroclastic flow subfacies and eruption facies. 展开更多
关键词 characteristics of igneous rocks fitting of logging curves Seismic inversion Velocity volume Seismic facies
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An improved single-π equivalent circuit model for on-chip inductors in GaAs process 被引量:1
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作者 Hansheng Wang Weiliang He +1 位作者 Minghui Zhang Lu Tang 《Journal of Semiconductors》 EI CAS CSCD 2017年第11期91-96,共6页
An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect bra... An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process. 展开更多
关键词 on-chip inductors GaAs process equivalent circuit model substrate lateral coupling branch improved characteristic function approach vector fitting
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