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Experimental investigation of loss and gain characteristics of an abnormal In_xGa_(1-x)As/GaAs quantum well structure 被引量:3
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作者 贾燕 于庆南 +6 位作者 李芳 王明清 卢苇 张建 张星 宁永强 吴坚 《Chinese Optics Letters》 SCIE EI CAS CSCD 2018年第1期57-61,共5页
In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for th... In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for the first time, to the best of our knowledge. This special well structure is formed based on the indium-rich effect from the material growth process. The loss and gain are obtained by optical pumping and photoluminescence(PL)spectrum measurement at dual facets of an edge-emitting device. Unlike conventional quasi-rectangle wells, the asymmetrical step well may lead to a hybrid strain configuration containing both compressive and tensile strains and, thus, special loss and gain characteristics. The results will be very helpful in the development of multiple wavelength In Ga As-based semiconductor lasers. 展开更多
关键词 In AS x)As/GaAs quantum well structure Experimental investigation of loss and gain characteristics of an abnormal In_xGa
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