Ultra-Robust and High-Performance Rotational Triboelectric Nanogenerator by Bearing Charge Pumping

As an emerging technology to convert environmental high-entropy energy into electrical energy,triboelectric nanogenerator(TENG)has great demands for further enhancing the service lifetime and output performance in practical applications.Here,an ultra-robust and high-performance rotational triboelectric nanogenerator(R-TENG)by bearing charge pumping is proposed.The R-TENG composes of a pumping TENG(P-TENG),an output TENG(O-TENG),a voltage-multiplying circuit(VMC),and a buffer capacitor.The P-TENG is designed with freestanding mode based on a rolling ball bearing,which can also act as the rotating mechanical energy harvester.The output low charge from the P-TENG is accumulated and pumped to the non-contact O-TENG,which can simultaneously realize ultralow mechanical wear and high output performance.The matched instantaneous power of R-TENG is increased by 32 times under 300 r/min.Furthermore,the transferring charge of R-TENG can remain 95%during 15 days(6.4×10^(6)cycles)continuous operation.This work presents a realizable method to further enhance the durability of TENG,which would facilitate the practical applications of high-performance TENG in harvesting distributed ambient micro mechanical energy.

An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump

In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power consumption.An event-driven charge pump(CP)loop with the dynamic strength control(DSC),is proposed in this paper,which overcomes trade-offs inherent in conventional structures.The presented design addresses and resolves the large signal stability issue,which has been previously overlooked in the event-driven charge pump structure.This breakthrough allows for the full exploitation of the charge-pump structure's poten-tial,particularly in enhancing transient recovery.Moreover,a dynamic error amplifier is utilized to attain precise regulation of the steady-state output voltage,leading to favorable static characteristics.A prototype chip has been fabricated in 65 nm CMOS technology.The measurement results show that the proposed OCL-LDO achieves a 410 nA low quiescent current(IQ)and can recover within 30 ns under 200 mA/10 ns loading change.

Research and Design of an On-Chip High Efficiency Dual-Output Charge Pump

To meet the demands for different supply voltage levels on SOC required by digital modules like CPU core and analog modules,a novel dual-output charge pump is proposed. The charge pump can output a step-up and a step-down voltage simultaneously with a high driving capability. The multiple gain pair technique was introduced to enhance its efficiency. The proposed co-use technology for capacitors and switch arrays reduced its cost. The charge pump was designed and fabricated in a TSMC 0.35μm mixed-signal CMOS process. A group of analytical equations were derived to model its static characteristics. A state-space model was derived to describe its small-signal dynamic behavior. Analytical predictions were verified by Spectre simulation and testing. The consistency of simulated results as well as test results with analytical predictions demonstrated the high precision of the derived analytical equations and the developed models.

An Improved Charge-Averaging Charge Pump for a Fractional-N Frequency Synthesizer

An improved charge-averaging charge pump and the corresponding circuit implementation are presented. The charge-averaging charge pump proposed by Koo is analyzed and a new scheme is proposed. This new scheme decreases power by 1/3 and eliminates the practical defects in the original. Spectre Verilog behavioral simulation results show that the proposed scheme can strongly reduce the energy of spurs. Circuit implementation of this new charge pump for a frequency synthesizer with a fractional division ratio of 1/3 is then presented and multi-level simulation is performed to validate its feasibility at the circuit level. The simulation results show this new scheme outputs a flat voltage curve in a locked state and can thus effectively suppress fraction spurs.

A Novel All-pMOS AC to DC Charge Pump with High Efficiency

A novel AC to DC charge pump with high performance is presented. Due to the pMOS structure and threshold voltage canceling technology, the efficiency and the output voltage are greatly improved. Test results show that the output voltage and power efficiency are improved by 125% and 104% respectively at 13.56MHz for a 1V sinusoidal input compared to the traditional MOS diodes structure.

一种使Charge-pump的输出电压稳定的时钟电路

随着工艺的提高和电源电压的降低,需要能够在低电压下工作的电路。该文介绍了一种能在1.8V电压下工作的时钟产生器。它的频率随着电源电压的增大而减小,随着温度的升高而增大,并能抑制制程的偏差对频率产生的影响。从而使Charge-pump的输出电压稳定。

Self-Balanced Charge Pump with Fast Lock Circuit

A self-balanced charge pump （CP） with fast lock circuit to achieve nearly zero phase error is proposed and analyzed. The proposed CP is designed based on the SMIC 0.25μm 1P5M complementary metal oxide semiconductor （CMOS） process with a 2.5 V supply voltage, HSPICE simulation shows that even if the mismatch of phase/frequency detector （PFD） was beyond 10%, the charge pump could still keep nearly zero phase error, Incorporated fast lock circuit can shorten start-up time to below 300 ns.

A PLL Clock Frequency Multiplier Using Dynamic Current Matching Adaptive Charge-Pump and VCO Frequency Reuse

A 3.5 times PLL clock frequency multiplier for low voltage different signal （LVDS） driver is presented. A novel adaptive charge pump can automatically switch the loop bandwidth and a voltage-controlled oscillator （VCO） is designed with the aid of frequency ranges reuse technology. The circuit is implemented using 1st Silicon 0.25 μm mixed-signal complementary metal-oxide-semiconductor （CMOS） process. Simulation results show that the PLL clock frequency multiplier has very low phase noise and very short capture time .

基于Charge Pump技术的低压高频Antiringing MOS开关驱动电路

本文给出了一种基于Charge Pump适用于低压高频Antiringing MOS开关的驱动电路。该驱动电路工作电压最低可达1.8V,工作频率最高达5MHz。文章从Charge Pump及Antiringing的基本原理出发详细介绍了此驱动电路设计思想,并且给出最终设计电路。该电路基于Samsung 0.65-μm BiCMOS工艺设计,经过HSPICE仿真验证。

基于dikson charge pump的voltage doubler设计

随着集成电路工艺的发展,电源电压不断降低,使得charge pump在芯片上的地位更加重要。传统的voltage doubler基于开关的实现方法,由于MOS管阈值电压的影响,使得voltagedoubler的输出电压与2VDD电平相差甚远。在分析dikson charge pump工作原理的基础上,提出了一种新型的基于dikson charge pump的voltage doubler,通过外加电容的方法,可以实现对diksoncharge pump的输出电压进行微调,从而得到所需要的2VDD的电平。采用smic0.35μm工艺仿真后发现当VDD=5V时,传统的voltage doubler输出电平为8.54V,而dikson voltage doubler的输出电平为理想的10V。

An Improved Charge Pumping Method to Study Distribution of Trapped Charges in SONOS Memory

In silicon-oxide-nitride-oxide-silicon （SONOS） memory and other charge trapping memories, the charge distribution after programming operation has great impact on the devic＇s characteristics,such as reading,programming/erasing, and reliability. The lateral distribution of injected charges can be measured precisely using the charge pumping method. To improve the precision of the actual measurement, a combination of a constant low voltage method and a constant high voltage method is introduced during the charge pumping testing of the drain side and the source side, respectively. Finally, the electron distribution after channel hot electron programming in SONOS memory is obtained,which is close to the drain side with a width of about 50nm.

Design of a CMOS Adaptive Charge Pump with Dynamic Current Matching

A novel structure for a charge pump circuit is proposed, in which the charge-pump （CP） current can adaptively regulated according to phase-locked loops （PLL） frequency synthesis demand. The current follow technology is used to make perfect current matching characteristics, and the two differential inverters are implanted to increase the speed of charge pump and decrease output spur due to theory of low voltage difference signal. Simulation results, with 1st silicon 0. 25μm 2. 5 V complementary metal-oxide-semiconductor （CMOS） mixed-signal process, show the good current matching characteristics regardless of the charge pump output voltages.

Synthesis and characterization of Ca2Sn1-xCexO4 with blue luminescence originating from Ce^4＋ charge transfer transition

Ce^4＋-doped Ca2SnO4 with a one-dimensional structure, which emits bright blue light, is prepared by using a solid-state reaction method. The x-ray diffraction results show that the Ce^4＋ ions doped in Ca2SnO4 occupy the Sn^4＋ sites. The excitation and emission spectra of Ca2Sn1-xCexO4 appear to have broad bands with peaks at - 268nm and -442nm, respectively. A long excited-state lifetime （-83μs） for the emission from Ca2Sn1-xCexO4 suggests that the luminescence originates from a ligand-to-metal Ce^4＋ charge transfer （CT）. The luminescent properties of Ca2Snl_xCexO4 have been compared with those of Sr2CeO4, which is the only material reported so far to show Ce^4＋ CT luminescence. More interestingly, it is observed that the emission intensity of Ca2Sn1-xCexO4 with a small doping concentration （x - 0.03） is comparable to that of Sr2CeO4 in which the concentration of active centre is 100%.

基于电荷泵DC-DC转换器的开关电源设计

设计了一种成本较低,效率较高的基于电荷泵与Boost升压电路的开关电源,作用于对正负双电源运放供电。利用Boost模块将3~4.5 V的输入电压升压至稳定的5.5 V电压,并通过电荷泵负压电路、电荷泵倍压电路与TL431串联稳压电路将5.5 V的电压转化为±5 V的输出电压为运放进行供电。通过仿真软件对电路进行仿真搭建,并对重要节点与输出电压电流的仿真波形进行分析,确保在3~4.5 V的DC输入电压范围内,提供较为稳定的、输出电压纹波在2%以内的±5 V输出电压。

一种电荷泵型DC-DC电源管理芯片的设计

提高电源管理芯片的效率和输出电压稳定性,需要降低电压损失、减小负载调整率和线性调整率。基于华润上华2μm-36 V双极工艺设计了一款电荷泵型DC-DC电源管理芯片。采用H桥拓扑结构,调整了功率管的类型和数量以降低电压损失。未采用PFM、PSM、PWM调制方式,不仅降低了电路复杂性,而且避免了以上调制方式的缺点。设计了无运算放大器的带隙基准模块,不仅没有失调电压,而且减小了版图面积,温漂系数是144.4 ppm/℃,是为了抵消误差放大器网络产生的温漂。设计的RC振荡器与传统的RC振荡器不同,其频率更加稳定。设计的误差放大器没有采用传统的两级差分跨导运算放大器结构,电路结构简单,相位裕度是62.81°。优化振荡器模块减小了电压损失,优化带隙基准模块和误差放大器模块降低了负载调整率和线性调整率。仿真结果表明,温度在−55℃~125℃范围,输入电压为3.5~15.0 V,当输出电流是10~100 mA时,电压损失是0.334~1.220 V;输入电压为7~12 V时,线性调整率最大值是0.34%,负载调整率最大值是0.9%。

Charge Transfer Properties in MEH-PPV/PS:MWCNTs Nanocomposites

The effect of composition and annealing temperature on charge transfer properties, in a donor/acceptor nanocomposites based on poly (2-methoxy-5-(2-ethyhexyl-oxy)-p-phenylenevinylene) (MEH-PPV) and MWCNTs functionalized with Polystyrene (PS:MWCNTs), have been investigated. The quenching of photoluminescence (PL) intensity of pure MEH-PPV, by adding different amounts of functionalized carbon nanotubes, exhibits that a photoinduced charge transfer has been occurred. Charge transfer efficiency was obtained for an acceptable concentration of PS:MWCNTs about 0.5 wt% and at annealed temperature of about 80℃. Quenching efficiency studies imply that MEH-PPV/PS:MWCNTs nanocomposites reveal a high degree of PL quenching, reaching a value of η = 76.9%.

Refrigerant Control Strategies for Residential Air-Conditioning and Heat-Pump System

This paper simulated the optimal refrigerant charge inventory of a refrigeration system in air-conditioning operation and heat-pump operation respectively,and studied the refrigerant control strategies in this system.The void fraction in two-phase fluid region was calculated by Harms model.And based on distributed parameter model and Harms model,the refrigerant charge inventory in condenser and evaporator were calculated and analyzed in air-conditioning conditions and heat-pump conditions,respectively.The calculating results of different refrigerant mass between refrigeration and heating conditions indicate that the optimal refrigerant charge inventory in heat-pump conditions is lower than that in air-conditioning conditions.To avoid the decrease of COP due to the surplus refrigerant in heating conditions,we introduced the liquid reservoir control method and associate capillary control method.Both of them could increase the heating capacity of the air-source heat pump.The difference of optimal refrigerant charge inventory in air-conditioning and heat-pump system can be controlled by the liquid reservoir or the associate capillary.

Valley-polarized pumping current in zigzag graphene nanoribbons with different spatial symmetries

We numerically investigate the valley-polarized current in symmetric and asymmetric zigzag graphene nanoribbons(ZGNRs) by the adiabatic pump, and the effect of spatial symmetry is considered by introducing different pumping regions. It is found that pumping potentials with the symmetry Vp(x,y) = Vp(-x,y)can generate the largest valleypolarized current. The valley-polarized currents I13~L with the pumping potential symmetry Vp(x,y) =Vp(x,-y,) and I14~L with Vp(x,y) = Vp(-x,-y) of symmetric ZGNRs are much smaller than those of asymmetric ZGNRs. We also find I13~L and I14~L of symmetric ZGNRs decrease and increase with the increasing pumping amplitude, respectively. Moreover, the dephasing effect from the electron-phonon coupling within the Buttiker dephasing scheme is introduced. The valley-polarized current of the symmetric ZGNRs with Vp(x,y)= Vp(x,-y) increases with the increase of the dephasing strength while that with Vp(x,y) = Vp(-x,-y) decreases as the dephasing strength increases.

Nano watermill driven by revolving charge

A novel nanoscale watermill for the unidirectional transport of water molecules through a curved single-walled carbon nanotube（SWNT） is proposed and explored by molecular dynamics simulations. In this nanoscale system, a revolving charge is introduced to drive a water chain confined inside the SWNT, the charge and the tube together serving as a nano waterwheel and nano engine. A resonance-like phenomenon is found, and the revolving frequency of the charge plays a key role in pumping the water chain. The water flux across the SWNT increases with respect to the revolving frequency of the external charge and it reaches its maximum when the frequency is 4 THz. Correspondingly, the number of hydrogen bonds in the water chain inside the SWNT decreases dramatically as the frequency increases from 4 THz to 25 THz. The mechanism behind the resonance phenomenon has been investigated systematically. Our findings are helpful for the design of nanoscale fluidic devices and energy converters.

Spin-current pump in silicene

We report a theoretical study of pumped spin currents in a silicene-based pump device,where two time-dependent staggered potentials are introduced through the perpendicular electric fields and a magnetic insulator is considered in between the two pumping potentials to magnetize the Dirac electrons.It is shown that giant spin currents can be generated in the pump device because the pumping can be optimal for each transport mode,the pumping current is quantized.By controlling the relevant parameters of the device,both pure spin currents and fully spin-polarized currents can be obtained.Our results may shed a new light on the generation of pumped spin currents in Dirac-electron systems.