A Fully Integrated CMOS Readout Circuit for Particle Detectors

Novel schemes for a charge sensitive amplifier （CSA） and a CR-（RC）, semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented. The CSA is designed with poly-resistors as feedback components to reduce noise. Compared with conventional CSA, the input referred equivalent noise charge（ENC） is simulated to be reduced from 5036e to 2381e with a large detector capacitance of 150pF at the cost of 0.5V output swing loss. The CR-（RC）,semi-Gaussian shaper uses MOS transistors in the triode region in series with poly-resistors to compensate process variation without much linearity reduction.

A Low-Noise Readout Circuit for Gyroscopes

In order to suppress the noise of gyroscopes,the method based on lock-in amplifier and capacitor matching of the low-noise readout circuit is proposed. Firstly,the principle to suppress the noise by lock-in amplifier is analyzed,and the noise model of front end is proposed. Secondly,the noise optimization for the charge amplifier is presented according to the noise model of front end. Finally,a readout circuit is constructed by this approach. The measurement results show that the parasitic capacitance of front end is 18 p F,and the noise at resonant frequency( 4 k Hz) is 133 n V / Hz1 / 2,and the overall bias stability is 30° /h,and the noise level is 0. 003° /( s·Hz1 / 2). The noise of the gyroscope with the low-noise readout by this method is suppressed effectively.

A low-noise,high-gain,and large-dynamic-range photodetector based on a JFET and a charge amplifier

We demonstrate a low-noise,high-gain,and large-dynamic-range photodetector(PD)based on a junction field-effect transistor(JFET)and a charge amplifier for the measurement of quantum noise in Bell-state detection(BSD).Particular photodiode junction capacitance allows the silicon N-channel JFET 2sk152 to be matched to the noise requirement for charge amplifier A250.The electronic noise of the PD is effectively suppressed and the signal-to-noise ratio(SNR)is up to 15 dB at the analysis frequency of 2.75 MHz for a coherent laser power of 50.08µW.By combining of the inductor and capacitance,the alternating current(AC)and direct current(DC)branches of the PD can operate linearly in a dynamic range from 25.06µW to 17.50 mW.The PD can completely meet the requirements of SNR and dynamic range for BSD in quantum optics experiments.

A 97 dB dynamic range CSA-based readout circuit with analog temperature compensation for MEMS capacitive sensors

Abstract： This paper presents a charge-sensitive-amplifier （CSA） based readout circuit for capacitive microelectro-mechanical-system （MEMS） sensors. A continuous-time （CT） readout structure using the chopper technique is adopted to cancel the low frequency noise and improve the resolution of the readout circuits. An operational trans-conductance amplifier （OTA） structure with an auxiliary common-mode-feedback-OTA is proposed in the fully differential CSA to suppress the chopper modulation induced disturbance at the OTA input terminal. An analog temperature compensation method is proposed, which adjusts the chopper signal amplitude with temperature variation to compensate the temperature drift of the CSA readout sensitivity. The chip is designed and implemented in a 0.35μm CMOS process and is 2.1 × 2.1 mm2 in area. The measurement shows that the readout circuit achieves 0.9 aF/√H capacitive resolution, 97 dB dynamic range in 100 Hz signal bandwidth, and 0.8 mV/fF sensitivity with a temperature drift of 35 ppm/℃ after optimized compensation.