Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombination centers.

Effects of BTA2 as the third component on the charge carrier generation and recombination behavior of PTB7:PC71BM photovoltaic system

Effects of a benzotriazole(BTA)-based small molecule,BTA2,as the third component on the charge carrier generation and recombination behavior of poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]](PTB7):[6,6]-phenyl-C71-butyric acid methyl ester(PC71BM)organic solar cells(OSCs)were investigated by optical simulation of a transfer matrix model(TMM),photo-induced charge extraction by linearly increasing voltage(photo-CELIV)technique,atomic force microscope(AFM),and the Onsager–Braun model analysis.BTA2 is an A_(2)-A_(1)-D-A_(1)-A_(2)-type non-fullerene small molecule with thiazolidine-2,4-dione,BTA,and indacenodithiophene as the terminal acceptor(A_(2)),bridge acceptor(A_(1)),and central donor(D),respectively.The short-circuit current density of the OSCs with BTA2 can be enhanced significantly owing to a complementary absorption spectrum.The optical simulation of TMM shows that the ternary OSCs exhibit higher internal absorption than the traditional binary OSCs without BTA2,resulting in more photogenerated excitons in the ternary OSCs.The photo-CELIV investigation indicates that the ternary OSCs suffer higher charge trap-limited bimolecular recombination than the binary OSCs.AFM images show that BTA2 aggravates the phase separation between the donor and the acceptor,which is disadvantageous to charge carrier transport.The Onsager-Braun model analysis confirms that despite the charge collection efficiency of the ternary OSCs being lower than that of the binary OSCs,the optimized photon absorption and exciton generation processes of the ternary OSCs achieve an increase in photogenerated current and thus improve power conversion efficiency.

CsPbI nanorods as the interfacial layer for high-performance,all-solution-processed self-powered photodetectors

Heterojunction is regarded as a crucial step toward realizing high-performance devices,particularly,forming gradient energy band between heterojunctions benefits self-powered photodetectors.Therefore,in this paper,the synthesis of CsPbI3 nanorods(NRs)and its application as the interfacial layer in high-performance,all-solution-processed self-powered photodetectors are presented.For the bilayer photodetector ITO/ZnO(100 nm)/PbS-TBAI(150 nm)/Au,a responsivity of 3.6 A/W with a specific detectivity of 9.8×10^(12)Jones was obtained under 0.1 mW/cm^(2)white light illumination at zero bias(i.e.in self-powered mode).Meanwhile,the photocurrent was enhanced to an On/Off current ratio of 105 at zero bias with an open circuit voltage of 0.53 V for trilayer photodetector ITO/ZnO(100 nm)/PbSTBAI(150 nm)/CsPbI3(250 nm)/Au,in which the CsPbI3 NRs layer works as the interfacial layer.As a result,a specific detectivity of 4.5×10^(13)Jones with a responsivity of 11.12 A/W was obtained under0.1 mW/cm^(2) white light illumination,as well as the rising/decaying time of 0.57 s/0.41 s with excellent stability and reproducibility upto four weeks in air.The enhanced-performance is ascribed to the mismatch bandgap between PbS-TBAI/CsPbI_(3)interface,which can suppress the carrier recombination and provide efficient transport passages for charge carriers.Thus,it provides a feasible and efficient method for high-performance photodetectors.