Interface traps generated under hot carrier (HC) stress in LDD nMOST's are monitored by the direct current current voltage (DCIV) measurement technique and charge pumping (CP) technique.The measured and analyzed...Interface traps generated under hot carrier (HC) stress in LDD nMOST's are monitored by the direct current current voltage (DCIV) measurement technique and charge pumping (CP) technique.The measured and analyzed results show that the D peak in DCIV spectrum,which related to the drain region,is affected by a superfluous drain leakage current.The band trap band tunneling current is dominant of this current.展开更多
Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentiona...Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.展开更多
采用真空热蒸镀方法以4,4′-bis(carbazol-9-yl)biphenyl(CBP)为主体材料、以bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′]iridium(acetylacetonate)[(t-bt)2Ir(acac)]磷光染料为掺杂剂构成黄色发光层,制备了高效白光的有机电致...采用真空热蒸镀方法以4,4′-bis(carbazol-9-yl)biphenyl(CBP)为主体材料、以bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′]iridium(acetylacetonate)[(t-bt)2Ir(acac)]磷光染料为掺杂剂构成黄色发光层,制备了高效白光的有机电致发光器件(OLEDs).OLEDs的器件结构为indium tin oxide(ITO)/N,N′-bis-(1-naphthyl)-N,N′-biphenyl-1,1′-biphenyl-4,4′-diamine(NPB)/CBP:(t-bt)2Ir(acac)/NPB/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)/8-hydroxyquinoline aluminum(Alq3)/Mg∶Ag,从ITO阳极开始的第一层NPB为空穴传输层,第二层超薄的NPB为蓝色发光层,BCP为空穴阻挡层和激子阻挡层,Alq3为电子传输层.结果表明,器件电压在3V启亮,在16.5V时,器件的最高亮度达到15460cd·m-2;在4V时,器件达到最大流明效率为7.5lm·W-1,器件启亮后所发出的白光光谱在低电压时随电压变化有稍微的移动,但是都在白光范围内变化.在电压达到8V后Commission Internationale de l′Eclairage(国际照明委员会)(CIE)色坐标为(0.33,0.32),并且光谱及色坐标稳定,不随电压变化而改变,与最佳的白光坐标(0.33,0.33)几乎重合.同时,从机理上解释了光谱移动和效率衰减的原因,并探讨了载流子陷阱和能量传递的关系.展开更多
Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes(SWCNT-TFTs)is essential for further advances to improve the potential for various nanoelectro...Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes(SWCNT-TFTs)is essential for further advances to improve the potential for various nanoelectronic applications.Herein,a comprehensive investigation of the two-dimensional(2D)charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80-300 K.To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs,an empirical equation was derived from a theoretical trapping model,and a carrier velocity distribution was determined from the differentiation of the transient response.Furthermore,charge trapping and de-trapping in shallow-and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate.The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.展开更多
文摘Interface traps generated under hot carrier (HC) stress in LDD nMOST's are monitored by the direct current current voltage (DCIV) measurement technique and charge pumping (CP) technique.The measured and analyzed results show that the D peak in DCIV spectrum,which related to the drain region,is affected by a superfluous drain leakage current.The band trap band tunneling current is dominant of this current.
基金supported by the National Natural Science Foundation of China(Grant No.61376109)the Opening Project of National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component,China(Grant No.ZHD201202)
文摘Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.
文摘采用真空热蒸镀方法以4,4′-bis(carbazol-9-yl)biphenyl(CBP)为主体材料、以bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′]iridium(acetylacetonate)[(t-bt)2Ir(acac)]磷光染料为掺杂剂构成黄色发光层,制备了高效白光的有机电致发光器件(OLEDs).OLEDs的器件结构为indium tin oxide(ITO)/N,N′-bis-(1-naphthyl)-N,N′-biphenyl-1,1′-biphenyl-4,4′-diamine(NPB)/CBP:(t-bt)2Ir(acac)/NPB/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)/8-hydroxyquinoline aluminum(Alq3)/Mg∶Ag,从ITO阳极开始的第一层NPB为空穴传输层,第二层超薄的NPB为蓝色发光层,BCP为空穴阻挡层和激子阻挡层,Alq3为电子传输层.结果表明,器件电压在3V启亮,在16.5V时,器件的最高亮度达到15460cd·m-2;在4V时,器件达到最大流明效率为7.5lm·W-1,器件启亮后所发出的白光光谱在低电压时随电压变化有稍微的移动,但是都在白光范围内变化.在电压达到8V后Commission Internationale de l′Eclairage(国际照明委员会)(CIE)色坐标为(0.33,0.32),并且光谱及色坐标稳定,不随电压变化而改变,与最佳的白光坐标(0.33,0.33)几乎重合.同时,从机理上解释了光谱移动和效率衰减的原因,并探讨了载流子陷阱和能量传递的关系.
基金supported by the National Research Foundation of Korea grant funded by the Korea government(MSIT)(NRF-2021R1A2C2012855).
文摘Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes(SWCNT-TFTs)is essential for further advances to improve the potential for various nanoelectronic applications.Herein,a comprehensive investigation of the two-dimensional(2D)charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80-300 K.To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs,an empirical equation was derived from a theoretical trapping model,and a carrier velocity distribution was determined from the differentiation of the transient response.Furthermore,charge trapping and de-trapping in shallow-and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate.The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.
