We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent pr...We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of Si Ge during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at ＋11 V for 100 us. Meanwhile, the memory device exhibits a large memory window of ~7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 104 s＇ retention. In addition, the leakage current density is lower than 2.52 × 10^（-7） A·cm^（-2） below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si_3N_4 charge trapping layer and the better quality of the interface between the SiO_2 tunneling layer and the Si Ge buried channel. Therefore, the application of the Si Ge buried channel is very promising to construct 3 D charge trapping NAND flash devices with improved operation characteristics.展开更多
On March 31, in accordance with the typical design requirements of the State Grid, the f irst large electric vehicle (EV) charging station, built by the North China Grid,
On April 3, 39 teachers and students from the Beijing Institute of Technology (BIT)were trapped on the MaoerMountain in Fangshan District,a suburban area in Beijing. Morethan 300 persons,
A double-stage start-up structure to limit the inrush current used in current-mode charge pump with wide input range,fixed output and multimode operation is presented in this paper.As a widely utilized power source im...A double-stage start-up structure to limit the inrush current used in current-mode charge pump with wide input range,fixed output and multimode operation is presented in this paper.As a widely utilized power source implement,a Li-battery is always used as the power supply for chips.Due to the internal resistance,a potential drop will be generated at the input terminal of the chip with an input current.A false shut down with a low supply voltage will happen if the input current is too large,leading to the degradation of the Li-battery＇s service life.To solve this problem,the inrush current is limited by introducing a new start-up state.All of the circuits have been implemented with the NUVOTON 0.6 μm CMOS process.The measurement results show that the inrush current can be limited below 1 A within all input supply ranges,and the power efficiency is higher than the conventional structure.展开更多
基金Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007the National Key Research and Development Program of China under Grant No 2016YFA0301701the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112
文摘We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of Si Ge during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at ＋11 V for 100 us. Meanwhile, the memory device exhibits a large memory window of ~7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 104 s＇ retention. In addition, the leakage current density is lower than 2.52 × 10^（-7） A·cm^（-2） below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si_3N_4 charge trapping layer and the better quality of the interface between the SiO_2 tunneling layer and the Si Ge buried channel. Therefore, the application of the Si Ge buried channel is very promising to construct 3 D charge trapping NAND flash devices with improved operation characteristics.
文摘On March 31, in accordance with the typical design requirements of the State Grid, the f irst large electric vehicle (EV) charging station, built by the North China Grid,
文摘On April 3, 39 teachers and students from the Beijing Institute of Technology (BIT)were trapped on the MaoerMountain in Fangshan District,a suburban area in Beijing. Morethan 300 persons,
基金supported by the National Natural Science Foundation of China(No.61106026)
文摘A double-stage start-up structure to limit the inrush current used in current-mode charge pump with wide input range,fixed output and multimode operation is presented in this paper.As a widely utilized power source implement,a Li-battery is always used as the power supply for chips.Due to the internal resistance,a potential drop will be generated at the input terminal of the chip with an input current.A false shut down with a low supply voltage will happen if the input current is too large,leading to the degradation of the Li-battery＇s service life.To solve this problem,the inrush current is limited by introducing a new start-up state.All of the circuits have been implemented with the NUVOTON 0.6 μm CMOS process.The measurement results show that the inrush current can be limited below 1 A within all input supply ranges,and the power efficiency is higher than the conventional structure.
