根据三维Si SOI PIN像素微剂量探测器特性参数,设计了一种基于GF chrt018IC CMOS工艺的前端读出电路。该读出电路主要包括PMOS输入的电荷灵敏前前置放大器,有源整形滤波电路,电压比较器及基准电流源等,可实现对微剂量信号的放大、滤波...根据三维Si SOI PIN像素微剂量探测器特性参数,设计了一种基于GF chrt018IC CMOS工艺的前端读出电路。该读出电路主要包括PMOS输入的电荷灵敏前前置放大器,有源整形滤波电路,电压比较器及基准电流源等,可实现对微剂量信号的放大、滤波降噪、甄别输出等功能。仿真测试表明:能量探测范围为5~500 fC,单通道功耗约为2 mW,总噪声性能为0.05 f C+1.6×10^(-3)fC/pF。展开更多
Abstract： This paper presents a charge-sensitive-amplifier （CSA） based readout circuit for capacitive microelectro-mechanical-system （MEMS） sensors. A continuous-time （CT） readout structure using the chopper te...Abstract： This paper presents a charge-sensitive-amplifier （CSA） based readout circuit for capacitive microelectro-mechanical-system （MEMS） sensors. A continuous-time （CT） readout structure using the chopper technique is adopted to cancel the low frequency noise and improve the resolution of the readout circuits. An operational trans-conductance amplifier （OTA） structure with an auxiliary common-mode-feedback-OTA is proposed in the fully differential CSA to suppress the chopper modulation induced disturbance at the OTA input terminal. An analog temperature compensation method is proposed, which adjusts the chopper signal amplitude with temperature variation to compensate the temperature drift of the CSA readout sensitivity. The chip is designed and implemented in a 0.35μm CMOS process and is 2.1 × 2.1 mm2 in area. The measurement shows that the readout circuit achieves 0.9 aF/√H capacitive resolution, 97 dB dynamic range in 100 Hz signal bandwidth, and 0.8 mV/fF sensitivity with a temperature drift of 35 ppm/℃ after optimized compensation.展开更多
文摘根据三维Si SOI PIN像素微剂量探测器特性参数,设计了一种基于GF chrt018IC CMOS工艺的前端读出电路。该读出电路主要包括PMOS输入的电荷灵敏前前置放大器,有源整形滤波电路,电压比较器及基准电流源等,可实现对微剂量信号的放大、滤波降噪、甄别输出等功能。仿真测试表明:能量探测范围为5~500 fC,单通道功耗约为2 mW,总噪声性能为0.05 f C+1.6×10^(-3)fC/pF。
基金supported by the National Natural Science Foundation of China(No.61106025)the CAS/SAFEA International Partnership Program for Creative Research Teams
文摘Abstract： This paper presents a charge-sensitive-amplifier （CSA） based readout circuit for capacitive microelectro-mechanical-system （MEMS） sensors. A continuous-time （CT） readout structure using the chopper technique is adopted to cancel the low frequency noise and improve the resolution of the readout circuits. An operational trans-conductance amplifier （OTA） structure with an auxiliary common-mode-feedback-OTA is proposed in the fully differential CSA to suppress the chopper modulation induced disturbance at the OTA input terminal. An analog temperature compensation method is proposed, which adjusts the chopper signal amplitude with temperature variation to compensate the temperature drift of the CSA readout sensitivity. The chip is designed and implemented in a 0.35μm CMOS process and is 2.1 × 2.1 mm2 in area. The measurement shows that the readout circuit achieves 0.9 aF/√H capacitive resolution, 97 dB dynamic range in 100 Hz signal bandwidth, and 0.8 mV/fF sensitivity with a temperature drift of 35 ppm/℃ after optimized compensation.
