Preparation of Nano-Particles (Pb,La)TiO_3 Thin Films by Liquid Source Misted Chemical Deposition

Nano particles lanthanum modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO 2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and then annealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60 nm. The deposition speed is 3 nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300 ℃ for 10 min and anneal at 600 ℃ for 1 h.

Peculiarities of ZnCdSe Nanolayers by Chemical Deposition

In this work, the results on the investigation of the precularity near the solar spectrum region, of Zn1.xCdxSe nanofilms, nanoscale heterojunction prepared on silikon and alumminium substrates by precipitation from aqueous solutions are presented. The temperature dependence of dark and light conductivity, spectrum and optical quenching of primary and impurity photoconductivity are investigated. The obtained results show that when controlling ionic composition and HT （heat-treatment） conditions, one can purposely control the properties of Zn1-xCdxSe （0 ≤ x ≤ 0.6） films, achieve the appropriate degree of compensation of different recombination levels and traps attributed to intrinsic defects or impurities, which result in high level of photoelectrical parameters near the IR region. Just after deposition the photoconductivity spectrum maximum of Zn1-xCdxSe （0 〈 x 〈 0.6） films is observed at λ1 = 0.545 ＋ 0.495/am versus the film composition.

Chemical vapor deposition synthesis of intrinsic van der Waals ferroelectric SbSI nanowires

Intrinsic ferroelectric materials play a critical role in the development of high-density integrated device. Despite some two-dimensional (2D) ferroelectrics have been reported, the research on one-dimensional (1D) intrinsic ferroelectric materials remains relatively scare since 1D atomic structures limit their van der Waals (vdW) epitaxy growth. Here, we report the synthesis of 1D intrinsic vdW ferroelectric SbSI nanowires via a confined-space chemical vapor deposition. By precisely controlling the partial vapor pressure of I2 and reaction temperature, we can effectively manipulate kinetics and thermodynamics processes, and thus obtain high quality of SbSI nanowires, which is determined by Raman spectroscopy and high-resolution scanning transmission electron microscopy characterizations. The ferroelectricity in SbSI is confirmed by piezo-response force microscopy measurements and the ferroelectric transition temperature of 300 K is demonstrated by second harmonic generation. Moreover, the in-plane polarization switching can be maintained in the thin SbSI nanowires with a thickness of 20 nm. Our prepared 1D vdW ferroelectric SbSI nanowires not only enrich the vdW ferroelectric systems, but also open a new possibility for high-power energy storage nanodevices.

Edge effect during microwave plasma chemical vapor deposition diamond-film:Multiphysics simulation and experimental verification

This study focused on the investigation of the edge effect of diamond films deposited by microwave plasma chemical vapor de-position.Substrate bulge height△h is a factor that affects the edge effect,and it was used to simulate plasma and guide the diamond-film deposition experiments.Finite-element software COMSOL Multiphysics was used to construct a multiphysics(electromagnetic,plasma,and fluid heat transfer fields)coupling model based on electron collision reaction.Raman spectroscopy and scanning electron microscopy were performed to characterize the experimental growth and validate the model.The simulation results reflected the experimental trends observed.Plasma discharge at the edge of the substrate accelerated due to the increase in△h(△h=0-3 mm),and the values of electron density(n_(c)),molar concentration of H(C_(H)),and molar concentration of CH_(3)(C_(CH_(3)))doubled at the edge(for the special concave sample with△h=−1 mm,the active chemical groups exhibited a decreased molar concentration at the edge of the substrate).At=0-3 mm,a high diamond growth rate and a large diamond grain size were observed at the edge of the substrate,and their values increased with.The uniformity of film thickness decreased with.The Raman spectra of all samples revealed the first-order characteristic peak of dia-mond near 1332 cm^(−1).When△h=−1 mm,tensile stress occurred in all regions of the film.When△h=1-3 mm,all areas in the film ex-hibited compressive stress.

Fabrication of Graphene/Cu Composite by Chemical Vapor Deposition and Effects of Graphene Layers on Resultant Electrical Conductivity

Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the problem of how to control graphene to form desired Gr/Cu composite is not well solved. This paper aims at exploring the best parameters for preparing graphene with different layers on Cu foil by chemical vapor deposition(CVD)method and studying the effects of different layers graphene on Gr/Cu composite’s electrical conductivity. Graphene grown on single-sided and double-sided copper was prepared for Gr/Cu and Gr/Cu/Gr composites. The resultant electrical conductivity of Gr/Cu composites increased with decreasing graphene layers and increasing graphene volume fraction. The Gr/Cu/Gr composite with monolayer graphene owns volume fraction of less than 0.002%,producing the best electrical conductivity up to59.8 ×10^(6)S/m,equivalent to 104.5% IACS and 105.3% pure Cu foil.

Uniform deposition of ultra-thin TiO_(2) film on mica substrate by atmospheric pressure chemical vapor deposition: Effect of precursor concentration

The performance of pearlescent pigment significantly affected by the grain size and the roughness of deposited film. The effect of TiCl_(4) concentration on the initial deposition of TiO_(2) on mica by atmospheric pressure chemical vapor deposition(APCVD) was investigated. The precursor concentration significantly affected the deposition and morphology of TiO_(2) grains assembling the film. The deposition time for fully covering the surface of mica decreased from 120 to 10 s as the TiCl_(4) concentration increased from 0.38%to 2.44%. The grain size increased with the TiCl_(4) concentration. The AFM and TEM analysis demonstrated that the aggregation of TiO_(2) clusters at the initial stage finally result to the agglomeration of fine TiO_(2) grains at high TiCl_(4) concentrations. Following the results, it was suggested that the nucleation density and size was easy to be adjusted when the TiCl_(4) concentration is below 0.90%.

Jet formation and penetration performance of a double-layer charge liner with chemically-deposited tungsten as the inner liner

This paper proposes a type of double-layer charge liner fabricated using chemical vapor deposition(CVD)that has tungsten as its inner liner.The feasibility of this design was evaluated through penetration tests.Double-layer charge liners were fabricated by using CVD to deposit tungsten layers on the inner surfaces of pure T2 copper liners.The microstructures of the tungsten layers were analyzed using a scanning electron microscope(SEM).The feasibility analysis was carried out by pulsed X-rays,slug-retrieval test and static penetration tests.The shaped charge jet forming and penetration law of inner tungsten-coated double-layer liner were studied by numerical simulation method.The results showed that the double-layer liners could form well-shaped jets.The errors between the X-ray test results and the numerical results were within 11.07%.A slug-retrieval test was found that the retrieved slug was similar to a numerically simulated slug.Compared with the traditional pure copper shaped charge jet,the penetration depth of the double-layer shaped charge liner increased by 11.4% and>10.8% respectively.In summary,the test results are good,and the numerical simulation is in good agreement with the test,which verified the feasibility of using the CVD method to fabricate double-layer charge liners with a high-density and high-strength refractory metal as the inner liner.

Controllable growth of wafer-scale PdS and PdS_(2) nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

Palladium(Pd)-based sulfides have triggered extensive interest due to their unique properties and potential applications in the fields of electronics and optoelectronics.However,the synthesis of large-scale uniform PdS and PdS_(2)nanofilms(NFs)remains an enormous challenge.In this work,2-inch wafer-scale PdS and PdS_(2) NFs with excellent stability can be controllably prepared via chemical vapor deposition combined with electron beam evaporation technique.The thickness of the pre-deposited Pd film and the sulfurization temperature are critical for the precise synthesis of PdS and PdS_(2) NFs.A corresponding growth mechanism has been proposed based on our experimental results and Gibbs free energy calculations.The electrical transport properties of PdS and PdS_(2) NFs were explored by conductive atomic force microscopy.Our findings have achieved the controllable growth of PdS and PdS_(2) NFs,which may provide a pathway to facilitate PdS and PdS_(2) based applications for next-generation high performance optoelectronic devices.

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900℃in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 - 20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% - 80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations.

Pinus sylvestris and Picea abies canopy effects on deposition of air pollutants

Tree canopies influence atmospheric pollutant depositions depending on type,ecosystem characteristics,and local climatic conditions.This study investigated the impact of Pinus sylvestris L.and Picea abies(L.)H.Karst.,and a mixture of both,on the chemical composition of pre-cipitation.Three permanent plots within the ICP forest level Ⅱ monitoring network in Lithuania were selected to illustrate typical hemiboreal coniferous forests.The study analysed(1)the concentrations of NO_(2),NH_(3) and SO_(2) in the ambi-ent air;(2)the concentrations of SO_(4)^(2−),NO_(3)^(−),NH_(4)^(+),Na^(+),K^(+),Ca^(2+) and Cl^(-) in throughfall beneath canopies and in precipitation collected in an adjacent field,and(3)S and total N,Na^(+),K^(+),Ca^(2+)and Cl−depositions in throughfall and precipitation over 2006-2022.Results show a signifi-cant decrease in SO_(2) emissions in the ambient air;NO_(2) and NH_(3) emissions also decreased.The canopies reduced the acidity of throughfall,although they led to notably higher concentrations of SO_(4)^(2−),NO_(3)^(−),Na^(+),and particularly K^(+).During the study,low variability in NO_(3)^(-)deposition and a decrease in NH_(4)^(+)deposition occurred.Deposition loads increased by 20-30%when precipitation passed through the canopy.The cumulative deposition of S,Cl,Na,K,Ca,and N was greater under P.abies than under P.sylvestris.How-ever,K deposition in throughfall was considerably lower under P.sylvestris compared to the P.abies or mixed stand.Throughfall S depositions declined across all three coniferous plots.Overall,there was no specific effect of tree species on throughfall chemistry.

Modification of ACFs by chemical vapor deposition and its application for removal of methyl orange from aqueous solution

Viscose activated carbon fibers （ACFs） were characterized using specific surface area, scanning electron modified with chemical vapor deposition （CVD）. The samples were microscopy （SEM）, pore size distribution and Fourier transform infrared spectroscopy （FTIR）. Batch adsorption experiments were carried out to investigate the adsorption behavior of modified ACFs for methyl orange（MO） from its aqueous solutions. The results show that the adsorption isotherms of MO onto modified ACFs well follows the Langmuir isotherm equation. The adsorption kinetics of MO can be well described by the pseudo second-order kinetic model. The adsorption process involves the intra-particle diffusion, but is not the only rate-controlling step. Thermodynamic parameters including AG, AH and AS were calculated, suggesting that the adsorption of MO onto modified ACFs is a spontaneous, exothermic and physisorption process. FTIR result indicates that the major adsorption mechanism of modified ACFs for MO is hydrogen bond.

Production of HfO_2 thin films using different methods: chemical bath deposition, SILAR and sol–gel process

Hafnium oxide thin films （HOTFs） were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction （SILAR）, and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300℃ in an oven （ambient conditions）. After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffTaction （XRD）. The optical properties are investigated using the ultraviolet-visible （UV-VIS） spectroscopic technique. The film thickness was measured via atomic force microscopy （AFM） in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy （EDX）. The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.

In situ Chemical Deposition of Polyaniline on Activated Carbon for Electrochemical Capacitors

Polyaniline （PA） film was chemically deposited onto the surface of activated carbon （AC） uniformly. Chemical deposition was carried out in 0.1 mol/L aniline plus 0.5 mol/L H2SO4 solution adopting V2O5·nH2O coated on the surface of activated carbon as oxidant. The surface morphologies and structures of the composite materials were characterized by scanning electron microscopy and FT-IR spectra. The electrochemical properties of the composite material electrodes were studied by cyclic voltammetry and constant current charge/discharge tests in 1 molFL H2SO4 solutions. The specific capacitance of composite materials was exhibited as high as 237.5 F/g at a current density of 1.0 A/g compared with a value of 120 F/g for pure carbon electrode. Good power characteristic and good stability of composite electrodes were also demonstrated.

Nonpolar a-plane light-emitting diode with an in-situ SiN_x interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/（V· s） and 460 Ω/respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electrolurninescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.

Uniform small metal nanoparticles anchored on CeO2 nanorods driven by electroless chemical deposition

We report a facile electroless chemical deposition(ECD)method to deposit uniform Pd nanoparticles((2.5±0.6)nm)on CeO2 nanorods(PdNPs/CeO2-ECD)through the interface redox reaction between the reduced CeO2 and Na2PdCl4.Pd NPs/CeO2-ECD exhibits a stronger electronic metal-support interaction(EMSI)evidenced by higher reducibility and stronger anti-sintering capability at high temperatures,compared to that prepared by the conventional impregnation method.Such an EMSI effect of PdNPs/CeO2-ECD significantly improves its catalytic activity in CO oxidation.Besides,the chlorine residue-free catalysts through ECD process avoid the deleterious effect of chlorine on CO oxidation.This ECD process can further be extended to deposit various uniform nanoscaled noble metals(Au,Ag,Pt,Ru,Rh,etc.)on CeO2,which may deliver their potentials in advanced catalysis.

Si-doped diamond films prepared by chemical vapour deposition

The effects of Si doping on morphology, components and structure characteristics of CVD diamond films were studied. Si-doped CVD diamond films were deposited on Si substrate by adding tetraethoxysilane （TEOS） into acetone as source of reactant gas. The morphology and microstructure of diamond films were characterized by scanning electron microcopy （SEM）. The crystalline quality of diamond films was studied by Raman spectroscopy and X-ray diffractometry （XRD）. The surface roughness of the films was evaluated with surface profilometer. The results suggest that Si doping tends to reduce the crystallite size, enhance grain refinement and inhibit the appearance of （11 I） facets. Raman spectra indicate that Si doping can enhance the formation of sp2 phase in diamond films. Moreover, Raman signal of SiC was detected, which suggests the existence of Si in the diamond films. Smooth fine-grained diamond （SFGD） film was synthesized at Si to C ratio of 1%.

Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition

ZnO thin films were grown on GaAs （001） substrates by metal-organic chemical vapor deposition （MOCVD） at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precursor, respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement （XRD） results indicated that all the thin films were grown with highly c- axis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy （SEM） image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge （3. 33eV） emissions with little or no deep-level e- mission related to defects.

Disproportionation of Toluene by Modified ZSM-5 Zeolite Catalysts with High Shape-selectivity Prepared Using Chemical Liquid Deposition with Tetraethyl Orthosilicate

Shape-selective catalysts for the disproportionation of toluene were prepared by the modification of the cylinder-shaped ZSM-5 zeolite extrudates with chemical liquid deposition with TEOS （tetraethyl orthosilicate）.Various parameters for preparing catalysts were changed to investigate the suitable conditions.The resulting cata-lysts were tested in a pressured fixed bed reactor and characterized by SEM （scanning electron microscopy）.The conversion of toluene and para-xylene selectivity were influenced remarkably by the n（SiO2）/n（Al2O3） ratio of ZSM-5 zeolite,the type and amount of deposition agent,acid and solvent used,and the time and cycle of deposition treatment.TEOS was proved to be a more efficient agent than the conventional polysiloxanes when the deposition amount was low.The catalyst prepared at the suitable conditions exhibited a high para-xylene selectivity of 91.1% with considerable high conversion of 25.6%.SEM analyses confirmed the formation of a layer of amorphous silica on the external surface of ZSM-5 zeolie crystals,which was responsible for the highly enhanced shape-selectivity.

Two Step Chemical Vapor Deposition of In2Se3/MoSe2 van der Waals Heterostructures

Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.

Technical Challenges and Progress in Fluidized Bed Chemical Vapor Deposition of Polysilicon

Various methods for production of polysilicon have been proposed for lowering the production cost andenergy consumption, and enhancing productivity, which are critical for industrial applications. The fluidized bed chemical vapor deposition （FBCVD） method is a most promising alternative to conventional ones, but the homogeneous reaction of silane in FBCVD results in unwanted formation of fines, which will affect the product qualityand output. There are some other problems, such as heating degeneration due to undesired polysilicon deposition on the walls of the reactor and the heater. This article mainly reviews the technological development on FBCVD of polycrystalline silicon and the research status for solving the above problems. It also identifies a number of challenges to tackle and principles should be followed in the design ofa FBCVD reactor.