Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbo...Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system抯 pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al2(SO4)3]=0.0837 molL-1, [NaHCO3]=0.214 molL-1, 15 ℃. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy, Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.展开更多
Two-dimensional(2D)transition-metal dichalcogenide materials(TMDs)alloys have a wide range of applications in the field of optoelectronics due to their capacity to achieve wide modulation of the band gap with fully tu...Two-dimensional(2D)transition-metal dichalcogenide materials(TMDs)alloys have a wide range of applications in the field of optoelectronics due to their capacity to achieve wide modulation of the band gap with fully tunable compositions.However,it is still a challenge for growing alloys with uniform components and large lateral size due to the random distribution of the crystal nucleus locations.Here,we applied a simple but effective promoter assisted liquid phase chemical vapor deposition(CVD)method,in which the quantity ratio of promoter to metal precursor can be controlled precisely,leading to tiny amounts of transition metal oxide precursors deposition onto the substrates in a highly uniform and reproducible manner,which can effectively control the uniform distribution of element components and nucleation sites.By this method,a series of monolayer Nb_(1−x)W_(x)Se_(2)alloy films with fully tunable compositions and centimeter scale have been successfully synthesized on sapphire substrates.This controllable approach opens a new way to produce large area and uniform 2D alloy film,which has the potential for the construction of optoelectronic devices with tailored spectral responses.展开更多
文摘Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system抯 pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al2(SO4)3]=0.0837 molL-1, [NaHCO3]=0.214 molL-1, 15 ℃. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy, Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.
基金the National Science Foundation of China(Nos.61922005 and U1930105)the Beijing Municipal Natural Science Foundation(No.JQ20027)+2 种基金The National Natural Science Foundation of China(No.62005003)The General Program of Science and Technology Development Project of Beijing Municipal Education Commission(No.KM202110005008)The Basic Research Foundation of Beijing University of Technology(No.048000546320504).
文摘Two-dimensional(2D)transition-metal dichalcogenide materials(TMDs)alloys have a wide range of applications in the field of optoelectronics due to their capacity to achieve wide modulation of the band gap with fully tunable compositions.However,it is still a challenge for growing alloys with uniform components and large lateral size due to the random distribution of the crystal nucleus locations.Here,we applied a simple but effective promoter assisted liquid phase chemical vapor deposition(CVD)method,in which the quantity ratio of promoter to metal precursor can be controlled precisely,leading to tiny amounts of transition metal oxide precursors deposition onto the substrates in a highly uniform and reproducible manner,which can effectively control the uniform distribution of element components and nucleation sites.By this method,a series of monolayer Nb_(1−x)W_(x)Se_(2)alloy films with fully tunable compositions and centimeter scale have been successfully synthesized on sapphire substrates.This controllable approach opens a new way to produce large area and uniform 2D alloy film,which has the potential for the construction of optoelectronic devices with tailored spectral responses.
