Technology Development and Production of Certain Chemical Platinum Metals Compounds at JSC ＂Krastsvetmet＂

In recent years JSC "Krastsvetmet" has successfully developed the production of chemically pure compounds of precious metals.Currently methods have been developed and facilities have been provided for industrial production of the following platinum metals compounds:Rhodium(Ⅲ) chloride hydrate,rhodium(Ⅲ) chloride solution,rhodium(Ⅲ) nitrate solution,rhodium(Ⅲ) iodide,rhodium(Ⅲ) sulfate,hydrated rhodium(Ⅲ) oxide,ammonium hexachlororodiate,rhodium(Ⅲ) phosphate solution,rhodium electrolytes;Iridium(Ⅳ) chloride hydrate,iridium(Ⅲ) chloride hydrate,ammonium hexachloroiridate(Ⅳ),hexa chloriridium acid solution,hexachloriridium crystalline acid;Ruthenium(Ⅲ) chloride hydrate,ruthenium(Ⅳ) hydroxide chloride,ruthenium(Ⅳ) hydroxide chloride solution,ammonium hexachlororuthenate,ruthenium(Ⅲ) chloride solution,potassium,diaquaoctachloronitrido diruthenate.The quality of the production meets the requirements of Russian and foreign consumers.

A study on chemical forms of heavy metals in the sediments of Zhujiang River and its estuary

The five chemical bound forms of Fe, Al and Mn in sediments in the main channel of the Zhujiang River.and its estuary, namely, exchangeable, carbonic, oxidative, organic and residual (in crystal) forms, were determined. The method of sequential extraction was used for separating the five bound forms.The main chemical form of the three elements in the sediments of the Zhujiang River and its estuarine zone is the residual one. The exchangeable form exists only in a small fraction.Correlationships between the concentration of a certain form of heavy metals and Eh. pH and salinity were discussed. The principles of geochemistry are used to explain the mechanism of heavy metal transport in the river.It was also found that the distribution rule of the chemical forms of Fe, Al and Mn in sediments in the lower reaches of the Zhujiang River was similar to the one in the lower reaches of the Yamaska River.

In-situ wafer bowing measurements of GaN grown on Si(111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition（MOCVD） system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses（tensile and compressive） during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, Ga N grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded Al Ga N buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method.

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated.

Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition

CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.

Chemical, mechanical, and thermal expansion properties of a carbon nanotube-reinforced aluminum nanocomposite

In the present study,the chemical and mechanical properties and the thermal expansion of a carbon nanotube（CNT）-based crystalline nano-aluminum（nano Al） composite were reported.The properties of nanocomposites were tailored by incorporating CNTs into the nano Al matrix using a physical mixing method.The elastic moduli and the coefficient of thermal expansion（CTE） of the nanocomposites were also estimated to understand the effects of CNT reinforcement in the Al matrix.Microstructural characterization of the nanocomposite reveals that the CNTs are dispersed and embedded in the Al matrix.The experimental results indicate that the incorporation of CNTs into the nano Al matrix results in the increase in hardness and elastic modulus along with a concomitant decrease in the coefficient of thermal expansion The hardness and elastic modulus of the nanocomposite increase by 21%and 20%,respectively,upon CNT addition.The CTE of CNT/A1 nanocomposite decreases to 70%compared with that of nano Al.

Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

We report the growth of Al N epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition（MOCVD）. The sources of trimethylaluminium（TMAl） and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of Al N epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction（HRXRD） measurement showed that the full width at half maximum（FWHM） of the（0002） and（10-12） reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square（RMS） roughness was lower to 0.2 nm as tested by atomic force microscope（AFM）. The growth process of Al N epilayers was discussed in terms of crystalline quality, surface morphology,and residual stress.

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 x 10^13 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cruZ/V-s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices.

Metal Organic Chemical Vapour Deposited Thin Films of Cobalt Oxide Prepared via Cobalt Acetylacetonate

The single solid source precursor, cobalt （Ⅱ） acetylacetonate was prepared and characterized by infrared spectroscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis （metal organic chemical vapour deposition （MOCVD）） of single solid source precursor, cobalt acetylacetonate, Co[C5H7O2]2 at a temperature of 420℃. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction （XRD）, showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2,15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron microscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than i micron for the deposited thin films of cobalt oxide.

Improved Semipolar(11(2|-)2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN_x Interlayer

The effect of a self-organized SiNs interlayer on the defect density of （1122） semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-ray diffrac- tion. The SiNx interlayer reduces the c-type dislocation density from 2.5 ×10^10 cm^-2 to 5 ×10^8 cm 2. The SiNx interlayer produces regions that are free from basal plane stacking faults （BSFs） and dislocations. The overall BSF density is reduced from 2.1×10^5 cm-1 to 1.3×10^4 cm^-1. The large dislocations and BSF reduction in semipolar （1122） GaN with the SiNx, interlayer result from two primary mechanisms. The first mechanism is the direct dislocation blocking by the SiNx interlayer, and the second mechanism is associated with the unique structure character of （1122） semipolar GaN.

GaInP/GaInAs/GaInNAs/Ge Four-Junction Solar Cell Grown by Metal Organic Chemical Vapor Deposition with High Efficiency

We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GalnNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GalnNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GalnNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GalnP/GalnAs/Ge solar cells under the 1 sun AMO spectrum.

Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.

High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition

Orthogonal experiments of Ga Sb films growth on Ga As（001） substrates have been designed and performed by using a low-pressure metal–organic chemical vapor deposition（LP-MOCVD） system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized Ga Sb thin film has a narrow full width at half maximum（358 arc sec） of the（004） ω-rocking curve, and a smooth surface with a low root-mean-square roughness of about 6 nm, which is typical in the case of the heteroepitaxial single-crystal films. In addition, we studied the effects of layer thickness of Ga Sb thin film on the density of dislocations by Raman spectra. It is believed that our research can provide valuable information for the fabrication of high-crystalline Ga Sb films and can promote the integration probability of mid-infrared devices fabricated on mainstream performance electronic devices.

Quantum cascade lasers grown by MOCVD

Sharing the advantages of high optical power,high efficiency and design flexibility in a compact size,quantum cascade lasers(QCLs)are excellent mid-to-far infrared laser sources for gas sensing,infrared spectroscopic,medical diagnosis,and defense applications.Metalorganic chemical vapor deposition(MOCVD)is an important technology for growing high quality semiconductor materials,and has achieved great success in the semiconductor industry due to its advantages of high efficiency,short maintenance cycles,and high stability and repeatability.The utilization of MOCVD for the growth of QCL materials holds a significant meaning for promoting the large batch production and industrial application of QCL devices.This review summarizes the recent progress of QCLs grown by MOCVD.Material quality and the structure design together determine the device performance.Research progress on the performance improvement of MOCVD-grown QCLs based on the optimization of material quality and active region structure are mainly reviewed.

Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process

This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting in an extremely low contact resistance of 0.102Ω·mm between n^(+)-InGaN and InAlN/GaN channels.Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts.Then,the diffusion mechanism between n^(+)-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations,which could benefit the further process optimization.

Analysis and design of resistance-wire heater in MOCVD reactor

Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.

Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template

The high power GaN-based blue light emitting diode(LED) on an 80-μm-thick GaN template is proposed and even realized by several technical methods like metal organic chemical vapor deposition(MOCVD), hydride vapor-phase epitaxial(HVPE), and laser lift-off(LLO). Its advantages are demonstrated from material quality and chip processing. It is investigated by high resolution X-ray diffraction(XRD), high resolution transmission electron microscope(HRTEM), Rutherford back-scattering(RBS), photoluminescence, current-voltage and light output-current measurements. The width of(0002) reflection in XRD rocking curve, which reaches 173 for the thick GaN template LED, is less than that for the conventional one, which reaches 258. The HRTEM images show that the multiple quantum wells(MQWs) in 80-μmthick GaN template LED have a generally higher crystal quality. The light output at 350 mA from the thick GaN template LED is doubled compared to traditional LEDs and the forward bias is also substantially reduced. The high performance of 80-μm-thick GaN template LED depends on the high crystal quality. However, although the intensity of MQWs emission in PL spectra is doubled, both the wavelength and the width of the emission from thick GaN template LED are increased. This is due to the strain relaxation on the surface of 80-μm-thick GaN template, which changes the strain in InGaN QWs and leads to InGaN phase separation.

Hydrogen Adsorption Study upon Ni/AI203 Nano-composite Synthesized by MOCVD Technique

The hydrogen adsorption （storage） studies upon Ni/A1203 nano-composite prepared by metal organic chemical vapor deposition technique （MOCVD） exploiting single source molec ular precursor （SSP） approach were carried out. The Ni/A1203 nano-composite is prepared in cold walled MOCVD reactor by the decomposition of SSP, [H2AI（OtBu）]2, on a substrate holding Ni（acac）2 powder. The SSP is a reducing agent which reduces Ni＋2 to Ni0 and works as source for Al203 matrix in which the Ni0 is dispersed. The resulting Ni/A1203 nano-composite is characterized by XRD, SEM, TEM, and EDX. The hydrogen adsorption （storage） studies are performed using home-made Sievert＇s type apparatus. The hydrogen storage studies reveal that approximately 2.9% （mass ratio） hydrogen can be stored in the Ni/A1203 nano-composite. The results show that Ni/A1203 nano-composite can be a po- tential candidate for hydrogen storage which can be used for onboard fuel purposes.

Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization

Nonpolar a-plane GaN epilayers are grown on several r-plane sapphire substrates by metal organic chemical vapour deposition using different nucleation layers： （A） a CaN nucleation layer deposited at low temperature （LT）; （B） an A1N nucleation layer deposited at high temperature; or （C） an LT thin AIN nucleation layer with an AIN layer and an A1N/A1CaN superlattice both subsequently deposited at high temperature. The samples have been characterized by Xray diffraction （XRD）, atomic force microscopy and photoluminescence. The GaN layers grown using nucleation layers B and C show narrower XRD rocking curves than that using nucleation layer A, indicating a reduction in crystal defect density. Furthermore, the GaN layer grown using nucleation layer C exhibits a surface morphology with triangular defect pits eliminated completely. The improved optical property, corresponding to the enhanced crystal quality, is also confirmed by temperature-dependent and excitation power-dependent photoluminescence measurements.

Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

InGaN/GaN multiple quantum well （MQW） solar cells with stepped-thickness quantum wells （SQW） are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density （Jsc） and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G （100 mW/cm2）. In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented.