Two Step Chemical Vapor Deposition of In2Se3/MoSe2 van der Waals Heterostructures

Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.

Uniform deposition of ultra-thin TiO_(2) film on mica substrate by atmospheric pressure chemical vapor deposition: Effect of precursor concentration

The performance of pearlescent pigment significantly affected by the grain size and the roughness of deposited film. The effect of TiCl_(4) concentration on the initial deposition of TiO_(2) on mica by atmospheric pressure chemical vapor deposition(APCVD) was investigated. The precursor concentration significantly affected the deposition and morphology of TiO_(2) grains assembling the film. The deposition time for fully covering the surface of mica decreased from 120 to 10 s as the TiCl_(4) concentration increased from 0.38%to 2.44%. The grain size increased with the TiCl_(4) concentration. The AFM and TEM analysis demonstrated that the aggregation of TiO_(2) clusters at the initial stage finally result to the agglomeration of fine TiO_(2) grains at high TiCl_(4) concentrations. Following the results, it was suggested that the nucleation density and size was easy to be adjusted when the TiCl_(4) concentration is below 0.90%.

Investigation of Single-Wall MoS_2 Monolayer Flakes Grown by Chemical Vapor Deposition

Recently, two-dimensional monolayer molybdenum disulfide(MoS_2), a transition metal dichalcogenide, has received considerable attention due to its direct bandgap, which does not exist in its bulk form, enabling applications in optoelectronics and also thanks to its enhanced catalytic activity which allows it to be used for energy harvesting. However,growth of controllable and high-quality monolayers is still a matter of research and the parameters determining growth mechanism are not completely clear. In this work, chemical vapor deposition is utilized to grow monolayer MoS_2 flakes while deposition duration and temperature effect have been systematically varied to develop a better understanding of the MoS_2 film formation and the influence of these parameters on the quality of the monolayer flakes. Different from previous studies, SEM results show that single-layer MoS_2 flakes do not necessarily grow flat on the surface, but rather they can stay erect and inclined at different angles on the surface, indicating possible gas-phase reactions allowing for monolayer film formation. We have also revealed that process duration influences the amount of MoO_3/MoO_2 within the film network. The homogeneity and the number of layers depend on the change in the desorption–adsorption of radicals together with sulfurization rates, and, inasmuch, a careful optimization of parameters is crucial. Therefore, distinct from the general trend of MoS_2 monolayer formation, our films are rough and heterogeneous with monolayer MoS_2 nanowalls. Despite this roughness and the heterogeneity, we observe a strong photoluminescence located around 675 nm.

Characterization of atomic-layer MoS_2 synthesized using a hot filament chemical vapor deposition method

Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy（AFM）, x-ray diffraction（XRD）, high-resolution transition electron microscopy（HRTEM）, photoluminescence（PL）, and x-ray photoelectron spectroscopy（XPS） characterization methods is applied to investigate the crystal structures, valence states, and compositions of the ultrathin film areas. The nucleation particles show irregular morphology, while for a larger size somewhere, the films are granular and the grains have a triangle shape. The films grow in a preferred orientation（002）. The HRTEM images present the graphene-like structure of stacked layers with low density of stacking fault, and the interlayer distance of plane is measured to be about 0.63 nm. It shows a clear quasihoneycomb-like structure and 6-fold coordination symmetry. Room-temperature PL spectra for the atomic layer MoS_2 under the condition of right and left circular light show that for both cases, the A1 and B1 direct excitonic transitions can be observed. In the meantime, valley polarization resolved PL spectra are obtained. XPS measurements provide high-purity samples aside from some contaminations from the air, and confirm the presence of pure MoS_2. The stoichiometric mole ratio of S/Mo is about 2.0–2.1, suggesting that sulfur is abundant rather than deficient in the atomic layer MoS_2 under our experimental conditions.

Fabrication of Graphene/Cu Composite by Chemical Vapor Deposition and Effects of Graphene Layers on Resultant Electrical Conductivity

Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the problem of how to control graphene to form desired Gr/Cu composite is not well solved. This paper aims at exploring the best parameters for preparing graphene with different layers on Cu foil by chemical vapor deposition(CVD)method and studying the effects of different layers graphene on Gr/Cu composite’s electrical conductivity. Graphene grown on single-sided and double-sided copper was prepared for Gr/Cu and Gr/Cu/Gr composites. The resultant electrical conductivity of Gr/Cu composites increased with decreasing graphene layers and increasing graphene volume fraction. The Gr/Cu/Gr composite with monolayer graphene owns volume fraction of less than 0.002%,producing the best electrical conductivity up to59.8 ×10^(6)S/m,equivalent to 104.5% IACS and 105.3% pure Cu foil.

Nucleation mechanism and morphology evolution of MoS_2 flakes grown by chemical vapor deposition

We study the nucleation mechanism and morphology evolution of MoS2 flakes grown by chemical vapor deposition （CVD） on SiO2/Si substrates with using S and MoO3 powders. The MoS2 flake is of monolayer with triangular nucleation, which might arise from the initial MoO3-x that is deposited on the substrate, and then bonded with S to form MoS2 flake. The ratio of Mo and S is higher than 1：2 at the beginning with Mo terminated triangular nucleation formed. After that, the morphology of MoS2 flake evolves from triangle to similar hexagon, then to truncated triangle which is determined by the faster growth speed of Mo termination than that of S termination under the S rich environment. The nucleation density does not increase linearly with the increase of reactant concentration, which could be explained by the two-dimensional nucleation theory.

Monolayer MoS_(2)of high mobility grown on SiO_(2)substrate by two-step chemical vapor deposition

We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of the pre-synthesized Mo O_(3)flakes on the mica substrate compared to Mo O_(3)powder could dramatically reduce the consumption of the Mo source.The electronic information inferred from the four-probe scanning tunneling microscope(4P-STM)image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements.Furthermore,the direct van der Pauw transport also confirms its relatively high carrier mobility.Our study provides a reliable method to synthesize high-quality Mo S_(2)monolayer,which is confirmed by the direct 4P-STM measurement results.Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides(TMDs)on the Si O_(2)substrate and is essential to further development of the TMDs-related integrated devices.

Poisoning of MoO_3 Precursor on Monolayer MoS_2 Nanosheets Growth by Tellurium-Assisted Chemical Vapor Deposition

We obtain molybdenum disulfide （MoS2） nanosheets （NSs） with edge sizes of 18μm by direct sulfuration of MoO3 powder spread on the SiO2/Si substrates. However, the undesirable MoO3 nanoparticles （NPs） left on the surface of MoS22 NSs poison the MoO3 precursor. Introducing Te vapors to react with MoS2 to form low melting point intermediate MoSxTe2-x, the evaporations of MoO3 precursor recover and MoO3 NPs disappear. Thus Te vapor is effective to suppress poisoning of the MoO3 precursor. Selecting the appropriate amount of Te vapor, we fabricate monolayer MoS22 NSs up to 70μm in edge length. This finding can be significant to understand the role of Te in the Te-assisted chemical vapor deposition growth process of layered chalcogenide materials.

Science Letters:Development of supported boron-doping TiO_2 catalysts by chemical vapor deposition

In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. Boron atoms were successfully doped into the lattice of TiO2 through CVD, as evidenced from XPS analysis. B-doped TiO2 coating catalysts showed drastic and strong absorption in the visible light range with a red shift in the band gap transition. This novel B-TiO2 coating photocatalyst showed higher photocatalytic activity in methyl orange degradation under visible light irradiation than that of the pure TiO2 photocatalyst.

Fibrous TiO_2 prepared by chemical vapor deposition using activated carbon fibers as template via adsorption,hydrolysis and calcinations

TiO2 fibers were prepared via alternatively introducing water vapor and Ti precursor carried by N2 to an APCVD （chemical vapor deposition under atmospheric pressure） reactor at ≤200 ℃. Activated carbon fibers （ACFs） were used as templates for deposition and later removed by calcinations. The obtained catalysts were characterized by scanning electron micros- copy （SEM）, transmission electron microscopy （TEM）, Brunauer, Emmett and Teller （BET） and X-ray diffraction （XRD） analysis The pores within TiO2 fibers included micro-range and meso-range, e.g., 7 nm, and the specific surface areas for TiO2 fibers were 141 m^2/g and 148 m^2/g for samples deposited at 100 ℃ and 200℃ （using ACFI700 as template）, respectively. The deposition temperature significantly influenced TiO2 morphology. The special advantages of this technique for preparing porous nano-material include no consumption of organic solvent in the process and easy control of deposition conditions and speeds.

The Effect of Pressure on the Dissociation of H_2/CH_4Gas Mixture during Diamond Films Growth via Chemical Vapor Deposition

Monte Carlo simulations are adopted to study the electron motion in the mixture of H2 and CH4 during diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD). The non-uniform electric field is used and the avalanche of electrons is taken into account in this simulation. The average energy distribution of electrons and the space distribution of effective species such as CH3, CH+3, CH+ and H at various gas pressures are given in this paper, and optimum experimental conditions are inferred from these results.

Synthesis of flower-like WS_(2) by chemical vapor deposition

Flower-like tungsten disulfide(WS_(2))with a diameter of 5-10μm is prepared by chemical vapor deposition(CVD).Scanning electron microscopy(SEM),energy dispersive spectrometer(EDS),Raman spectroscopy,and ultraviolet-visible(UV-vis)spectroscopy are used to characterize its morphological and optical properties,and its growth mechanism is discussed.The key factors for the formation of flower-like WS_(2)are determined.Firstly,the cooling process causes the generation of nucleation dislocations,and then the"leaf"growth of flower-like WS_(2)is achieved by increasing the temperature.

Controllable growth of wafer-scale PdS and PdS_(2) nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

Palladium(Pd)-based sulfides have triggered extensive interest due to their unique properties and potential applications in the fields of electronics and optoelectronics.However,the synthesis of large-scale uniform PdS and PdS_(2)nanofilms(NFs)remains an enormous challenge.In this work,2-inch wafer-scale PdS and PdS_(2) NFs with excellent stability can be controllably prepared via chemical vapor deposition combined with electron beam evaporation technique.The thickness of the pre-deposited Pd film and the sulfurization temperature are critical for the precise synthesis of PdS and PdS_(2) NFs.A corresponding growth mechanism has been proposed based on our experimental results and Gibbs free energy calculations.The electrical transport properties of PdS and PdS_(2) NFs were explored by conductive atomic force microscopy.Our findings have achieved the controllable growth of PdS and PdS_(2) NFs,which may provide a pathway to facilitate PdS and PdS_(2) based applications for next-generation high performance optoelectronic devices.

Growth of large-scale two-dimensional insulator Na2Ta4O11 through chemical vapor deposition

The insulator Na2Ta4O11 has been considered as a potential photocatalyst.However,little attention has been given to the synthesis of Na2Ta4O11 nanoparticles,let alone the growth of two-dimensional(2D)layered Na2Ta4O11 flake,which may bring innovative properties and promising applications.Here,the 2D thin-layer Na2Ta4O11 flake was first produced by chemical vapor deposition(CVD)method,with the smallest thickness reported currently.We have also synthesized 2D Na2Ta4O11 flake over 100μm,which was the largest value over the 2D level reported to date.Our work proposed novel strategies to synthesize other 2D metal oxide material and endow the Na2Ta4O11 more properties and applications.

GROWTH MECHANISM OF TiC WHISKERS PREMRED BY A MODIFIED CHEMICAL VAPOR DEPOSITION METHOD

High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciable effect on the whisker growth.The whisker orientations and morphology are determined by X-my diffraction (XRD),scanning electron micmpmph (SEM) and transmission electron microgmph (TEM).In addition to the spherical tips, spiral growth microsteps and obvious terraces are observed at the tips and side faces of whiskers in the present eoperiment. The whiskers grow mostly along (100) direction. The whisker growth mechanism is discussed in detail.

Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane

The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition(LPCVD)or low-pressure chemical vapor infiltration(LPCVI).In the field of ceramic matrix composites(CMCs),methyltrichlorosilane(CH3 SiCl3,MTS)is the most widely used source gas system for SiC,because stoichiometric SiC deposit can be facilitated at 900°C–1300°C.However,the reliability and accuracy of existing numerical models for these processing conditions are rarely reported.In this study,a comprehensive transport model was coupled with gas-phase and surface kinetics.The resulting gas-phase kinetics was confirmed via the measured concentration of gaseous species.The relationship between deposition rate and 24 gaseous species has been effectively evaluated by combining the special superiority of the novel extreme machine learning method and the conventional sticking coefficient method.Surface kinetics were then proposed and shown to reproduce the experimental results.The proposed simulation strategy can be used for different material systems.

Fabrication and characterization of iron and iron carbide thin films by plasma enhanced pulsed chemical vapor deposition

A new pulsed chemical vapor deposition（PCVD） process has been developed to fabricate iron（Fe） and iron carbide(Fe1-xCx) thin films at low temperature range from 150 ℃ to 230 ℃.The process employs bis（1,4-di-tert-butyl-1,3-diazabutadienyl）iron（Ⅱ） as iron source and hydrogen gas or hydrogen plasma as the coreactant.The films deposited with hydrogen gas are demonstrated polycrystalline with body-centered cubic Fe.However,for the films deposited with hydrogen plasma,the amorphous phase of iron carbide is obtained.The influence of the deposition temperature on iron and iron carbide characteristics have been investigated.

Study of filament performance in heat transfer and hydrogen dissociation in diamond chemical vapor deposition

Hot-filament chemical vapor deposition ( HFCVD) is a promising method for commercial production of diamond films. Filament performance in heat transfer and hydrogen decomposition in reactive environment was investigated. Power consumption by the filament in vacuum, helium and 2% CH4/H2 was experimentally determined in temperature range 1300℃-2200℃. Filament heat transfer mechanism in C-H reactive environment was calculated and analyzed. The result shows that due to surface carburization and slight carbon deposition, radiation in stead of hydrogen dissociation, becomes the largest contributor to power consumption. Filament-surface dissociation of H2 was observed at temperatures below 1873K, demonstrating the feasibility of diamond growth at low filament temperatures. The effective activation energies of hydrogen dissociation on several clean refractory flaments were derived from power consumption data in literatures. They are all lower than that of thermal dissociation of hydrogen revealing the nature of catalytic dissociation of hydrogen on filament surface. Observation of substrate temperature suggested a weaker role of atomic hydrogen recombination in heating substrates in C-H environment than in pure hydrogen.

纳米MoS_(2)固体薄膜制备及在钢领上的应用研究

为了减小纺织机械及器材专件的摩擦磨损,对比分析普通MoS_(2)油和脂与纳米MoS_(2)固体薄膜的润滑机理和特性,提出一种在钢领上采用真空化学气相沉积法合成纳米MoS_(2)固体薄膜的制备工艺;通过X射线衍射谱图和原子力显微镜,分析纳米MoS_(2)固体薄膜的组织结构及表面形貌,并对纳米MoS_(2)钢领进行镀铬镀氟渗杂复合膜处理。通过对比纳米MoS_(2)固体薄膜钢领与普通钢领纺纱质量,指出:纳米MoS_(2)固体薄膜具有优异的润滑性能,可以代替普通润滑油,达到纺织设备及器材专件少用油、不用油及无油自润滑的目的;纳米MoS_(2)的制备方法是制约其应用和发展的瓶颈;镀铬镀氟渗杂复合膜纳米MoS_(2)钢领在潮湿环境中不易生锈,较普通钢领的成纱质量好,值车工劳动强度小,钢领使用寿命延长。