Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the pro...Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the problem of how to control graphene to form desired Gr/Cu composite is not well solved. This paper aims at exploring the best parameters for preparing graphene with different layers on Cu foil by chemical vapor deposition(CVD)method and studying the effects of different layers graphene on Gr/Cu composite’s electrical conductivity. Graphene grown on single-sided and double-sided copper was prepared for Gr/Cu and Gr/Cu/Gr composites. The resultant electrical conductivity of Gr/Cu composites increased with decreasing graphene layers and increasing graphene volume fraction. The Gr/Cu/Gr composite with monolayer graphene owns volume fraction of less than 0.002%,producing the best electrical conductivity up to59.8 ×10^(6)S/m,equivalent to 104.5% IACS and 105.3% pure Cu foil.展开更多
High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciabl...High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciable effect on the whisker growth.The whisker orientations and morphology are determined by X-my diffraction (XRD),scanning electron micmpmph (SEM) and transmission electron microgmph (TEM).In addition to the spherical tips, spiral growth microsteps and obvious terraces are observed at the tips and side faces of whiskers in the present eoperiment. The whiskers grow mostly along (100) direction. The whisker growth mechanism is discussed in detail.展开更多
In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. B...In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. Boron atoms were successfully doped into the lattice of TiO2 through CVD, as evidenced from XPS analysis. B-doped TiO2 coating catalysts showed drastic and strong absorption in the visible light range with a red shift in the band gap transition. This novel B-TiO2 coating photocatalyst showed higher photocatalytic activity in methyl orange degradation under visible light irradiation than that of the pure TiO2 photocatalyst.展开更多
TiO2 fibers were prepared via alternatively introducing water vapor and Ti precursor carried by N2 to an APCVD （chemical vapor deposition under atmospheric pressure） reactor at ≤200 ℃. Activated carbon fibers （A...TiO2 fibers were prepared via alternatively introducing water vapor and Ti precursor carried by N2 to an APCVD （chemical vapor deposition under atmospheric pressure） reactor at ≤200 ℃. Activated carbon fibers （ACFs） were used as templates for deposition and later removed by calcinations. The obtained catalysts were characterized by scanning electron micros- copy （SEM）, transmission electron microscopy （TEM）, Brunauer, Emmett and Teller （BET） and X-ray diffraction （XRD） analysis The pores within TiO2 fibers included micro-range and meso-range, e.g., 7 nm, and the specific surface areas for TiO2 fibers were 141 m^2/g and 148 m^2/g for samples deposited at 100 ℃ and 200℃ （using ACFI700 as template）, respectively. The deposition temperature significantly influenced TiO2 morphology. The special advantages of this technique for preparing porous nano-material include no consumption of organic solvent in the process and easy control of deposition conditions and speeds.展开更多
Flower-like tungsten disulfide(WS_(2))with a diameter of 5-10μm is prepared by chemical vapor deposition(CVD).Scanning electron microscopy(SEM),energy dispersive spectrometer(EDS),Raman spectroscopy,and ultraviolet-v...Flower-like tungsten disulfide(WS_(2))with a diameter of 5-10μm is prepared by chemical vapor deposition(CVD).Scanning electron microscopy(SEM),energy dispersive spectrometer(EDS),Raman spectroscopy,and ultraviolet-visible(UV-vis)spectroscopy are used to characterize its morphological and optical properties,and its growth mechanism is discussed.The key factors for the formation of flower-like WS_(2)are determined.Firstly,the cooling process causes the generation of nucleation dislocations,and then the"leaf"growth of flower-like WS_(2)is achieved by increasing the temperature.展开更多
We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of...We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of the pre-synthesized Mo O_(3)flakes on the mica substrate compared to Mo O_(3)powder could dramatically reduce the consumption of the Mo source.The electronic information inferred from the four-probe scanning tunneling microscope(4P-STM)image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements.Furthermore,the direct van der Pauw transport also confirms its relatively high carrier mobility.Our study provides a reliable method to synthesize high-quality Mo S_(2)monolayer,which is confirmed by the direct 4P-STM measurement results.Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides(TMDs)on the Si O_(2)substrate and is essential to further development of the TMDs-related integrated devices.展开更多
Hot-filament chemical vapor deposition ( HFCVD) is a promising method for commercial production of diamond films. Filament performance in heat transfer and hydrogen decomposition in reactive environment was investigat...Hot-filament chemical vapor deposition ( HFCVD) is a promising method for commercial production of diamond films. Filament performance in heat transfer and hydrogen decomposition in reactive environment was investigated. Power consumption by the filament in vacuum, helium and 2% CH4/H2 was experimentally determined in temperature range 1300℃-2200℃. Filament heat transfer mechanism in C-H reactive environment was calculated and analyzed. The result shows that due to surface carburization and slight carbon deposition, radiation in stead of hydrogen dissociation, becomes the largest contributor to power consumption. Filament-surface dissociation of H2 was observed at temperatures below 1873K, demonstrating the feasibility of diamond growth at low filament temperatures. The effective activation energies of hydrogen dissociation on several clean refractory flaments were derived from power consumption data in literatures. They are all lower than that of thermal dissociation of hydrogen revealing the nature of catalytic dissociation of hydrogen on filament surface. Observation of substrate temperature suggested a weaker role of atomic hydrogen recombination in heating substrates in C-H environment than in pure hydrogen.展开更多
Boron doped diamond(BDD)performs well in electrochemical oxidation for organic pollutants thanks to its wide electrochemical window and superior chemical stability.We presented a method to obtain well-adherent large-s...Boron doped diamond(BDD)performs well in electrochemical oxidation for organic pollutants thanks to its wide electrochemical window and superior chemical stability.We presented a method to obtain well-adherent large-scale BDD/Nb electrode by the modified hot filament chemical vapor deposition system(HFCVD).SiC particles were sand blasted to enhance the adhesion of BDD coating.The BDD coating was then deposited on both sides of Nb which was placed vertically and closely with filament grids on both sides.The BDD/Nb electrodes had no deformation because the thermal deformations of the BDD films on both sides of the Nb substrate conteracted each other during cooling process after deposition.The surface morphology and purity of the BDD/Nb electrode were analyzed by Raman and scanning elestron microscope(SEM)techniques.Scratch test was used to investigate the adhesion of BDD films.The electrochemical performances were measured by cyclic voltammetry test.The BDD electrode at the B/C ratio of 2 000×10^(-6) held a higher oxygen evolution potential thanks to its high sp3 carbon content.Accelerated life test illustrated that the sandblasting pretreatment obviously enhanced the adhesion of BDD coating which resulted in a longer service duration than the un-sandblasted one.展开更多
基金supported substantially by the Southwest Jiaotong University for Material and Financial Support。
文摘Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the problem of how to control graphene to form desired Gr/Cu composite is not well solved. This paper aims at exploring the best parameters for preparing graphene with different layers on Cu foil by chemical vapor deposition(CVD)method and studying the effects of different layers graphene on Gr/Cu composite’s electrical conductivity. Graphene grown on single-sided and double-sided copper was prepared for Gr/Cu and Gr/Cu/Gr composites. The resultant electrical conductivity of Gr/Cu composites increased with decreasing graphene layers and increasing graphene volume fraction. The Gr/Cu/Gr composite with monolayer graphene owns volume fraction of less than 0.002%,producing the best electrical conductivity up to59.8 ×10^(6)S/m,equivalent to 104.5% IACS and 105.3% pure Cu foil.
文摘High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciable effect on the whisker growth.The whisker orientations and morphology are determined by X-my diffraction (XRD),scanning electron micmpmph (SEM) and transmission electron microgmph (TEM).In addition to the spherical tips, spiral growth microsteps and obvious terraces are observed at the tips and side faces of whiskers in the present eoperiment. The whiskers grow mostly along (100) direction. The whisker growth mechanism is discussed in detail.
基金Project (Nos. 90610005 and 20576120) supported by the National Natural Science Foundation of China
文摘In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. Boron atoms were successfully doped into the lattice of TiO2 through CVD, as evidenced from XPS analysis. B-doped TiO2 coating catalysts showed drastic and strong absorption in the visible light range with a red shift in the band gap transition. This novel B-TiO2 coating photocatalyst showed higher photocatalytic activity in methyl orange degradation under visible light irradiation than that of the pure TiO2 photocatalyst.
基金Project (No. 20477006) supported by the National Natural ScienceFoundation of China
文摘TiO2 fibers were prepared via alternatively introducing water vapor and Ti precursor carried by N2 to an APCVD （chemical vapor deposition under atmospheric pressure） reactor at ≤200 ℃. Activated carbon fibers （ACFs） were used as templates for deposition and later removed by calcinations. The obtained catalysts were characterized by scanning electron micros- copy （SEM）, transmission electron microscopy （TEM）, Brunauer, Emmett and Teller （BET） and X-ray diffraction （XRD） analysis The pores within TiO2 fibers included micro-range and meso-range, e.g., 7 nm, and the specific surface areas for TiO2 fibers were 141 m^2/g and 148 m^2/g for samples deposited at 100 ℃ and 200℃ （using ACFI700 as template）, respectively. The deposition temperature significantly influenced TiO2 morphology. The special advantages of this technique for preparing porous nano-material include no consumption of organic solvent in the process and easy control of deposition conditions and speeds.
基金Project supported by the Joint Research Funds of Department of Science&Technology of Shaanxi Province and Northwestern Polytechnical University(Grant No.2020GXLH-Z-029)。
文摘Flower-like tungsten disulfide(WS_(2))with a diameter of 5-10μm is prepared by chemical vapor deposition(CVD).Scanning electron microscopy(SEM),energy dispersive spectrometer(EDS),Raman spectroscopy,and ultraviolet-visible(UV-vis)spectroscopy are used to characterize its morphological and optical properties,and its growth mechanism is discussed.The key factors for the formation of flower-like WS_(2)are determined.Firstly,the cooling process causes the generation of nucleation dislocations,and then the"leaf"growth of flower-like WS_(2)is achieved by increasing the temperature.
基金Project supported by the National Natural Science Foundation of China(Grant No.61888102)the National Natural Science Foundation of China(Grant No.12004417)+5 种基金the National Key Research and Development Program of China(Grant Nos.2018YFA0305800 and 2019YFA0308500)the National Natural Science Foundation of China(Grant No.U2032206)Chinese Academy of Sciences(Grant Nos.XDB36000000,YSBR-003,and 112111KYSB20160061)Strategic Priority Research Program of Chinese Academy of Sciences(CAS)(Grant Nos.XDB30000000 and XDB28000000)Youth Innovation Promotion Association of CAS(Grant No.Y201902)CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)。
文摘We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of the pre-synthesized Mo O_(3)flakes on the mica substrate compared to Mo O_(3)powder could dramatically reduce the consumption of the Mo source.The electronic information inferred from the four-probe scanning tunneling microscope(4P-STM)image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements.Furthermore,the direct van der Pauw transport also confirms its relatively high carrier mobility.Our study provides a reliable method to synthesize high-quality Mo S_(2)monolayer,which is confirmed by the direct 4P-STM measurement results.Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides(TMDs)on the Si O_(2)substrate and is essential to further development of the TMDs-related integrated devices.
基金Supported by the National Natural Science Foundation of China under contract No.59976038.
文摘Hot-filament chemical vapor deposition ( HFCVD) is a promising method for commercial production of diamond films. Filament performance in heat transfer and hydrogen decomposition in reactive environment was investigated. Power consumption by the filament in vacuum, helium and 2% CH4/H2 was experimentally determined in temperature range 1300℃-2200℃. Filament heat transfer mechanism in C-H reactive environment was calculated and analyzed. The result shows that due to surface carburization and slight carbon deposition, radiation in stead of hydrogen dissociation, becomes the largest contributor to power consumption. Filament-surface dissociation of H2 was observed at temperatures below 1873K, demonstrating the feasibility of diamond growth at low filament temperatures. The effective activation energies of hydrogen dissociation on several clean refractory flaments were derived from power consumption data in literatures. They are all lower than that of thermal dissociation of hydrogen revealing the nature of catalytic dissociation of hydrogen on filament surface. Observation of substrate temperature suggested a weaker role of atomic hydrogen recombination in heating substrates in C-H environment than in pure hydrogen.
基金supported by the National Natural Science Foundation of China(Nos.51575269,51275232)the Six Talent Peaks Project in Jiangsu Province(No.ZBZZ005)the Zhejiang Provincial Key Laboratory for Cutting Tools(No.ZD201305)
文摘Boron doped diamond(BDD)performs well in electrochemical oxidation for organic pollutants thanks to its wide electrochemical window and superior chemical stability.We presented a method to obtain well-adherent large-scale BDD/Nb electrode by the modified hot filament chemical vapor deposition system(HFCVD).SiC particles were sand blasted to enhance the adhesion of BDD coating.The BDD coating was then deposited on both sides of Nb which was placed vertically and closely with filament grids on both sides.The BDD/Nb electrodes had no deformation because the thermal deformations of the BDD films on both sides of the Nb substrate conteracted each other during cooling process after deposition.The surface morphology and purity of the BDD/Nb electrode were analyzed by Raman and scanning elestron microscope(SEM)techniques.Scratch test was used to investigate the adhesion of BDD films.The electrochemical performances were measured by cyclic voltammetry test.The BDD electrode at the B/C ratio of 2 000×10^(-6) held a higher oxygen evolution potential thanks to its high sp3 carbon content.Accelerated life test illustrated that the sandblasting pretreatment obviously enhanced the adhesion of BDD coating which resulted in a longer service duration than the un-sandblasted one.
