MET receptor tyrosine kinase promotes the generation of functional synapses in adult cortical circuits

Loss of synapse and functional connectivity in brain circuits is associated with aging and neurodegeneration,however,few molecular mechanisms are known to intrinsically promote synaptogenesis or enhance synapse function.We have previously shown that MET receptor tyrosine kinase in the developing cortical circuits promotes dendritic growth and dendritic spine morphogenesis.To investigate whether enhancing MET in adult cortex has synapse regenerating potential,we created a knockin mouse line,in which the human MET gene expression and signaling can be turned on in adult(10–12 months)cortical neurons through doxycycline-containing chow.We found that similar to the developing brain,turning on MET signaling in the adult cortex activates small GTPases and increases spine density in prefrontal projection neurons.These findings are further corroborated by increased synaptic activity and transient generation of immature silent synapses.Prolonged MET signaling resulted in an increasedα-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid/N-methyl-Daspartate(AMPA/NMDA)receptor current ratio,indicative of enhanced synaptic function and connectivity.Our data reveal that enhancing MET signaling could be an interventional approach to promote synaptogenesis and preserve functional connectivity in the adult brain.These findings may have implications for regenerative therapy in aging and neurodegeneration conditions.

Nullors, and Nullor Circuits;There Applications in Symbolic Circuit Analysis and Design

The objective in this presentation is to introduce some of the unique properties and applications of nullors in active circuit analysis and designs. The emphasis is to discuss the role nullors can play in symbolic representation of transfer functions. To show this we adopt the topological platform for the circuit analysis and use a recently developed Admittance Method (AM) to achieve the Sum of Tree Products (STP), replacing the determinant and cofactors of the Nodal Admittance Matrix (NAM) of the circuit. To construct a transfer function, we start with a given active circuit and convert all its controlled sources and I/O-ports to nullors. Now, with a solid nullor circuit (passive elements and nullors) we first eliminate the passive elements through AM operations. This produces the STPs. Second, the all-nullor circuit is then used to find the signs or the STPs. Finally, the transfer function (in symbolic, if chosen) is obtained from the ratio between the STPs.

Neuromorphic circuits based on memristors: endowing robots with a human-like brain

Robots are widely used,providing significant convenience in daily life and production.With the rapid development of artificial intelligence and neuromorphic computing in recent years,the realization of more intelligent robots through a pro-found intersection of neuroscience and robotics has received much attention.Neuromorphic circuits based on memristors used to construct hardware neural networks have proved to be a promising solution of shattering traditional control limita-tions in the field of robot control,showcasing characteristics that enhance robot intelligence,speed,and energy efficiency.Start-ing with introducing the working mechanism of memristors and peripheral circuit design,this review gives a comprehensive analysis on the biomimetic information processing and biomimetic driving operations achieved through the utilization of neuro-morphic circuits in brain-like control.Four hardware neural network approaches,including digital-analog hybrid circuit design,novel device structure design,multi-regulation mechanism,and crossbar array,are summarized,which can well simulate the motor decision-making mechanism,multi-information integration and parallel control of brain at the hardware level.It will be definitely conductive to promote the application of memristor-based neuromorphic circuits in areas such as intelligent robotics,artificial intelligence,and neural computing.Finally,a conclusion and future prospects are discussed.

Pixelated non-volatile programmable photonic integrated circuits with 20-level intermediate states

Multi-level programmable photonic integrated circuits(PICs)and optical metasurfaces have gained widespread attention in many fields,such as neuromorphic photonics,opticalcommunications,and quantum information.In this paper,we propose pixelated programmable Si_(3)N_(4)PICs with record-high 20-level intermediate states at 785 nm wavelength.Such flexibility in phase or amplitude modulation is achieved by a programmable Sb_(2)S_(3)matrix,the footprint of whose elements can be as small as 1.2μm,limited only by the optical diffraction limit of anin-house developed pulsed laser writing system.We believe our work lays the foundation for laser-writing ultra-high-level(20 levels and even more)programmable photonic systems and metasurfaces based on phase change materials,which could catalyze diverse applications such as programmable neuromorphic photonics,biosensing,optical computing,photonic quantum computing,and reconfigurable metasurfaces.

In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits

The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface,where Nb2O5 is considered the main loss source.Here,we suppress the formation of native oxides by in-situ deposition of a TiN capping layer on the Nb film.With TiN capping layers,no Nb2O5 forms on the surface of the Nb film.The quality factor Qi of the Nb resonator increases from 5.6×10^(5) to 7.9×10^(5) at low input power and from 6.8×10^(6) to 1.1×10^(7)at high input power.Furthermore,the TiN capping layer also shows good aging resistance in Nb resonator devices,with no significant performance fluctuations after one month of aging.These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.

Interplay between topology and localization on superconducting circuits

Topological insulators occupy a prominent position in the realm of condensed matter physics. Nevertheless, the presence of strong disorder has the potential to disrupt the integrity of topological states, leading to the localization of all states.This study delves into the intricate interplay between topology and localization within the one-dimensional Su–Schrieffer–Heeger(SSH) model, which incorporates controllable off-diagonal quasi-periodic modulations on superconducting circuits.Through the application of external alternating current(ac) magnetic fluxes, each transmon undergoes controlled driving,enabling independent tuning of all coupling strengths. Within a framework of this model, we construct comprehensive phase diagrams delineating regions characterized by extended topologically nontrivial states, critical localization, and coexisting topological and critical localization phases. The paper also addresses the dynamics of qubit excitations, elucidating distinct quantum state transfers resulting from the intricate interplay between topology and localization. Additionally, we propose a method for detecting diverse quantum phases utilizing existing experimental setups.

2024 IEEE International Conference on Integrated Circuits,Technologies and Applications

October 25-27(Fri-Sun),2024 Hangzhou杭州,Hangzhou,China Call for Papers The 7th IEEE International Conference on Integrated Circuits,Technologies and Applications(ICTA 2024),will be held on October 25-27,2024 in Hangzhou,China.This conference will be held in China to provide an international forum according to IEEE standard for the presentation and exchange of the latest technical achievements and cross-discipline fertilization of IC designs,technologies,and applications in our fast-changing society.This year's theme is“Chiplet and Future IDM”.

A Novel Framework to Construct S-Box Quantum Circuits Using System Modeling: Application to 4-Bit S-Boxes

Quantum computers accelerate many algorithms based on the superposition principle of quantum mechanics.The Grover algorithm provides significant performance to malicious users attacking symmetric key systems.Since the performance of attacks using quantum computers depends on the efficiency of the quantum circuit of the encryption algorithms,research research on the implementation of quantum circuits is essential.This paper presents a new framework to construct quantum circuits of substitution boxes(S-boxes)using system modeling.We model the quantum circuits of S-boxes using two layers:Toffoli and linear layers.We generate vector spaces based on the values of qubits used in the linear layers and apply them to find quantum circuits.The framework finds the circuit bymatching elements of vector spaces generated fromthe input and output of a given S-box,using the forward search or themeet-in-the-middle strategy.We developed a tool to apply this framework to 4-bit S-boxes.While the 4-bit S-box quantum circuit construction tool LIGHTER-R only finds circuits that can be implemented with four qubits,the proposed tool achieves the circuits with five qubits.The proposed tool can find quantum circuits of 4-bit odd permutations based on the controlled NOT,NOT,and Toffoli gates,whereas LIGHTER-R is unable to perform this task in the same environment.We expect this technique to become a critical step toward optimizing S-box quantum circuits.

Correction of microwave pulse reflection by digital filters in superconducting quantum circuits

Reducing the control error is vital for high-fidelity digital and analog quantum operations.In superconducting circuits,one disagreeable error arises from the reflection of microwave signals due to impedance mismatch in the control chain.Here,we demonstrate a reflection cancelation method when considering that there are two reflection nodes on the control line.We propose to generate the pre-distortion pulse by passing the envelopes of the microwave signal through digital filters,which enables real-time reflection correction when integrated into the field-programmable gate array(FPGA).We achieve a reduction of single-qubit gate infidelity from 0.67%to 0.11%after eliminating microwave reflection.Real-time correction of microwave reflection paves the way for precise control and manipulation of the qubit state and would ultimately enhance the performance of algorithms and simulations executed on quantum processors.

Study on Si-SiGe Three-Dimensional CMOS Integrated Circuits

Based on the physical characteristics of SiGe material,a new three-dimensional （3D） CMOS IC structure is proposed,in which the first device layer is made of Si material for nMOS devices and the second device layer is made of Six Ge1- x material for pMOS. The intrinsic performance of ICs with the new structure is then limited by Si nMOS.The electrical characteristics of a Si-SiGe 3D CMOS device and inverter are all simulated and analyzed by MEDICI. The simulation results indicate that the Si-SiGe 3D CMOS ICs are faster than the Si-Si 3D CMOS ICs. The delay time of the 3D Si-SiGe CMOS inverter is 2-3ps,which is shorter than that of the 3D Si-Si CMOS inverter.

Design of Cold-Junction Compensation and Disconnection Detection Circuits of Various Thermocouples and Implementation of Multi-Channel Interfaces Using Them-A Secondary Publication

Cold-junction compensation(CJC)and disconnection detection circuit design of various thermocouples(TC)and multi-channel TC interface circuits were designed.The CJC and disconnection detection circuit consists of a CJC semiconductor device,an instrumentation amplifier(IA),two resistors,and a diode for disconnection detection.Based on the basic circuit,a multi-channel interface circuit was also implemented.The CJC was implemented using compensation semiconductor and IA,and disconnection detection was detected by using two resistors and a diode so that IA input voltage became-0.42 V.As a result of the experiment using R-type TC,the error of the designed circuit was reduced from 0.14 mV to 3μV after CJC in the temperature range of 0°C to 1400°C.In addition,it was confirmed that the output voltage of IA was saturated from 88 mV to-14.2 V when TC was disconnected from normal.The output voltage of the designed circuit was 0 V to 10 V in the temperature range of 0°C to 1400°C.The results of the 4-channel interface experiment using R-type TC were almost identical to the CJC and disconnection detection results for each channel.The implemented multi-channel interface has a feature that can be applied equally to E,J,K,T,R,and S-type TCs by changing the terminals of CJC semiconductor devices and adjusting the IA gain.

Nonlinear Auto-Companding Method for Behavioral Modeling of Switched-Current Circuits

A wavelet collocation method with nonlinear auto companding is proposed for behavioral modeling of switched current circuits.The companding function is automatically constructed according to the initial error distribution obtained through approximating the input output function of the SI circuit by conventional wavelet collocation method.In practical applications,the proposed method is a general purpose approach,by which both the small signal effect and the large signal effect are modeled in a unified formulation to ease the process of modeling and simulation.Compared with the published modeling approaches,the proposed nonlinear auto companding method works more efficiently not only in controlling the error distribution but also in reducing the modeling errors.To demonstrate the promising features of the proposed method,several SI circuits are employed as examples to be modeled and simulated.

New Design Methodologies for High Speed Low-Voltage 1-Bit CMOS Full Adder Circuits

New methodologies for l-Bit XOR-XNOR full- adder circuits are proposed to improve the speed and power as these circuits are basic building blocks for ALU circuit implementation. This paper presents comparative study of high-speed, low-power and low voltage full adder circuits. Simulation results illustrate the superiority of the proposed adder circuit against the conventional complementary metal-oxide-semiconductor （CMOS）, complementary pass-transistor logic （CPL）, TG, and Hybrid adder circuits in terms of delay, power and power delay product （PDP）. Simulation results reveal that the proposed circuit exhibits lower PDP and is more power efficient and faster when compared with the best available 1-bit full adder circuits. The design is implemented on UMC 0.18 μm process models in Cadence Virtuoso Schematic Composer at 1.8 V single ended supply voltage and simulations are carried out on Spectre S.

Electronically Tunable Minimum Component Biquadratic Filters for Interface Circuits

In this paper, two new electronically tunable filter configurations are proposed. The proposed filters operate current-mode (CM), voltage-mode (VM), transimpedance-mode (TIM) and transadmittance-mode (TAM). The first configuration realizes second-order VM band-pass and TAM high-pass filter characteristics from the same configuration. The second one realizes second-order TIM band-pass and CM low-pass filter characteristics from the same configuration. They also use minimum number of electronic components (two capacitors and one active component namely;current controlled current difference transconductance amplifier). The workability of the proposed structures has been demonstrated by simulation results.

Analyzing Electric Circuits with Computer Algebra

This report shows how starting from classic electric circuits embodying commonly electric components we have reached semi-complicated circuits embodying the same components that analyzing the signal characteristics requires a Computer Algebra System. Our approach distinguishes itself from the electrical engineers’ (EE) approach that relies on utilizing commercially available software. Our approach step-by-step shows how Kirchhoff’s rules are applied conducive to the needed circuit information. It is shown for the case at hand the characteristic information is a set of coupled differential equations and that with the help of Mathematica numeric solutions are sought. Our report paves the research road for unlimited creative similar circuits with any degree of complications. Occasionally, by tweaking the circuits we have addressed the “what if” scenarios widening the scope of the investigation. Justification of the accuracy of our analysis for the generalized circuits is cross-checked by arranging the components symmetrizing the circuit leading to an intuitively predictable reasonable result. Mathematica codes are embedded assisting the interested reader in producing and extending our results.

Wavelet neural network based fault diagnosis in nonlinear analog circuits

The theories of diagnosing nonlinear analog circuits by means of the transient response testing are studled. Wavelet analysis is made to extract the transient response signature of nonlinear circuits and compress the signature dada. The best wavelet function is selected based on the between-category total scatter of signature. The fault dictionary of nonlinear circuits is constructed based on improved back-propagation（BP） neural network. Experimental results demonstrate that the method proposed has high diagnostic sensitivity and fast fault identification and deducibility.

Microbleeds in fronto-subcortical circuits are predictive of dementia conversion in patients with vascular cognitive impairment but no dementia

Cerebral small vessel disease（CSVD） is a common etiology of vascular cognitive impairment with no dementia（V-CIND）. Studies have revealed that cerebral microbleeds（CMBs）, a feature of CSVD, contribute to cognitive impairment. However, the association between CMBs and dementia conversion in individuals with V-CIND is still unclear. Here, we analyzed the predictive role of CMBs in the conversion from V-CIND to dementia in CSVD patients. We recruited and prospectively assessed 85 patients with CSVD and V-CIND. V-CIND was evaluated using a series of comprehensive neuropsychological scales, including the Chinese version of the Montreal Cognitive Assessment and the Clinical Dementia Rating. MRI assessments were used to quantify lacunar infarcts, white matter hyperintensities, CMBs, and medial temporal lobe atrophy. Eighty-two of the 85 patients completed the assessment for dementia conversion at a 1-year follow-up assessment. Multivariate logistic regression analyses were conducted to examine independent clinical and MRI variables associated with dementia conversion. Twenty-four patients（29.3%） had converted to dementia at the 1-year follow-up, and these individuals had significantly more CMBs in the fronto-subcortical circuits. Multivariate logistic regression analyses revealed that the patients with CMBs in the fronto-subcortical circuits（odds ratio = 4.4; 95% confidence interval： 1.602-12.081, P = 0.004） and 5 or more CMBs overall（odds ratio = 17.6, 95% confidence interval： 3.23-95.84, P = 0.001） had a significantly increased risk of dementia at the 1-year follow-up. These findings indicate that CMBs in the fronto-subcortical circuits may be predictive of dementia conversion in CSVD patients with V-CIND, and thus extend the clinical significance of CMBs.

Bias Current Compensation Method with 41.4% Standard Deviation Reduction to MOSFET Transconductance in CMOS Circuits

A simple and successful method for the stability enhancement of integrated circuits is presented. When the process parameters, temperature, and supply voltage are changed, according to the simulation results, this method yields a standard deviation of the transconductance of MOSFETs that is 41.4% less than in the uncompensated case. This method can be used in CMOS LC oscillator design.

Flexural wave band-gaps in phononic metamaterial beam with hybrid shunting circuits

Periodic arrays of hybrid-shunted piezoelectric patches are used to control the band-gaps of phononic metamaterial beams. Passive resistive-inductive （RL） shunting circuits can produce a narrow resonant band-gap （RG）, and active negative capacitive （NC） shunting circuits can broaden the Bragg band-gaps （BGs）. In this article, active NC shunting circuits and passive resonant RL shunting circuits are connected to the same piezoelectric patches in parallel, which are usually called hybrid shunting circuits, to control the location and the extent of the band-gaps. A super-wide coupled band-gap is generated when the coupling between RG and the BG occurs. The attenuation constant of the infinite periodic structure is predicted by the transfer matrix method, which is compared with the vibration transmittance of a finite periodic structure calculated by the finite element method. Numerical results show that the hybrid-shunting circuits can make the band-gaps wider by appropriately selecting the inductances, negative capacitances, and resistances.

Emerging MoS_(2)Wafer-Scale Technique for Integrated Circuits

As an outstanding representative of layered materials,molybdenum disulfide(MoS_(2))has excellent physical properties,such as high carrier mobility,stability,and abundance on earth.Moreover,its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics,flexible electronics,and focal-plane photodetector.However,to realize the all-aspects application of MoS_(2),the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization.Although the MoS_(2)grain size has already improved from several micrometers to sub-millimeters,the high-quality growth of wafer-scale MoS_(2)is still of great challenge.Herein,this review mainly focuses on the evolution of MoS_(2)by including chemical vapor deposition,metal–organic chemical vapor deposition,physical vapor deposition,and thermal conversion technology methods.The state-of-the-art research on the growth and optimization mechanism,including nucleation,orientation,grain,and defect engineering,is systematically summarized.Then,this review summarizes the wafer-scale application of MoS_(2)in a transistor,inverter,electronics,and photodetectors.Finally,the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS_(2).