5G Wideband Bandpass Filtering Power Amplifiers Based on a Bandwidth-Extended Bandpass Matching Network

In this paper,a 5G wideband power amplifier(PA)with bandpass filtering response is synthesized using a bandwidth-extended bandpass filter as the matching network(MN).In this structure,the bandwidth(θ_(C))is defined as a variable in the closedform equations provided by the microstrip bandpass filter.It can be extended over a wide range only by changing the characteristic impedances of the structure.Different from the other wideband MNs,the extension of bandwidth does not increase the complexity of the structure(order n is fixed).In addition,based on the bandwidth-extended structure,the wideband design of bandpass filtering PA is not limited to the fixed bandwidth of the specific filter structure.The theoretical analysis of the MN and the design flow of the PA are provided in this design.The fabricated bandpass filtering PA can support almost one-octave bandwidth(2-3.8 GHz),covering the two 5G bands(n41 and n78).The drain efficiency of 47%-60%and output power higher than 40 dBm are measured.Good frequency selectivity in S-parameter measurements can be observed.

Impact of amplified spontaneous emission noise on the SRS threshold of high-power fiber amplifiers

Impact of amplified spontaneous emission(ASE)noise on the stimulated Raman scattering(SRS)threshold of highpower fiber amplifiers is demonstrated numerically through a spectral evolution approach.The simulation results confirm that ASE noise in the Raman wavelength band could reduce the SRS threshold of high-power fiber amplifiers significantly.As for ASE noise originated the main amplifier,it becomes stronger and reduces the SRS threshold at shorter operation wavelength below 1052 nm.As for ASE noise originated from the seed laser,it reduces the SRS threshold at different operation wavelength under the condition that the Raman ratio is over-90 dB in the seed laser.The theoretical method and results in this work could provide a well reference to extend the operation wavelength of high-power fiber lasers.

Multimode high-resolution DPWM for RF class-D amplifiers

This paper describes a multimode high-resolution digital pulse width modulator.This modulator,based on a novel hybrid structure,not only has a programmable duty cycle but also realizes phase modulation.A 576 ps pulse resolution is achieved based on a 13.56 MHz switching frequency for near field communication.Fabricated in a SMIC 0.18-μm EEPROM CMOS process,the total area of modulator is only 130×180μm2.Measurement results validate the multi-mode modulation function and high pulse resolution.

Research Towards Terahertz Power Amplifiers in Silicon-Based Process

In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this paper.Particularly,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 dBm.Based on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 dBm.To further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak gain.All the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process.

High-Power Raman Soliton Generation at 1.7 μm in All-Fiber Polarization-Maintaining Erbium-Doped Amplifier

An all-fiber polarization maintaining high-power laser system operating at 1.7 μm based on the Ramaninduced soliton self-frequency shifting effect is demonstrated. The entirely fiberized system is built by erbiumdoped oscillator and two-stage amplifiers with polarization maintaining commercial silica fibers and devices, which can provide robust and stable soliton generation. High-power soliton laser with the average power of 0.28 W,the repetition rate of 42.7 MHz, and pulse duration of 515 fs is generated directly from the main amplifier.Our experiment provides a feasible method for high-power all-fiber polarization maintaining femtosecond laser generation working at 1.7 μm.

Broadband Dual-Input Doherty Power Amplifier Design Based on a Simple Adaptive Power Dividing Ratio Function

In this paper,a simple adaptive power dividing function for the design of a dual-input Doherty power amplifier(DPA)is presented.In the presented approaches,the signal separation function(SSF)at different frequency points can be characterized by a polynomial.And in the practical test,the coefficients of SSF can be determined by measuring a small number of data points of input power.Same as other dualinput DPAs,the proposed approach can also achieve high output power and back-off efficiency in a broadband operation band by adjusting the power distribution ratio flexibly.Finally,a 1.5-2.5 GHz highefficiency dual-input Doherty power amplifier is implemented according to this approach.The test results show that the peak power is 48.6-49.7d Bm,and the 6-d B back-off efficiency is 51.0-67.0%,and the saturation efficiency is 52.4-74.6%.The digital predistortion correction is carried out at the frequency points of 1.8/2.1GHz,and the adjacent channel power ratio is lower than-54.5d Bc.Simulation and experiment results can verify the effectiveness and correctness of the proposed method.

Nonlinear Absorption and Low-threshold Two-photon Pumped Amplified Stimulated Emission from FAPbBr_(3) Nanocrystals

Formamidinium lead bromide(FAPbBr_(3))nanocrystals(NCs)have been considered to be a good optoelectronic material due to their pure green emission,excellent stability and superior carrier transport characteristics.However,two-photon pumped amplified spontaneous emission(ASE)and the corresponding nonlinear optical properties of FAPbBr_(3) NCs are scarcely revealed.Herein,we synthesized colloidal FAPbBr_(3) NCs with different sizes by changing the molar ratio of FABr/PbBr_(2) in the precursor solution,using ligand assisted precipitation(LARP)technology at room temperature.Photoluminescence(PL)and time resolved photoluminescence(TRPL)spectroscopy were measured to characterize their ASE properties.And their nonlinear optical properties were studied through the Zscan technique and the two-photon excited fluorescence method.The stimulated emission properties including oneand two-photon pumped ASE have been realized from FAPbBr_(3) NCs.With large two-photon absorption coefficient(0.27 cm/GW)and high non-linear absorption cross-section(7.52×10^(5) GM),ASE with threshold as low as 9.8μJ/cm^(2) and 487μJ/cm^(2) have been obtained from colloidal FAPbBr_(3) NCs using one-and two-photon excitations.These results indicate that as a new possible green-emitting frequency-upconversion material with low thresholds,FAPbBr_(3) NCs hold great potential in the development of high-performance two-photon pump lasers.

A Hybrid Integrated and Low-Cost Multi-Chip Broadband Doherty Power Amplifier Module for 5G Massive MIMO Application

In this paper,a hybrid integrated broadband Doherty power amplifier(DPA)based on a multi-chip module(MCM),whose active devices are fabricated using the gallium nitride(GaN)process and whose passive circuits are fabricated using the gallium arsenide(GaAs)integrated passive device(IPD)process,is proposed for 5G massive multiple-input multiple-output(MIMO)application.An inverted DPA structure with a low-Q output network is proposed to achieve better bandwidth performance,and a single-driver architecture is adopted for a chip with high gain and small area.The proposed DPA has a bandwidth of 4.4-5.0 GHz that can achieve a saturation of more than 45.0 dBm.The gain compression from 37 dBm to saturation power is less than 4 dB,and the average power-added efficiency(PAE)is 36.3%with an 8.5 dB peak-to-average power ratio(PAPR)in 4.5-5.0 GHz.The measured adjacent channel power ratio(ACPR)is better than50 dBc after digital predistortion(DPD),exhibiting satisfactory linearity.

Harmonic balance simulation of the influence of component uniformity and reliability on the performance of a Josephson traveling wave parametric amplifier

A Josephson traveling wave parametric amplifier(JTWPA),which is a quantum-limited amplifier with high gain and large bandwidth,is the core device of large-scale measurement and control systems for quantum computing.A typical JTWPA consists of thousands of Josephson junctions connected in series to form a transmission line and hundreds of shunt LC resonators periodically loaded along the line for phase matching.Because the variation of these capacitors and inductors can be detrimental to their high-frequency characteristics,the fabrication of a JTWPA typically necessitates precise processing equipment.To guide the fabrication process and further improve the design for manufacturability,it is necessary to understand how each electronic component affects the amplifier.In this paper,we use the harmonic balance method to conduct a comprehensive study on the impact of nonuniformity and fabrication yield of the electronic components on the performance of a JTWPA.The results provide insightful and scientific guidance for device design and fabrication processes.

Three-channel CMOS transimpedance amplifier for LiDAR sensor receiver

For time-of-flight(TOF)light detection and ranging(LiDAR),a three-channel high-performance transimpedance amplifier(TIA)with high immunity to input load capacitance is presented.A regulated cascade(RGC)as the input stage is at the core of the complementary metal oxide semiconductor(CMOS)circuit chip,giving it more immunity to input photodiode detectors.A simple smart output interface acting as a feedback structure,which is rarely found in other designs,reduces the chip size and power consumption simultaneously.The circuit is designed using a 0.5μm CMOS process technology to achieve low cost.The device delivers a 33.87 dB?transimpedance gain at 350 MHz.With a higher input load capacitance,it shows a-3 dB bandwidth of 461 MHz,indicating a better detector tolerance at the front end of the system.Under a 3.3 V supply voltage,the device consumes 5.2 mW,and the total chip area with three channels is 402.8×597.0μm2(including the test pads).

Step memory polynomial predistorter for power amplifiers with memory

To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial （MP）predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%.

RESEARCH ON NONLINEAR DISTORTION IN AMPLIFIERS

Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.

Behavioral modeling of RF power amplifiers with time-delay feed-forward neural networks

A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the parameters, the back- propagation algorithm is applied to train the proposed neural networks. The proposed model is verified by the typical odd- order-only memory polynomial model in simulation, and the performance is compared with different numbers of taped delay lines（TDLs） and perceptrons of the hidden layer. For validating the TDFFNN model by experiments, a digital test bench is set up to collect input and output data of power amplifiers at a 60 × 10^6 sample/s sampling rate. The 3.75 MHz 16-QAM signal generated in the vector signal generator（VSG） is chosen as the input signal, when measuring the dynamic AM/AM and AM/PM characteristics of power amplifiers. By comparisons and analyses, the presented model provides a good performance in convergence, accuracy and efficiency, which is approved by simulation results and experimental results in the time domain and frequency domain.

Design of Low-Voltage Low Noise Amplifiers with High Linearity

A CMOS radio frequency low noise amplifier with high linearity and low operation voltage of less than 1.0V is presented.In this circuit,an auxiliary MOSFET in the triode region is used to boost the linearity.Simulation shows that this method can boost the input-referred 3rd-order intercept point with much less power dissipation than that of traditional power/linearity tradeoff solution which pays at least 1dB power for 1dB linearity improvement.It is also shown that the size of the common-gate PMOS transistor needs to be optimized to reduce its loaded input impedance so as not to degrade the linearity due to high voltage gain at its source terminal.The simulation is carried out with TSMC 0.18μm RF CMOS technology and SpectreRF.

Nested Miller Active-Capacitor Frequency Compensation for Low-Power Three-Stage Amplifiers

A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performances than previous works. Implemented in standard 0.35μm CMOS technology, our three-stage amplifier achieves 105dB DC gain, 3.3M GBW,68 phase margin, and 2.56V/μs average slew rate under a 150pF capacitive load. All of these are realized with only 40μW power consumption under a 2V power supply,with very small compensation capacitors.

Design of a memory polynomial predistorter for wideband envelope tracking amplifiers

Efficiency and linearity of the microwave power amplifier are critical elements for mobile communication systems. A memory polynomial baseband predistorter based on an indirect learning architecture is presented for improving the linearity of an envelope tracing （ET） amplifier with application to a wireless transmitter. To deal with large peak-to-average ratio （PAR） problem, a clipping procedure for the input signal is employed. Then the system performance is verified by simulation results. For a single carrier wideband code division multiple access （WCDMA） signal of 16-quadrature amplitude modulation （16-QAM）, about 2% improvement of the error vector magnitude （EVM） is achieved at an average output power of 45.5 dBm and gain of 10.6 dB, with adjacent channel leakage ratio （ACLR） of -64.55 dBc at offset frequency of 5 MHz. Moreover, a three-carrier WCDMA signal and a third-generation （3G） long term evolution （LTE） signal are used as test signals to demonstrate the performance of the proposed linearization scheme under different bandwidth signals.

High Power Passive Phase Locking of Four Yb-Doped Fiber Amplifiers by an All-Optical Feedback Loop

We report the passive phase locking of four high power Yb-doped fiber amplifiers with ring cavity.The interference patterns at different output power are observed and the Strehl ratios are measured.The maximum coherent output power of the fiber array is up to 1062 W by multi-stage amplification.The stable beam profiles of various phase relationships are observed by controlling the position of the feedback fiber,in good agreement with the calculated results.By using master oscillator power-amplifier(MOPA)architecture and broadband operation of passively phased systems,higher power scaling with high beam quality appears to be feasible.

Design Technologies for Silicon-Based High-Efficiency RF Power Amplifiers:A Brief Overview

This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.

Adaptive Digital Predistortion Schemes to Linearize RF Power Amplifiers with Memory Effects

To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, are proposed for predistorter design. Two adaptive digital predistortion （ADPD） schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square （RLS） algorithm, and the other utilizes the memory LUT model and the least mean square （LMS） algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.

Quantum-dot Semiconductor Optical Amplifiers in State Space Model

A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along QD-SOA cavity are considered as state variables of the system.Simulations show that SSM calculates QD-SOA′s static and dynamic characteristics with high accuracy.