The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improve...The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improved. The Class-F PA reduces the overlap of drain voltage and current by tuning harmonic impedance so that high efficiency is achieved. This paper begins with the principle of class-F PA, regards the third harmonic voltage as an independent variable, analyzes the influence of the third harmonic on fundamental, and points out how drain efficiency and output power vary with the third harmonic voltage with an I-V knee effect. Finally, the best third harmonic impedance is found mathematically. We compare our results with the Loadpull technique in advanced design system environment and conclude that an optimized third harmonic impedance is open in an ideal case, while it is not at an open point with the I-V knee effect, and the drain efficiency with optimized third harmonic impedance is 4% higher than that with the third harmonic open.展开更多
An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influ...An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.展开更多
This paper proposed the high-frequency, multi-harmonic-controlled, Class-F power amplifier (PA) implemented with 0.5 μm GaN Hetrojunction Electron Mobility Transistor (HEMT). For PA design at high frequencies, parasi...This paper proposed the high-frequency, multi-harmonic-controlled, Class-F power amplifier (PA) implemented with 0.5 μm GaN Hetrojunction Electron Mobility Transistor (HEMT). For PA design at high frequencies, parasitics of a transistor significantly increase the difficulty of harmonic manipulation, compared to low-frequency cases. To overcome this issue, we propose a novel design methodology based on a band-reject, low-pass, output matching network, which is realized with passive components. This network provides optimal fundamental impedance and allows harmonic control up to the third order to enable an efficient Class-F behavior. The implemented PA exhibits performance at 2.5 GHz with a 50% PAE, 14 dB gain, and 10 W output power.展开更多
The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specification...The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.展开更多
A broadband class-F power amplifier for an S-band handset device is integrated on a 330.82 mm^3 die using an In Ga /GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, ...A broadband class-F power amplifier for an S-band handset device is integrated on a 330.82 mm^3 die using an In Ga /GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8–2.5 GHz. Tested with a continuous wave（CW） signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than –53 dBc across the second to fifth harmonic are obtained.展开更多
为了满足移动通信系统中功率放大器宽频带和高效率的需求,采用阶梯阻抗网络实现宽带匹配电路,设计了一款高效率连续逆F类功率放大器。选用CGH40010F GaN HEMT晶体管,通过对连续逆F类功率放大器的理论分析,并且结合ADS负载牵引与源牵引仿...为了满足移动通信系统中功率放大器宽频带和高效率的需求,采用阶梯阻抗网络实现宽带匹配电路,设计了一款高效率连续逆F类功率放大器。选用CGH40010F GaN HEMT晶体管,通过对连续逆F类功率放大器的理论分析,并且结合ADS负载牵引与源牵引仿真,提取各频点的最佳负载阻抗和源阻抗,设计阶梯阻抗匹配电路,最终实现了一款宽带高效率功率放大器。测试结果表明,该功率放大器在3.2~3.8 GHz频段内,增益大于14 dB,增益平坦度小于±0.4 dB,饱和输出功率为40.6~40.9 dBm,最大漏极效率为64%~68%。该功率放大器的测试性能良好,可以为宽频带高效率功率放大器的设计提供参考。展开更多
文摘The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improved. The Class-F PA reduces the overlap of drain voltage and current by tuning harmonic impedance so that high efficiency is achieved. This paper begins with the principle of class-F PA, regards the third harmonic voltage as an independent variable, analyzes the influence of the third harmonic on fundamental, and points out how drain efficiency and output power vary with the third harmonic voltage with an I-V knee effect. Finally, the best third harmonic impedance is found mathematically. We compare our results with the Loadpull technique in advanced design system environment and conclude that an optimized third harmonic impedance is open in an ideal case, while it is not at an open point with the I-V knee effect, and the drain efficiency with optimized third harmonic impedance is 4% higher than that with the third harmonic open.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA016801)
文摘An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.
文摘This paper proposed the high-frequency, multi-harmonic-controlled, Class-F power amplifier (PA) implemented with 0.5 μm GaN Hetrojunction Electron Mobility Transistor (HEMT). For PA design at high frequencies, parasitics of a transistor significantly increase the difficulty of harmonic manipulation, compared to low-frequency cases. To overcome this issue, we propose a novel design methodology based on a band-reject, low-pass, output matching network, which is realized with passive components. This network provides optimal fundamental impedance and allows harmonic control up to the third order to enable an efficient Class-F behavior. The implemented PA exhibits performance at 2.5 GHz with a 50% PAE, 14 dB gain, and 10 W output power.
文摘The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.
文摘A broadband class-F power amplifier for an S-band handset device is integrated on a 330.82 mm^3 die using an In Ga /GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8–2.5 GHz. Tested with a continuous wave（CW） signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than –53 dBc across the second to fifth harmonic are obtained.
