Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency (RF) msgnetron sputtering at room temperature, The...Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency (RF) msgnetron sputtering at room temperature, The RF power is varied from 75 to 150 W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power, The lowest resistivity achieved is 2.07 × 10^-3Ωcm at an RF power of 100W with a Hall mobility of 16cm^2V^-1s^-1 and a carrier concentration of 1.95 × 10^20 cm^-3. The films obtained are polycryetalline with a hexagonal structure and a preferred orientation along the c-axis, All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33 eV for the films deposited at different RF powers.展开更多
A hydrogen permeation barrier was manufactured by the in situ reaction of zirconium hydride with oxygen. A reduction in the hydrogen permeation of the oxide films was detected by measuring the mass difference of the z...A hydrogen permeation barrier was manufactured by the in situ reaction of zirconium hydride with oxygen. A reduction in the hydrogen permeation of the oxide films was detected by measuring the mass difference of the zirconium hydride samples after the dehydrogenation experiment. The reaction of zirconium hydride with oxygen occurs only under the condition that the temperature is higher than 673 K in the oxygen partial pressure of 0.1 MPa. The oxide film is composed of two layers, a permeable oxide layer and a dense oxide layer, and the main phase of the oxide film is ZrO2 with baddeleyite structure. The XPS analysis shows that O-H bonds exist in the oxide film, which are helpful for resisting hydrogen diffusion through the oxide film.展开更多
Zr-Sn-Nb-Fe alloys are one of the important directions for continuous improvement of zirconium alloys for high burn-up fuel assemblies. The corrosion resistance of Zr-Sn-Nb-Fe alloys is closely related to the alloying...Zr-Sn-Nb-Fe alloys are one of the important directions for continuous improvement of zirconium alloys for high burn-up fuel assemblies. The corrosion resistance of Zr-Sn-Nb-Fe alloys is closely related to the alloying element and water chemical condition. To better understand the effect of Sn on corrosion resistance of Zr-Sn-Nb-Fe alloy, the normal N36 (Zr-1Sn-1Nb-0.3Fe) and low-tin N36 (Zr-0.8Sn-1Nb-0.3Fe) alloy sheets were prepared and tested in static autoclave in both of 0.01 mol/L LiOH and 0.03 mol/L LiOH aqueous solution at 360°C and 18.6 MPa. The characteristics of the microstructure and oxide film of alloys were analyzed by TEM and SEM respectively. It was shown that that the corrosion transition of the normal N36 appears earlier and the weight gain is higher than the low-tin N36 in two corrosive mediums. The cracks paralleling to the interface of oxide/metal are formed in the fracture surface of the oxide film and the micrographs at the oxide film/substrate interface appear uneven morphology. With the increasing of corrosion gain, there are more parallel cracks in oxide film and the uneven morphology at the oxide film/substrate interface is more obvious.展开更多
Ferroelectric thin films based on HfO_(2) have garnered increasing attention worldwide,primarily due to their remarkable compatibility with silicon and scalability,in contrast to traditional perovskite-structured ferr...Ferroelectric thin films based on HfO_(2) have garnered increasing attention worldwide,primarily due to their remarkable compatibility with silicon and scalability,in contrast to traditional perovskite-structured ferroelectric materials.Nonetheless,significant challenges remain in their widespread commercial utilization,particularly concerning their notable wake-up effect and limited endurance.To address these challenges,we propose a novel strategy involving the inhomogeneous distribution of Hf/Zr elements within thin films and explore its effects on the ferroelectricity and endurance of Hf_(0.5)Zr_(0.5)O_(2) thin films.Through techniques such as grazing incidence X-ray diffraction,transmission electron microscopy,and piezoresponse force microscopy,we investigated the structural characteristics and domain switching behaviors of these materials.The experimental results indicate that the inhomogeneous distribution of Hf/Zr contributes to improving the frequency stability and endurance while maintaining a large remnant polarization in Hf_(0.5)Zr_(0.5)O_(2) ferroelectric thin films.By adjusting the distribution of Zr/Hf within the Hf_(0.5)Zr_(0.5)O_(2) thin films,significant enhancements in the remnant polarization(2P_(r)>35μC/cm2)and endurance(>109)along with a reduced coercive voltage can be achieved.Additionally,the fabricated ferroelectric thin films also exhibit high dielectric tunability(≥26%)under a low operating voltage of 2.5 V,whether in the wake-up state or not.This study offers a promising approach to optimize both the ferroelectricity and endurance of HfO_(2)-based thin films.展开更多
To better understand the role of dissolved oxygen(DO) in affecting corrosion behavior of zirconium alloys,the Zr-0.85 Sn-0.16 Nb-0.37 Fe-0.18 Cr(wt.%) alloy was corroded in super-heated steam at 500℃ and 10.3 MPa und...To better understand the role of dissolved oxygen(DO) in affecting corrosion behavior of zirconium alloys,the Zr-0.85 Sn-0.16 Nb-0.37 Fe-0.18 Cr(wt.%) alloy was corroded in super-heated steam at 500℃ and 10.3 MPa under 1×10-6 DO and deaeration conditions.The microstructure of the alloy and oxide films was investigated by SEM,TEM,EDS and EBSD.Results show that the corrosion is aggravated under 1×10-6 DO.Compared with the deaeration condition,the oxide film is looser,and has more micro-cracks and more uneven inner surface under DO condition.For the oxide film forming under deaeration condition,the selected area diffraction(SAED) spots of planes(002)m,■ and(101)t are strong,while those of the(001)m and■ are weak.However,for the oxide film forming under DO condition,the SAED spots of planes(111)m,(200)m and(101)t are strong,while those of the(100)m and(110)m are weak.The higher DO content in super-heated steam accelerates the growth of oxide films,thus decreasing the corrosion resistance of zirconium alloys.展开更多
Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at ...Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electrical resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure is 2.5 Pa, it is obtained that the lowest resistivity is 2.03 x 10^-3Ω .cm with a very high transmittance of above 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.展开更多
A diffusive gradients in thin films (DGT) technique based on hydrous zirconium oxide (Zr-oxide) has been recently developed for the measurement of dissolved reactive phosphate (DRP). In this study, the detailed ...A diffusive gradients in thin films (DGT) technique based on hydrous zirconium oxide (Zr-oxide) has been recently developed for the measurement of dissolved reactive phosphate (DRP). In this study, the detailed performance of the DGT technique is reported. Spiking experiments revealed that several orthophosphate monoester compounds contributed to the Zr-oxide DGT measurements of DRP. However, such a phenomenon is unlikely to occur during field conditions due to the low concentration of organic P in typical natural waters. The presence of Cl- (up to 106 g/L), SO42- (up to 16 g/L), HCO3- (up to 817 g/L), and AsO2- and AsO 3 4 (both up to 1 mg As/L) in solutions had negligible effects on the measurement of DRP. The threshold concentrations of Cl-, SO42- and HCO3- have been increased from previous reports for the measurements of DRP using other adsorbent-based DGT techniques. The capacity for DGT measurements of DRP decreased with increasing solution pH (4.2-9.2). The lowest capacity (95 μg P/m2 at pH 9.2) was still greater than that of other DGT techniques that are usually used for the measurement of DRP (2-12 μg P/cm2 ). The Zr-oxide binding gel could be stored for up to 2 years without any aging effect. This period of validity was considerably longer than the ferrihydrite binding gel that is commonly used in present DGT devices (6 months). The field application revealed that the concentrations of DRP measured in three fresh water samples using the Zr-oxide DGT technique were in agreement with those of the traditional colorimetric method.展开更多
Nanosecond photoelectric effect is observed in a ZrO2 single crystal at ambient temperature for the first time. The rise time is 20ns and the full width at half maximum is about 30ns for the photovoltaic pulse when th...Nanosecond photoelectric effect is observed in a ZrO2 single crystal at ambient temperature for the first time. The rise time is 20ns and the full width at half maximum is about 30ns for the photovoltaic pulse when the wafer surface of the ZrO2 single crystal is irradiated by 248 nm KrF laser pulses. The experimental results show that ZrO2 single crystals may be a potential candidate in UV photodetectors.展开更多
Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) thin films with high transparency, low resistivity and good adhesion were successfully prepared on water-cooled flexible substrates (polyethylene glycol t...Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) thin films with high transparency, low resistivity and good adhesion were successfully prepared on water-cooled flexible substrates (polyethylene glycol terephthalate, PET) by RF magnetron sputtering. The structural, electrical and optical properties of the films were studied for different thicknesses in detail. X-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate. The lowest resistivity achieved is 1.55 × 10-3 Ω·cm for a thickness of 189 nm with a Hall mobility of 17.6 cm2/(V·s) and a carrier concentration of 2.15×1020 cm-3. All the films present a high transmittance of above 90% in the wavelength range of the visible spectrum.展开更多
基金Project supported by the National Key Basic Research and Development Programme of China (Grant No 2001CB610504) and the National Natural Science Foundation of China (Grant Nos 60576039 and 10374060).Acknowledgments We thank Dr Wang Zhuo and Dr Yang ChangHong for their assistance in the experiment.
文摘Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency (RF) msgnetron sputtering at room temperature, The RF power is varied from 75 to 150 W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power, The lowest resistivity achieved is 2.07 × 10^-3Ωcm at an RF power of 100W with a Hall mobility of 16cm^2V^-1s^-1 and a carrier concentration of 1.95 × 10^20 cm^-3. The films obtained are polycryetalline with a hexagonal structure and a preferred orientation along the c-axis, All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33 eV for the films deposited at different RF powers.
基金the National Natural Science Foundation of China (No. 50674015)
文摘A hydrogen permeation barrier was manufactured by the in situ reaction of zirconium hydride with oxygen. A reduction in the hydrogen permeation of the oxide films was detected by measuring the mass difference of the zirconium hydride samples after the dehydrogenation experiment. The reaction of zirconium hydride with oxygen occurs only under the condition that the temperature is higher than 673 K in the oxygen partial pressure of 0.1 MPa. The oxide film is composed of two layers, a permeable oxide layer and a dense oxide layer, and the main phase of the oxide film is ZrO2 with baddeleyite structure. The XPS analysis shows that O-H bonds exist in the oxide film, which are helpful for resisting hydrogen diffusion through the oxide film.
文摘Zr-Sn-Nb-Fe alloys are one of the important directions for continuous improvement of zirconium alloys for high burn-up fuel assemblies. The corrosion resistance of Zr-Sn-Nb-Fe alloys is closely related to the alloying element and water chemical condition. To better understand the effect of Sn on corrosion resistance of Zr-Sn-Nb-Fe alloy, the normal N36 (Zr-1Sn-1Nb-0.3Fe) and low-tin N36 (Zr-0.8Sn-1Nb-0.3Fe) alloy sheets were prepared and tested in static autoclave in both of 0.01 mol/L LiOH and 0.03 mol/L LiOH aqueous solution at 360°C and 18.6 MPa. The characteristics of the microstructure and oxide film of alloys were analyzed by TEM and SEM respectively. It was shown that that the corrosion transition of the normal N36 appears earlier and the weight gain is higher than the low-tin N36 in two corrosive mediums. The cracks paralleling to the interface of oxide/metal are formed in the fracture surface of the oxide film and the micrographs at the oxide film/substrate interface appear uneven morphology. With the increasing of corrosion gain, there are more parallel cracks in oxide film and the uneven morphology at the oxide film/substrate interface is more obvious.
基金supported by the National Natural Science Foundation of China(Nos.52122205,52302151,11932016,12302429,and 12202330)the Qin Chuang Yuan Cited High-level Innovation and Entrepreneurship Talent Project(No.QCYRCXM-2023-075)+2 种基金the Fundamental Research Funds for the Central Universities(No.ZYTS24122)the Xidian University Specially Funded Project for Interdisciplinary Exploration(No.TZJH2024054)the Start-up Foundation of Xidian University(No.10251220008).
文摘Ferroelectric thin films based on HfO_(2) have garnered increasing attention worldwide,primarily due to their remarkable compatibility with silicon and scalability,in contrast to traditional perovskite-structured ferroelectric materials.Nonetheless,significant challenges remain in their widespread commercial utilization,particularly concerning their notable wake-up effect and limited endurance.To address these challenges,we propose a novel strategy involving the inhomogeneous distribution of Hf/Zr elements within thin films and explore its effects on the ferroelectricity and endurance of Hf_(0.5)Zr_(0.5)O_(2) thin films.Through techniques such as grazing incidence X-ray diffraction,transmission electron microscopy,and piezoresponse force microscopy,we investigated the structural characteristics and domain switching behaviors of these materials.The experimental results indicate that the inhomogeneous distribution of Hf/Zr contributes to improving the frequency stability and endurance while maintaining a large remnant polarization in Hf_(0.5)Zr_(0.5)O_(2) ferroelectric thin films.By adjusting the distribution of Zr/Hf within the Hf_(0.5)Zr_(0.5)O_(2) thin films,significant enhancements in the remnant polarization(2P_(r)>35μC/cm2)and endurance(>109)along with a reduced coercive voltage can be achieved.Additionally,the fabricated ferroelectric thin films also exhibit high dielectric tunability(≥26%)under a low operating voltage of 2.5 V,whether in the wake-up state or not.This study offers a promising approach to optimize both the ferroelectricity and endurance of HfO_(2)-based thin films.
基金Projects(51871141,51471102)supported by the National Natural Science Foundation of China
文摘To better understand the role of dissolved oxygen(DO) in affecting corrosion behavior of zirconium alloys,the Zr-0.85 Sn-0.16 Nb-0.37 Fe-0.18 Cr(wt.%) alloy was corroded in super-heated steam at 500℃ and 10.3 MPa under 1×10-6 DO and deaeration conditions.The microstructure of the alloy and oxide films was investigated by SEM,TEM,EDS and EBSD.Results show that the corrosion is aggravated under 1×10-6 DO.Compared with the deaeration condition,the oxide film is looser,and has more micro-cracks and more uneven inner surface under DO condition.For the oxide film forming under deaeration condition,the selected area diffraction(SAED) spots of planes(002)m,■ and(101)t are strong,while those of the(001)m and■ are weak.However,for the oxide film forming under DO condition,the SAED spots of planes(111)m,(200)m and(101)t are strong,while those of the(100)m and(110)m are weak.The higher DO content in super-heated steam accelerates the growth of oxide films,thus decreasing the corrosion resistance of zirconium alloys.
文摘Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electrical resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure is 2.5 Pa, it is obtained that the lowest resistivity is 2.03 x 10^-3Ω .cm with a very high transmittance of above 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.
基金sponsored by the National Natural Scientific Foundation of China (No. 41001334, 41001325)the Project of Knowledge Innovation for the 3rd period, the Chinese Academy of Sciences (No. KZCX2-YW-JS304)the Natural Scientific Foundation of Jiangsu Province, China (No. BK2010606)
文摘A diffusive gradients in thin films (DGT) technique based on hydrous zirconium oxide (Zr-oxide) has been recently developed for the measurement of dissolved reactive phosphate (DRP). In this study, the detailed performance of the DGT technique is reported. Spiking experiments revealed that several orthophosphate monoester compounds contributed to the Zr-oxide DGT measurements of DRP. However, such a phenomenon is unlikely to occur during field conditions due to the low concentration of organic P in typical natural waters. The presence of Cl- (up to 106 g/L), SO42- (up to 16 g/L), HCO3- (up to 817 g/L), and AsO2- and AsO 3 4 (both up to 1 mg As/L) in solutions had negligible effects on the measurement of DRP. The threshold concentrations of Cl-, SO42- and HCO3- have been increased from previous reports for the measurements of DRP using other adsorbent-based DGT techniques. The capacity for DGT measurements of DRP decreased with increasing solution pH (4.2-9.2). The lowest capacity (95 μg P/m2 at pH 9.2) was still greater than that of other DGT techniques that are usually used for the measurement of DRP (2-12 μg P/cm2 ). The Zr-oxide binding gel could be stored for up to 2 years without any aging effect. This period of validity was considerably longer than the ferrihydrite binding gel that is commonly used in present DGT devices (6 months). The field application revealed that the concentrations of DRP measured in three fresh water samples using the Zr-oxide DGT technique were in agreement with those of the traditional colorimetric method.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10334070 and 50672132, and the National Key Basic Research Programme of China under Grant No 2004CB619004.
文摘Nanosecond photoelectric effect is observed in a ZrO2 single crystal at ambient temperature for the first time. The rise time is 20ns and the full width at half maximum is about 30ns for the photovoltaic pulse when the wafer surface of the ZrO2 single crystal is irradiated by 248 nm KrF laser pulses. The experimental results show that ZrO2 single crystals may be a potential candidate in UV photodetectors.
文摘Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) thin films with high transparency, low resistivity and good adhesion were successfully prepared on water-cooled flexible substrates (polyethylene glycol terephthalate, PET) by RF magnetron sputtering. The structural, electrical and optical properties of the films were studied for different thicknesses in detail. X-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate. The lowest resistivity achieved is 1.55 × 10-3 Ω·cm for a thickness of 189 nm with a Hall mobility of 17.6 cm2/(V·s) and a carrier concentration of 2.15×1020 cm-3. All the films present a high transmittance of above 90% in the wavelength range of the visible spectrum.