Silicon carbide（SiC）-alumina（Al_2O_3）-mullite（Al_6Si_2O_（13）） composite powder was successfully synthesized at 1 550 ℃ for 5 h via carbothermal reduction reaction,and the effects of various mass ratios of act...Silicon carbide（SiC）-alumina（Al_2O_3）-mullite（Al_6Si_2O_（13）） composite powder was successfully synthesized at 1 550 ℃ for 5 h via carbothermal reduction reaction,and the effects of various mass ratios of active carbon to fly ash（0.38,0.44 and 0.58） on the phase composition and microstructure of products were investigated,and the formation process of the powder was also analyzed in detail.The products mainly consist ofβ-SiC,α-Al_2O_3,Al_6Si_2O_（13） and FeSi.Increasing carbon content favors the decomposition of Al_6Si_2O_（13） and formation of SiC.The average particle size of β-SiC andα-Al_2O_3 is about 1 μm and that of Al_6Si_2O_（13） is 5-10μm.The formation process of SiC-Al_2O_3-Al_6Si_2O_（13）powder includes the decomposition of mullite in fly ash and formation of SiC.展开更多
基金financially supported by the Open Research Fund for the Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education of Wuhan University of Science and Technology(Grant No.FMRU201401)the Fundamental Research Funds for the Central Universities(Grant No.N150204021).
文摘Silicon carbide（SiC）-alumina（Al_2O_3）-mullite（Al_6Si_2O_（13）） composite powder was successfully synthesized at 1 550 ℃ for 5 h via carbothermal reduction reaction,and the effects of various mass ratios of active carbon to fly ash（0.38,0.44 and 0.58） on the phase composition and microstructure of products were investigated,and the formation process of the powder was also analyzed in detail.The products mainly consist ofβ-SiC,α-Al_2O_3,Al_6Si_2O_（13） and FeSi.Increasing carbon content favors the decomposition of Al_6Si_2O_（13） and formation of SiC.The average particle size of β-SiC andα-Al_2O_3 is about 1 μm and that of Al_6Si_2O_（13） is 5-10μm.The formation process of SiC-Al_2O_3-Al_6Si_2O_（13）powder includes the decomposition of mullite in fly ash and formation of SiC.
